Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO_(2) nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances

Nanocomposite films consisting of carboxymethyl cellulose,polyethylene oxide(CMC/PEO),and anatase titanium diox-ide(TO)were produced by the use of sol-gel and solution casting techniques.TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers,as shown by X-ray diffraction(XRD)and attenuated total reflectance fourier transform infrared(ATR-FTIR)analysis.The roughness growth is at high levels of TO nanocrystals(TO NCs),which means increasing active sites and defects in CMC/PEO.In differential scanning calorimetry(DSC)thermograms,the change in glass transition temperature(Tg)val-ues verifies that the polymer blend interacts with TO NCs.The increment proportions of TO NCs have a notable impact on the dielectric performances of the nanocomposites,as observed.The electrical properties of the CMC/PEO/TO nanocomposite undergo significant changes.The nanocomposite films exhibit a red alteration in the absorption edge as the concentration of TO NCs increases in the polymer blend.The decline in the energy gap is readily apparent as the weight percentage of TO NCs increases.The photoluminescence(PL)emission spectra indicate that the sites of the luminescence peak maximums show slight variation;peaks get wider,while their intensities decrease dramatically as the concentration of TO increases.These nanocomposite materials show potential for multifunctional applications including optoelectronics,antireflection coatings,pho-tocatalysis,light emitting diodes,and solid polymer electrolytes.

Transition metal coordination polymers with flexible dicarboxylate ligand:Synthesis,characterization,and photoluminescence property

Under solvothermal conditions,six new coordination polymers(CPs)[Mn(L)(phen)(H_(2)O)]_(n)(1),[Co(L)(phen)(H_(2)O)]_(n)(2),[Cu(L)(phen)(H_(2)O)]_(n)(3),[Zn_(2)(L)_(2)(phen)2(H_(2)O)]_(n)(4),[Zn(L)(phen)]_(n)(5),and[Cd(L)(phen)2]_(n)(6)were synthesized by reactions of dicarboxylate ligand 2,2'-(1,2-phenylenebis(methylene))bis(sulfanediyl)dinobutyric acid(H_(2)L)and 1,10-phenanthroline(phen)with the corresponding metal salts.Complexes 1-6 have been structurally characterized by single-crystal X-ray diffraction analyses,elemental analysis,IR,thermogravimetric analysis,and powder X-ray diffraction.The structures of 1-6 are 1D chains,which are further connected by hydrogen bonding interac-tions to form 3D supramolecular structures.Among them,1 and 2 are isomorphic with L2-of syn-conformation,while L2-shows anti-conformation in 3-6.In addition,the solid-state photoluminescence property of 4-6 was investigated.

CO_(2)-Induced Modulation of Si-O Bonds for Low Temperature Plastic Deformation of Amorphous Silica Nanoparticles with Enhanced Photoluminescence

Modulation of Si-O bonds under mild conditions has been a challenging issue in the field of material science,which is critical to manufacture highperformance silica-based optical and photonic devices.Herein,we introduce a nondestructive technique to achieve Si-O bond rearrangement,leading to plastic deformation and photoluminescence enhancement of amorphous silica nanoparticles using supercritical carbon dioxides in EtOH/H_(2)O solution under mild temperature.Specifically,plastic deformation is achieved by treating hollow mesoporous silica nanospheres using supercritical CO_(2)at 40°C under 20 MPa.Experimental and theoretical studies revealed the critical role of supercritical CO_(2)in the plastic deformation process,which can be intercalated into the hollow mesoporous silica nanospheres with anisotropic stresses and induces the rearrangement of Si-O bonds and transformation of ring structures.This work suggests a novel approach to engineer high-performance nano-silica glass components for numerous optical and photonic devices under mild condition.

Low-Temperature Growth and Photoluminescence of SnO_2 Nanowires

SnO2 nanowires with a diameter of 25nm are synthesized at 550~C by Au-Ag catalyst assisted thermal evapora- tion of SnO powders. The room-temperature photoluminescence spectra （PL） of the prepared nanowires are measured. Among the four PL peaks,the peak of 418nm is newly observed. This peak is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. We suggest that the chemical reactions of the low temperature and low concen- tration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.

Origin of Photoluminescence of Neodymium-Implanted Silicon

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.

Morphology, photoluminescence and gas sensing of Ce-doped ZnO microspheres

Ce-doped ZnO microspheres were solvothermally prepared, and their microstructure, morphology, photoluminescence, and gas sensing were investigated by X-ray diffractometer, field emission scanning electron microscopy, transmission electron microscopy, fluorescence spectrometer and gas sensing analysis system. The results showed that the Ce-doped ZnO microspheres were composed of numerous nanorods with a diameter of 70 nm and a wurtzite structure. Ce-doping could cause a morphological transition from loose nanorods assembly to a tightly assembly in the microspheres. Compared with pure ZnO, the photoluminescence of the Ce-doped microspheres showed red-shifted UV emission and an enhanced blue emission. Particularly, the Ce-doped ZnO sensors exhibited much higher sensitivity and selectivity to ethanol than that of pure ZnO sensor at 320 °C. The ZnO microspheres doped with 6% Ce (mole fraction) exhibited the highest sensitivity (about 30) with rapid response (2 s) and recovery time (16 s) to 50×10?6 ethanol gas.

Synthesis and photoluminescence properties of single-crystal ZnO hexagonal pyramids by PEG400-assisted thermal decomposition route

Large-scale synthesis of ZnO hexagonal pyramids was achieved by a simple thermal decomposition route of precursor at 240 oC in the presence of PEG400. The precursor was obtained by room-temperature solid-state grinding reaction between Zn（CH3COO）2-2H2O and Na2CO3. Crystal structure and morphology of the products were analyzed and characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high-resolution transmission electron microscopy （HRTEM）. The results of further experiments show that PEG400 has an important role in the formation of ZnO hexagonal pyramids. Difference between the single and double hexagonal pyramid structure may come from the special thermal decomposition reaction. The photoluminescence （PL） spectra of ZnO hexagonal pyramids exhibit strong near-band-edge emission at about 386 nm and weak green emission at about 550 nm. The Raman-active vibration at about 435 cm-1 suggests that the ZnO hexagonal pyramids have high crystallinity.

Time-resolved photoluminescence of anatase/rutile TiO_2 phase junction revealing charge separation dynamics

Junctions are an important structure that allows charge separation in solar cells and photocatalysts. Here, we studied the charge transfer at an anatase/rutile TiO2 phase junction using time-resolved photoluminescence spectroscopy. Visible （-S00 nm） and near-infrared （NIR, -830 nm） emissions were monitored to give insight into the photoinduced charges of anatase and rutile in the junction, respectively, New fast photoluminescence decay components appeared in the visible emission of futile-phase dominated TiO2 and in the NIR emission of many mixed phase TiO2samples. The fast decays confirmed that the charge separation occurred at the phase junction. The visible emission intensity from the mixed phase TiO2 increased, revealing that charge transfer from rutile to anatase was the main pathway. The charge separation slowed the microsecond time scale photolumines- cence decay rate for charge carriers in both anatase and rutile. However, the millisecond decay of the charge carriers in anatase TiO2 was accelerated, while there was almost no change in the charge carrier dynamics of rutile TiO2. Thus, charge separation at the anatase/rutile phase junction caused an increase in the charge carrier concentration on a microsecond time scale, because of slower electron-hole recombination. The enhanced photocatalytic activity previously observed at ana- tase/rutile phase junctions is likely caused by the improved charge carrier dynamics we report here. These findings may contribute to the development of improved photocatalytic materials.

Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires

Synthesis of amorphous SiCO nanowires was carried out by means of direct current are discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20-100 gm in length and 10-100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

SELECTIVELY-EXCITED PHOTOLUMINESCENCE IN NC-Si:Er

Erbium （Er） doped in nanocrystalline Si （nc-Si：Er） surrounded by SiO2 is investigated by selectivelyexcited photoluminescence（PL） technique. Optical transitions come from nc-Si （peak located at 1.39 eV, denoted as Enc-Si） and Er ions （peak located at 0. 81 eV, denoted as EEr） are measured when nc-Si：Er is excited by 1. 519 eV or higher excitation photon energy（Eex）. Although the Eex of 1.42 eV exceeds the peak energies of Enc-Si and EEr the Enc-Si and EE, emissions are unobserved. A resonant enhancement of the EEr emission is observed in nc-Si：Er. While the PL peak intensitiy of the Enc-Si transition is quenched under this Eex. The resonant-enhanced effect in nc-Si ：Er indicates that the energy transfer process of carriers from nc-Si to nearby Er ions is enhanced by resonant excitation.

Hydrothermal Synthesis of Rhombus-like SmCO3OH Microplates and Its Photoluminescence Property Doped with Eu^3＋

Rhombus-like SmCO3OH microplates with the edge lengths ranging from 5 μm to 10 μm and the thickness about 1.5 μm were synthesized through a simple hydrothermal method using urea as the precipitance. The structure and properties of the rhombus-like SmCO3OH microplates were characterized by X-ray diffraction, field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The optical property of the rhombus-like SmCO3OH microplates doped with Eu^3＋ was investigated by photoluminescence. A broad and strong emission band at 677 nm was obtained, which can be contributed to producing light conversion film.

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline)Aluminum Film

In situ thickness dependent photoluminescence （PL） measurements of tris（8-hydroxyquinoline） aluminum（Alq3） film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.

Hydrothermal synthesis and photoluminescence behavior of CeO_2 nanowires with the aid of surfactant PVP

Well-crystalline CeO_2 nanowires were prepared via a surfactant-assisted hydrothermal process.Reaction temperature and reaction time were changed for the determination of optimal synthesis parameters.The as-obtained products were characterized by X-ray diffraction （XRD）,high-resolution transmission electron microscopy（HRTEM）,and field emission scanning electron microscopy（FESEM）.The results show that single crystal CeO_2 nanowires with high yield and good uniformity can be obtained hydrothermally at 180℃for 12 h with the aid of 2.0 g surfactant（polyvinyl pyrrolidone,PVP）.The role of PVP was then discussed and a possible growth mechanism was proposed. Moreover,room temperature photoluminescence（PL） spectra were obtained for these CeO2 nanowires,which are believed to be related to the abundant defects in these nanostructures.

A Series of Mononuclear Complexes Constructed from Transition Metals and Amino Acid Derived Ligands: Syntheses, Structures and Photoluminescence

Eight neutral mononuclear complexes constructed from transition metals （M = Co（Ⅱ）, Ni（Ⅱ）, Cu（Ⅱ）, Zn（Ⅱ）, Cd（Ⅱ）） and ligands N-（2-pyridylmethyl）-L-phenylalanine （L-Hpmpa） and N-（2-pyridylmethyl）-L-tyrosine （L-Hpmtyr） have been synthesized by both hydrothermal and conventional room temperature reactions. Four of them have been structurally characterized by single-crystal X-ray diffractions. They are： [Co（L-pmpa）2·2H2O] 1, [Ni（L-pmpa）2·2H2O] 2, [Cu（L-pmpa）2·2H2O] 3 and [Cu（L-pmtyr）2·2H2O] 4. Single-crystal X-ray analysis, IR and elemental analysis revealed that complexes 1, 2 and 3 are isostructural. Powder X-ray diffraction, IR and elemental analysis revealed that complexes 4, 5 （Zn[L-pmtyr]2·2H2O）, 6 （Cd[L-pmtyr]2·2H2O）, 7 （Co[L-pmtyr]2·2H2O） and 8 （Ni[L-pmtyr]2·2H2O） are isostructural. The photoluminescence properties of L-Hpmtyr ligand, compounds 5 and 6 were also investigated.

Preparation, Structure, Photoluminescence and Energy Transfer Mechanism of a Novel Holmium Complex

A novel holmium complex [Ho(HIA)_2(H_2O)_4(NO_3)](NO_3)_2(1, HIA = isonicotinic acid) has been synthesized through hydrothermal reactions and characterized by single-crystal X-ray diffraction. Complex 1 crystallizes in the C2/c space group of monoclinic system: a = 14.4797(7), b = 12.4768(2), c = 13.3471(5) ?, β = 118.690(4)°, V = 2115.26(13) ?~3, C_(12)H_(16)HoN_5O_(17), Mr = 667.23, Z = 4, Dc = 2.095 g/cm^3, μ(Mo Kα) = 3.838 mm^(–1) and F(000) = 1304. The crystal structure of 1 is characterized by an isolated structure. Solid-state photoluminescence experiment uncovers that it shows yellow light emission. The emission bands are originated from the characteristic emission of the 4 f electrons intrashell transition of the ~5S_2 → ~5I_8 and ~5F_5 → ~5I_8 of the Ho^(3+) ions. Energy transfer mechanism is explained by the energy level diagram of the Ho3+ ion and the isonicotinic acid ligand. It has remarkable CIE chromaticity coordinates of(0.4929, 0.4632), so it may be a promising color converter for lighting and displays.

Synthesis and Photoluminescence of SiOx Nanotubes

Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 μm, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Thea the SiOs precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nrn with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.

Temperature-dependent photoluminescence on organic inorganic metal halide perovskite CH_3NH_3Pb I_(3-)Cl_ prepared on ZnO/FTO substrates using a two-step method

Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence（PL） peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

Structure and visible photoluminescence of Sm^3＋, Dy^3＋ and Tm^3＋ doped c-axis oriented AlN films

Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ^1D2 to ^3F4 and ^1G4 to ^3H6 intra 4f electron of Tm^3＋, the yellow emissions of AlN：Sm are due to ^4G5/2 to the ^6HJ （J=5/2, 7/2, 9/2, 11/2） and the reddish emissions of AlN：Dy correspond to the ^4F9/2 to ^6HJ （J=5/2, 13/2, 11/2 and 9/2） and ^6Fll/2 transitions.