The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal ph...The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.展开更多
Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, a...Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.展开更多
Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 ...Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.展开更多
Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and op...Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076055)the Program for Innovative Research Teams in Zhejiang Normal Universitythe Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (Grant No. FDS KL2011_04)
文摘The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61107080 and 50921002)the Natural Science Foundation of Jiangsu Province,China (Grant No. BK2011223)+2 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (New Teachers) (Grant No.20110095120018)the China Postdoctoral Science Foundation (Grant No. 20110491472)the Fundamental Research Funds for the Central Universities,China (Grant No. 2012QNA03)
文摘Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures, annealing temperatures, and annealing times. The effects of temperature on the optical properties, chemical composition, structure, and laser- induced damage threshold （LIDT） are systematically investigated. The results show that the increase of deposition temperature decreases the film transmittance slightly, yet annealing below 923 K is beneficial for the transmittance. The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K. While an interesting near-crystalline phase is found when annealed at 923 K. The LIDT increases with the deposition temperature increasing, whereas it increases firstly and then decreases as the annealing temperature increases. In addition, the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT, which is mainly due to the improvement of the O/Ta ratio. The highest LIDT film is obtained when annealed at 923 K, owing to the lowest density of defect.
文摘Amorphous Ta_2O_5 films were prepared on Si (100) substrates by thermal oxidization.The film consisted of amorphous Ta_2O_5 nanostructure that grew vertically and compactly at a large range.It was found that Ta_2O_5 films became crystalline when annealed at or above 650℃and remained amorphous below 650℃.The effects of annealing on the optical properties of Ta_2O_5 film were also discussed.It is estimated that the refraction indexes and the optical energy gaps of both amorphous Ta_2O_5 film and crystal one are stable.The optical energy gap of as-deposited Ta_2O_5 film is about 4.81 eV.The above results indicate that Ta_2O_5 films have a promising application in the optical devices.
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.
