Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make i...Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.展开更多
Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, a...Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.展开更多
The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal ph...The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.展开更多
Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 ...Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.展开更多
In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substra...In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.展开更多
Nb/Ta multilayer films deposited on Ti6A14V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam （HCPEB） to prepare Nb-Ta alloyed layers. ...Nb/Ta multilayer films deposited on Ti6A14V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam （HCPEB） to prepare Nb-Ta alloyed layers. The mi- crostructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope （TEM） equipped with an X-ray energy dispersive spectrometer （EDS） attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was- 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface laver.展开更多
The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are inv...The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction（XRD） measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has（200） preferential orientation, but this orientation changes to（211） direction with Pr and Ta doping ratio increasing. Atomic force microscopy（AFM） and scanning electron microscopy（SEM） analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible（UV-Vis） spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.展开更多
利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好...利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好的抗凝血特性以及禁带宽度为 3.2eV的半导体特性。此外 ,探讨了Ti Ta O涂层的抗凝血机理 ,并提出材料的半导体特性是影响Ti Ta O涂层抗凝血特性的主要原因之一。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700)the National Natural Science Foundation of China(Grant No.12174347)+1 种基金the Synergetic Extreme Condition User Facility(SECUF)the Center for Materials Genome。
文摘Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61107080 and 50921002)the Natural Science Foundation of Jiangsu Province,China (Grant No. BK2011223)+2 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (New Teachers) (Grant No.20110095120018)the China Postdoctoral Science Foundation (Grant No. 20110491472)the Fundamental Research Funds for the Central Universities,China (Grant No. 2012QNA03)
文摘Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076055)the Program for Innovative Research Teams in Zhejiang Normal Universitythe Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (Grant No. FDS KL2011_04)
文摘The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.
文摘Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.
基金Supported by the National Natural Science Foundation of China(No.2 0 1710 15 )
文摘In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.
基金Project supported by the National Basic Research Program of China (Grant No. 2013CB632305)the Guangdong Province University-Industry Cooperation Project of the Ministry of Education, China (Grant No. 2010B090400444)+1 种基金the Guangdong International Cooperation Projects, China (Grant No. 2010B050900003)the Guangdong Science and Technology Plan Projects, China (Grant No. 2010A070500002)
文摘Nb/Ta multilayer films deposited on Ti6A14V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam （HCPEB） to prepare Nb-Ta alloyed layers. The mi- crostructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope （TEM） equipped with an X-ray energy dispersive spectrometer （EDS） attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was- 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface laver.
文摘The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction（XRD） measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has（200） preferential orientation, but this orientation changes to（211） direction with Pr and Ta doping ratio increasing. Atomic force microscopy（AFM） and scanning electron microscopy（SEM） analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible（UV-Vis） spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.
文摘利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好的抗凝血特性以及禁带宽度为 3.2eV的半导体特性。此外 ,探讨了Ti Ta O涂层的抗凝血机理 ,并提出材料的半导体特性是影响Ti Ta O涂层抗凝血特性的主要原因之一。
