Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Density changes with substrate negative bias for ta-C films deposited by filter cathode vacuum arc

Specular X-ray reflectivity (XRR) measurements were used to study the density and cross-section information of tetrahedral amorphous carbon (ta-C) films deposited by filter cathode vacuum arc(FCVA) system at different substrate bias. According to the correlation between density and substrate negative bias, it is found that the value of density reaches a maximum at -80 V bias. As the substrate bias increases or decreases, the density tends to lower gradually. Based on the density of diamond and graphite, sp3 bonding ratio of ta-C films was obtained from their corresponding density according to a simple equation between the two. And a similar parabolic variation was observed for ta-C films with the sp3 content changes with substrate negative bias. The mechanical properties such as hardness and elastic modulus were also measured and compared with the corresponding density for ta-C films. From the distribution of data points, a linear proportional correlation between them was found, which shows that the density is a critical parameter to characterize the structure variation for ta-C films.

氮含量对Ti-B-C-N薄膜微观结构和性能的影响

采用反应磁控溅射法在高速钢基体上制备氮原子分数分别为10.8%,15.6%,28.1%,36.4%的Ti-B-C-N薄膜,研究了氮含量对薄膜微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti-B-C-N薄膜均由α-Fe和Ti(C,N)纳米晶组成,具有Ti(C,N)纳米晶镶嵌在非晶基体相中的纳米复合结构;随着氮含量增加,非晶相含量增加,Ti(C,N)纳米晶的含量和晶粒尺寸减小;随着氮含量增加,Ti-B-C-N薄膜的显微硬度增大,摩擦因数和磨损率均减小,表面磨痕变浅,磨损机制由剥落和微观犁削转变为微观抛光。

n-nc-Si:H低温制备工艺及其在柔性钙钛矿太阳电池中的应用

【目的】为在低温工艺下制备出适用于柔性钙钛矿太阳电池的高性能电子传输层,需要对电子传输层材料及制备条件进行研究。【方法】将n型氢化纳米晶硅薄膜作为柔性钙钛矿太阳电池电子传输层,研究衬底温度对薄膜性能的影响,并优化电子传输层与钙钛矿层界面处理工艺和结构。【结果】得到暗电导率、光透过率、表面形貌适用于柔性钙钛矿太阳电池电子传输层的n型氢化纳米晶硅薄膜低温制备条件,经过界面优化处理的柔性钙钛矿太阳电池转换效率达到14.66%。【结论】在低温工艺下制备出了高性能的电子传输层及柔性钙钛矿太阳电池,对进一步开展叠层钙钛矿太阳电池的研究具有指导意义。

Magnetic properties and structure of (001)-oriented [CoPt/C]_n /Ag nanocomposite films on the glass substrates

The highly （1301） oriented triple system of [CoPt/C]n/Ag films was deposited on glass substrates by DC and RF magnetron sputtering. After annealing at 600℃ for 30 min, thin films become magnetically hard with coercivities in the range of 160-875 kA/m because of high anisotropy associated with the L10 ordered phase. C doping plays an important role in improving （001） texture and reducing the intergrain interactions. The oriented growth of CoPt films was influenced strongly by the number of repetitions （n） of CoPt/C. By controlling the C content and the number of repetitions （n） of CoPt/C, nearly perfect （001） orientation can be obtained in the [CoPt3nm/C3nm]5/Ag50 nm.

N掺杂对Si-DLC薄膜的结构性能影响及摩擦机理研究

采用平板阴极等离子体增强化学气相沉积技术,通过调控N_(2)流量在GCr15基底上制备了系列硅氮共掺杂类金刚石碳基(Si/N-DLC)薄膜,分析探索N掺杂对于Si-DLC薄膜结构、力学性能和摩擦学行为的作用规律以及Si/NDLC薄膜的低摩擦磨损机理.结果表明:N元素的引入促进Si-DLC薄膜中sp^(2)-C结构的形成,降低了薄膜的硬度和弹性模量,但能大幅改善Si-DLC薄膜的韧性并增强结合(>20 N).更重要的是,N掺杂可有效降低Si-DLC薄膜的摩擦系数并改善其耐磨性能,摩擦系数和磨损率相较于Si-DLC薄膜分别降低了约26%和45%.其摩擦机理是类石墨碳(GLC)转移膜的形成使得摩擦界面发生转移,有效降低了Si/N-DLC薄膜的摩擦系数,并且依赖于摩擦界面的石墨化程度和氢含量.而磨损行为取决于其薄膜自身韧性和抵抗弹塑性变形的能力,磨痕内部脆性断裂缺口会造成转移膜的大面积破坏,加剧了黏着磨损.此外,确定了Si/N-DLC薄膜低摩擦(摩擦系数≤0.05)的最佳服役区间,相关结果为Si/N-DLC薄膜的结构性能调控和工程应用提供参考.

The low temperature growth of stable p-type ZnO films in HiPIMS

In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.

EFFECTS OF TREATMENT TEMPERATURE ON THE MICROSTRUCTURE AND MAGNETIC PROPERTIES OF Fe-N THIN FILMS

Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with the increase of the substrate temperature （Ts） and the annealing temperature （Ta）. It is more difficult for nitrogen atoms to enter the Fe lattice under higher Ts above 150℃. The phase evolution is visible at higher Ta above 200℃. The phase transformation of α＇＇-Fe16N2 occurred at 400℃. The change of crystal size with Ta was clearly visible from bright and dark field images. The clear high-resolution electron microscope （HREM） images of 110α, 111γ＇, 112α＇＇, and 200α＇＇ phases were observed. The interplanar distances from TEM （transmission electron microscope） and HREM match the calculated values very well. From the results of the vibrating sample magnetometer （VSM）, the good magnetic properties of Fe-N films were obtained at 150℃ of Ts and 200℃ of Ta, respectively.

Ti-Si-N films prepared by magnetron sputtering

A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double-target magnetron sputtering system in an Ar-N 2 gas mixture. The Ti-Si-N films were investigated by characterization techniques such as X-ray diffraction (XRD), atomic force microscope (AFM), electron probe microanalyzer (EPMA), scratch test and nanoindentation. The as-deposited films have a good adhesion to Al substrate and appear with smooth and lustrous surface. The films show nanocomposite structure with nano TiN grains embedded in an amorphous SiN x matrix. The maximum hardness of the films was achieved as high as 27 GPa. The influences of the N 2 flow rate and substrate temperature on the growth rate and quality of the films were also discussed. For all samples, the Ar flow rate was maintained constant at 10 ml min 1 , while the flow rate of N 2 was varied to analyze the structural changes related to chemical composition and friction coefficient. The low temperature in the deposited Ti-Si-N films favors the formation of crystalline TiN, and it leads to a lower hardness at low N 2 flow rate. At the same time, the thin films deposited are all crystallized well and bonded firmly to Al substrate, with smooth and lustrous appearance and high hardness provided. The results indicate that magnetron sputtering is a promising method to deposit hard films onto soft substrate.

Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates

Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.

Experimental Observation of Cubic C_3N_4 Compound in Carbon Nitride Thin Films

Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds

The effects of radiation damage on power VDMOS devices with composite SiO_2-Si_3N_4 films

Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Preparation and characterization of thick cubic boron nitride films

Cubic boron nitride （c-BN） films are prepared by the radio frequency magnetron sputtering technique. The stresses and crystallinities of the films are estimated by the Fourier transform infrared spectroscopy of c-BN samples, including the peak shifts and varieties of full widths at half maximum. The effects of the B-C-N interlayer and the two-stage deposition method on the c-BN films are investigated. Then the thick and stable c-BN films are prepared by a combination of the two methods. The properties of the interlayer and film are also characterized.

PREPARATION OF PHOTOFUNCTIONAL POLYMER THIN FILMS BY LANGMUIR-BLODGETT TECHNIQUE

Polymer LB films containing photofuntional groups were prepared by the copolymerization of N-dodecylacrylamide (DDA), which has an excellent property to form a stable monolayer and LB multilayerswith photofunctional monomers. Tris(2, 2'-bipyridine) ruthenium complex, Ru(bpy)_3^(2+), one of the most well-known redox-active sensitizer, was incorporated into the DDA copolymer. The photogalvanic effect based onthe photoinduced electron transfer using the ruthenium complex in the polymer LB monolayer was discussed.

Influences of nitrogen flow rate on the structures and properties of Ti and N co-doped diamond-like carbon films deposited by arc ion plating

In this paper, Ti-C-N nanocomposite films are deposited under different nitrogen flow rates by pulsed bias arc ion plating using Ti and graphite targets in the Ar/N2 mixture gas. The surface morphologies, compositions, microstructures, and mechanical properties of the Ti-C-N films are investigated systematically by field emission scanning electron mi- croscopy （FE-SEM）, x-ray photoelectron spectroscopy （XPS）, grazing incident x-ray diffraction （GIXRD）, Raman spectra, and nano-indentation. The results show that the nanocrystalline Ti（C,N） phase precipitates in the film from GIXRD and XPS analysis, and Raman spectra prove the presence of diamond-like carbon, indicating the formation of nanocomposite film with microstructures comprising nanocrystalline Ti（C,N） phase embedded into a diamond-like matrix. The nitrogen flow rate has a significant effect on the composition, structure, and properties of the film. The nano-hardness and elastic modulus first increase and then decrease as nitrogen flow rate increases, reaching a maximum of 34.3 GPa and 383.2 GPa, at a nitrogen flow rate of 90 sccm, respectively.

Effect of Ag Addition on the Microstructure and Magnetic Properties of FePt Thin Films

FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.

Proposal and Achievement of a Relatively Al-rich Interlayer for In-rich Al_x In_(1-x)N Films Deposition

Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffraction （XRD） patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard＇s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1-x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy （XPS） depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E2u and InN-like Al （LO） phonon model accompanying with slight A1N-like A1 （LO） phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019 cm-3. The strain in In-rich AlxIn1-x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.

Advanced Treatment of Wastewater Treatment Plant Effluent by Using Biofilms on Filamentous Bamboo

[ Objective ] The study aimed at treating wastewater treatment plant （WWTP） effluent by using bio-film reactor with filamentous bamboo as bio-carrier. [ Method] With the aid of a continuous flow reactor, a bio-film reactor using filamentous bamboo as bio-carrier was used to treat WWTP effluent with low C/N ratio, and the removal effects of CODc,, TN （total nitrogen）, and NO3--N in the wastewater were analyzed.[ Result ] The average removal rates of CODcr, TN, and NO3- -N reached 47.7%, 23.6% and 34.5% when the C/N ratio of influent was around 2. In addi- tion, a stable bio-film was formed very well in the secondary effluent with low C/N ratio and hardly degradable organic pollutants. The pollutants could be removed effectively because of the excellent surface characteristics and compositions of filamentous bamboo. [ Conclusion] The research provides a new method to treat WWTP effluent with low C/N ratio.

P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films

P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.