Temperature-dependent photoluminescence of lead-free cesium tin halide perovskite microplates

Tin halide perovskites recently have attracted extensive research attention due to their similar electronic and band structures but non-toxicity compared with their lead analogues. In this work, we prepare high-quality CsSnX_(3)(X=Br,I) microplates with lateral sizes of around 1–4 μm by chemical vapor deposition and investigate their low-temperature photoluminescence(PL) properties. A remarkable splitting of PL peaks of the CsSnBr_(3)microplate is observed at low temperatures. Besides the possible structural phase transition at below 70 K, the multi-peak fittings using Gauss functions and the power-dependent saturation phenomenon suggest that the PL could also be influenced by the conversion from the emission of bound excitons into free excitons. With the increase of temperature, the peak position shows a blueshift tendency for CsSnI_(3), which is governed by thermal expansion. However, the peak position of the CsSnBr3microplate exhibits a transition from redshift to blueshift at ~160 K. The full width at half maximum of CsSnX_(3)broadens with increasing temperature, and the fitting results imply that longitudinal optical phonons dominate the electron–phonon coupling and the coupling strength is much more robust in CsSnBr3than in CsSnI_(3). The PL intensity of CsSnX_(3)microplates is suppressed due to the enhanced non-radiative relaxation and exciton dissociation competing with radiative recombination. According to the Arrhenius law, the exciton binding energy of CsSnBr_(3)is ~38.4 meV, slightly smaller than that of CsSnI_(3).

Temperature-dependent photoluminescence on organic inorganic metal halide perovskite CH_3NH_3Pb I_(3-)Cl_ prepared on ZnO/FTO substrates using a two-step method

Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.

Temperature-dependent photoluminescence of highly luminescent water-soluble CdTe quantum dots

Highly luminescent water-soluble CdTe quantum dots （QDs） have been synthesized with an electrogenerated precursor. The obtained CdTe QDs can possess good crystallizability, high quantum yield （QY） and favorable stability. Furthermore, a detection system is designed firstly for the investigation of the temperature-dependent PL of the QDs. ？2009 Yu Zhang. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

A GaN/Si nanoheterostructure is prepared by growing wurtzite GaN on a silicon nanoporous pillar array （Si-NPA） with a chemical vapor deposition method. The temperature evolution of the photoluminescence （PL） of GaN/Si- NPA is measured and the PL mechanism is analyzed. It is found that the PL spectrum is basically composed of two narrow ultraviolet peaks and a broad blue peak, corresponding to the near band-edge emission of GaN and its phonon replicas, and the emission from Si-NPA. No GaN defect-related PL is observed in the as-prepared GaN/Si-NPA. Our experiments prove that Si-NPA might be an ideal substrate for preparing high-quality Si-based GaN nanomaterials or nanodeviees.

Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n＋-p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells

The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.

Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.

Temperature-dependent photoluminescence of size-tunable ZnAgInSe quaternary quantum dots

Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy（？E） of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si(111) substrate

In this paper, the temperature-dependent photoluminescence（PL） properties of Ga N grown on Si（111） substrate are studied. The main emission peaks of Ga N films grown on Si（111） are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FX A and D0 X peaks, of Ga N films grown on Si（111） substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the Ga N films grown on sapphire are under the action of compressive stress, while those grown on Si（111） substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in Ga N films grown on Si（111） and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well（QW） emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.

Hybrid perovskite shows temperature-dependent photoluminescence and dielectric response triggered by halogen substitution

Materials exhibiting dielectric switching response and photoluminescence(PL)are promising for sensors and information storage.In previous research,we synthesized a series of materials with red or green PL and dielectric switching capabilities by incorporating luminescent metal halides into organic ammonium compounds.However,effective modification to synthesize organic-inorganic hybrid materials with dielectric switching response and orange PL continues to be a challenge in the respective fields.Orange PL materials are valuable for switching and sensors,and most orange light sources are derived from rare earth elements,making them harder to obtain.We have successfully synthesized two organic-inorganic hybrid materials([CMPD]PbBr_(3)(1)and[BMPD]PbBr_(3)(2),CMPD=N-ClCH_(2)-N-methylpiperidine,BMPD=N-BrCH_(2)-N-methylpiperidine)that exhibit both orange PL and dielectric switching response.When Cl in compound 1 is substituted by Br in compound 2,the phase transition temperature of the compound is elevated by 45 K.These compounds exhibit captivating orange light emission when exposed to ultraviolet lamps.This research provides insights into exploring multifunctional materials with orange PL and dielectric switching response and provides proof for halogen substitution strategies to design materials with higher phase transition temperatures.

Overexpression of Kdm6b induces testicular differentiation in a temperature-dependent sex determination system

In reptiles,such as the red-eared slider turtle(Trachemys scripta elegans),gonadal sex determination is highly dependent on the environmental temperature during embryonic stages.This complex process,which leads to differentiation into either testes or ovaries,is governed by the finely tuned expression of upstream genes,notably the testis-promoting gene Dmrt1 and the ovary-promoting gene Foxl2.Recent studies have identified epigenetic regulation as a crucial factor in testis development,with the H3K27me3 demethylase KDM6B being essential for Dmrt1 expression in T.s.elegans.However,whether KDM6B alone can induce testicular differentiation remains unclear.In this study,we found that overexpression of Kdm6b in T.s.elegans embryos induced the male development pathway,accompanied by a rapid increase in the gonadal expression of Dmrt1 at 31°C,a temperature typically resulting in female development.Notably,this sex reversal could be entirely rescued by Dmrt1 knockdown.These findings demonstrate that Kdm6b is sufficient for commitment to the male pathway,underscoring its role as a critical epigenetic regulator in the sex determination of the red-eared slider turtle.

Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO_(2) nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances

Nanocomposite films consisting of carboxymethyl cellulose,polyethylene oxide(CMC/PEO),and anatase titanium diox-ide(TO)were produced by the use of sol-gel and solution casting techniques.TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers,as shown by X-ray diffraction(XRD)and attenuated total reflectance fourier transform infrared(ATR-FTIR)analysis.The roughness growth is at high levels of TO nanocrystals(TO NCs),which means increasing active sites and defects in CMC/PEO.In differential scanning calorimetry(DSC)thermograms,the change in glass transition temperature(Tg)val-ues verifies that the polymer blend interacts with TO NCs.The increment proportions of TO NCs have a notable impact on the dielectric performances of the nanocomposites,as observed.The electrical properties of the CMC/PEO/TO nanocomposite undergo significant changes.The nanocomposite films exhibit a red alteration in the absorption edge as the concentration of TO NCs increases in the polymer blend.The decline in the energy gap is readily apparent as the weight percentage of TO NCs increases.The photoluminescence(PL)emission spectra indicate that the sites of the luminescence peak maximums show slight variation;peaks get wider,while their intensities decrease dramatically as the concentration of TO increases.These nanocomposite materials show potential for multifunctional applications including optoelectronics,antireflection coatings,pho-tocatalysis,light emitting diodes,and solid polymer electrolytes.

Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys

InA1N has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our ln0.153Al0.847N sample.

Ostensibly perpetual optical data storage in glass with ultra-high stability and tailored photoluminescence

Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)years is attained with single ultrafast laser pulse induced reduction of Eu^(3+)ions and tailoring of optical properties inside the Eu-doped aluminosilicate glasses.We demonstrate that the induced local modifications in the glass can stand against the temperature of up to 970 K and strong ultraviolet light irradiation with the power density of 100 kW/cm^(2).Furthermore,the active ions of Eu^(2+)exhibit strong and broadband emission with the full width at half maximum reaching 190 nm,and the photoluminescence(PL)is flexibly tunable in the whole visible region by regulating the alkaline earth metal ions in the glasses.The developed technology and materials will be of great significance in photonic applications such as long-term ODS.

Photoluminescence Enhancement of Aluminum Ion Intercalated MoS_(2)Quantum Dots

Low photolumines-cence(PL)quantum yield of molybdenum disulfide(MoS_(2))quan-tum dots(QDs)has lim-ited practical applica-tion as potential fluores-cent materials.Here,we report the intercalation of aluminum ion(Al^(3+))to enhance the PL of MoS_(2)QDs and the un-derlying mechanism.With detailed characterization and exciton dynamics study,we suggest that additional surface states including new emission centers have been effectively introduced to MoS_(2)QDs by the Al^(3+)intercalation.The synergy of new radiative pathway for exciton re-combination and the passivation of non-radiative surface traps is responsible for the en-hanced fluorescence of MoS_(2)QDs.Our findings demonstrate an efficient strategy to improve the optical properties of MoS_(2)QDs and are important for understanding the regulation effect of surface states on the emission of two dimensional sulfide QDs.

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Type-Ⅱband alignment can realize the efficient charge transfer and separation at the semiconductor heterointerface,which results in photoluminescence(PL)quenching.Recently,several researches demonstrated great enhancement of localized PL at the interface of type-Ⅱtwo-dimensional(2D)heterostructure.However,the dominant physical mechanism of this enhanced PL emission has not been well understood.In this work,we symmetrically study the exciton dynamics of type-Ⅱlateral heterostructures of monolayer MoS_(2) and WS_(2) at room temperatures.The strong PL enhancement along the one-dimensional(1D)heterointerface is associated with the trion emission of the WS_(2) shell,while a dramatic PL quenching of neutral exciton is observed on the MoS_(2) core.The enhanced quantum yield of WS2trion emission can be explained by charge-transfer-enhanced photoexcited carrier dynamics,which is facilitated by resonance hole transfer from MoS_(2) side to WS_(2) side.This work sheds light on the 1D exciton photophysics in lateral heterostructures,which has the potential to lead to new concepts and applications of optoelectronic device.

Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors

Recently, lanthanide-ion-doped luminescent materials have been extensively used as optical thermometry probes due to their fast responses, non-contact, and high sensitivity properties. Based on different responses of two emissions to temperature, the fluorescence intensity ratio(FIR) technique can be used to estimate the sensitivities for assessing the optical thermometry performances. In this study, we introduce different doping concentrations of Eu^(3+) ions into negative thermal expansion material Sc2W3O12to increase the thermal-enhanced luminescence from 373 K to 548 K, and investigate the temperature sensing properties in detail. All samples can exhibit their good luminescence behaviors thermally enhanced.The emission intensity of Sc2W3O12:6-mol% Eu3+phosphor reaches 147.8% of initial intensity at 473 K. As the Eu3+doping concentration increases, the resistance of the sample to thermal quenching decreases. The FIR technique based on each of the transitions 5D→7F_(1)(592 nm) and 5D→7F_(2)(613 nm) of Eu3+ions demonstrates a maximum relative temperature sensitivity of 3.063% K-1at 298 K for Sc_(2)W_(3)O_(12):6-mol% Eu3+phosphor. The sensitivity of sample decreases with the increase of Eu3+concentration. Benefiting from the thermal-enhanced luminescence performance and good temperature sensing properties, the Sc_(2)W_(3)O_(12):Eu^(3+)phosphors can be used as optical thermometers.

Low-Temperature Growth and Photoluminescence of SnO_2 Nanowires

SnO2 nanowires with a diameter of 25nm are synthesized at 550~C by Au-Ag catalyst assisted thermal evapora- tion of SnO powders. The room-temperature photoluminescence spectra （PL） of the prepared nanowires are measured. Among the four PL peaks,the peak of 418nm is newly observed. This peak is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. We suggest that the chemical reactions of the low temperature and low concen- tration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.

Origin of Photoluminescence of Neodymium-Implanted Silicon

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.