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The Hole Transport Characteristics of 1,4,5,8,9 and 11-Hexaazatriphenylene-Hexacarbonitrile by Blending 被引量:1
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作者 王艳平 黄金英 +4 位作者 陈江山 乔现锋 杨德志 马东阁 董丽松 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第2期106-110,共5页
The hole transport characteristics of molecule blends of 1, 4, 5, 8, 9 and 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN): N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine (NPB) and HAT-CN: 4,4'-cyclohex... The hole transport characteristics of molecule blends of 1, 4, 5, 8, 9 and 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN): N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine (NPB) and HAT-CN: 4,4'-cyclohexylidenebis[N,N- bis(4-methylphenyl)benzenamine] (TAPC) with various NPB and TAPC mixing concentrations (5 90wt%) are studied. When the concentration is in the range of 5-80wt%, it is found that the hole conductions in the two blends are space-charge-limited current (SCLC) with free trap distributions. The current-voltage characteristics of the two blends show SCLC with exponentiM trap distributions at the concentration of 90wt%. The hole mo- bilities of the two blends are very close (10^-4-10^-3 cm2 V^-1 s-X ), the dependence of electric field and temperature can be described by the modified Poole-Frenkel model. The hole mobility and activation energy of the two blends depending on concentration are similar. 展开更多
关键词 NPB IS CN of the hole Transport Characteristics of 1 4 5 8 9 and 11-Hexaazatriphenylene-Hexacarbonitrile by Blending in by
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Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires
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《Science Foundation in China》 CAS 2017年第4期30-,共1页
With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Luo Junwei(骆军委)from the Institute of Semiconductors,Chinese Academy of Sciences discovered a rapid tran... With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Luo Junwei(骆军委)from the Institute of Semiconductors,Chinese Academy of Sciences discovered a rapid transition of the hole Rashba effect from strong field dependence to saturation 展开更多
关键词 HRE Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires
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