Dual-phase coexistence enables to alleviate resistance drift in phase-change films

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

用brick-wall方法计算黑洞熵的再讨论

在薄层模型brick wall方法的基础上 ,进一步研究了黑洞熵的计算 ,发现黑洞熵来源于其视界面上每一个面元的贡献 .熵与视界面积成正比 ,不但适用于整个黑洞 ,也适用于黑洞视界的局部 .这一思想不但可以用于计算表面各点温度不同的动态黑洞的熵 ,而且使得人们对黑洞熵与视界面积关系的认识更加深入了一步 .

A Novel Approach to Synthesizing Porous ZnO Films: Inorganic Chelating Sol-Gel Method

Porous ZnO films are synthesized by inorganic chelating sol-gel method,which is a novel sol-gel technique using zinc nitrate as starting materials and citric acid as the chelating reagent.The crystal structure,surface morphology,porous and optical properties of the deposited films are investigated.X-ray diffraction pattern analysis shows that crystal structure of the ZnO films is hexagonal wurtzite.Scanning electron microscopy (SEM) shows that the ZnO film is porous.The curve of pore size distribution has two peak values at about 2.02nm and 4.97nm and BET surface area of the ZnO film is 27.57m2/g.In addition,the transmittance spectrum gives a high transmittance of 85% in the visible region and optical bandgap of the ZnO film (fired at 500℃) is 3.25eV.

CdS Thin Films Deposited by CBD Method on Glass

CdS thin films were prepared by chemical-bath-deposited method and the effect of temperature and time on the properties of CdS thin films was studied. Independent of the deposited temperature, the growth was mainly controlled by the ion-by-ion growth mechanism at the beginning of the film deposition, then the cluster-by-cluster mechanism came to be dominant. The growth rate increased faster with the increasing of temperature until the thickness reached the limitation, then thickness instead become thinner. The scanning electron micro- scope results revealed that the morphology of the CdS film changed from pinholes to rough, inhomogeneous surface with increasing deposition time and deposition temperature. The X- ray diffraction results showed the film structure was a mixture of two phases： hexagonal and cubic, and it was very important to controll deposition time to the film＇s crystal phase. All films in depth of approxilnate 100 nm existed above 65% transmittance, the absorption edge became ＂red-shift＂ with temperature rising. At 60 and 70℃, with 20 min deposited-time, the energy band gap was more than 2.42 eV and decreased with time, while at 80 and 90℃ the energy band gap was less than 2.42 eV and increased little when the time changed from 10min to 15 nfin at 80℃.

Grain Size and Photocatalytic Activity of Nanometer TiO_2 Thin Films Prepared by the Sol-gel Method

Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.

Rapid communication Preparation of TiO_2 nanometer thin films with high photocatalytic activity by reverse micellar method

Two kinds of TiO_2 nanometer thin films were prepared on stainless steel bythe reverse micellar and sol-gel methods, respectively. The calcined TiO_ 2 thin films werecharacterized by X-ray diffraction (XRD), atomic force microscopy (AFM), BET surface area and X-rayphotoelectron spectroscopy (XPS). Photocatalytic activity was evaluated by photocatalyticdecoloration of methyl orange aqueous solution. The results showed that the TiO_2 thin filmsprepared by reverse micellar method (designated as RM-TiO_2 films) showed higher photocatalyticactivity than those by sol-gel method (designated as SG-TiO_2 films). This is attributed to the factthat the former is composed of smaller monodispersed spherical particles with a size of about 15 nmand possesses higher surface areas.

Characterization and photoelectrochemical performance of Zn-doped TiO_2 films by sol-gel method

Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, photocathodic protection and photoelectrochemical properties of TiO2 thin films were investigated. It is indicated that the photoelectrical performance of the Zn?TiO2 films is enhanced with the addition of Zn element compared with the pure-TiO2 film and the largest decline by 897 mV in the electrode potential is achieved under 300 °C heat treatment. SEM?EDS analyses show that Zn element is unevenly distributed in Zn?TiO2 films; XRD patterns reveal that the grain size of Zn?TiO2 is smaller than that of pure-TiO2; FTIR results indicate that Zn - O bond forms on Zn?TiO2 surface. Ultraviolet visible absorption spectra prove that Zn?TiO2 shifts to visible light region.Mott?Shottky curves show that the flat-band potential of Zn?TiO2 is more negative and charge carrier density is bigger than that ofpure-TiO2, implying that under the synergy of the width of the space-charge layer, carrier density and flat-band potential, Zn?TiO2 with 300 °C heat treatment displays the best photocathodic protection performance.

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method

Propagation characteristics of surface acoustic waves（SAWs） in ZnO films/glass substrates are theoretically investigated by the three-dimensional（3D） finite element method. At first, for（11ˉ20） ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in（90°, 56.5°, 0°） ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in（56°, 90°, 0°） ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency（TCF） can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.

BIMORPH-TYPE PIEZOELECTRIC THIN FILM BENDING ACTUATORS SYNTHESIZED BY HYDROTHERMAL METHOD

Lead zirconate titanium solid-solution (PZT) thin films with variousthickness are synthesized on titanium substrates by repeated hydrothermal treatments. Young modulus,electric-field-induced displacement and the density of the PZT film are measured respectively.Bimorph- type bending actuators are fabricated using these films. The model, which is used toanalyze the driving ability of bimorph-type bending actuators by hydrothermal method, is set up. Itcan be seen that the driving ability of bimorph-type bending actuators can be greatly improved byoptimizing the thickness of PZT thin film and substrate from the theoretical analysis results. Themeasured values are expected to agree with the theoretical values calculated by the above model.

Preparation and optical characteristics of ZnO films by chelating sol-gel method

The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).

An overview of thermoelectric films:Fabrication techniques,classification,and regulation methods

Thermoelectric materials have aroused widespread concern due to their unique ability to directly convert heat to electricity without any moving parts or noxious emissions.Taking advantages of two-dimensional structures of thermoelectric films,the potential applications of thermoelectric materials are diversified,particularly in microdevices.Well-controlled nanostructures in thermoelectric films are effective to optimize the electrical and thermal transport,which can significantly improve the performance of thermoelectric materials.In this paper,various physical and chemical approaches to fabricate thermoelectric films,including inorganic,organic,and inorganic–organic composites,are summarized,where more attentions are paid on the inorganic thermoelectric films for their excellent thermoelectric responses.Additionally,strategies for enhancing the performance of thermoelectric films are also discussed.

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.

Rapid communication Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method

RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction, scanning electron microscopy,optical transmittance, and electrical resistivity methods. The results indicate that the films arehomogeneous and dense; the structure of the as-deposited films is amorphous and they crystallizeafter annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV,and the electrical resistivity of them is in the order of 10~5 Ω·cm.

Preparation of Nanometer-structured TiO_2 Thin Films by Sol-Gel Method

The transparent anatase TiO 2 nanometer thin films were prepared by the sol-gel method on soda-lime glass.X-ray diffraction,thermal analysis and UV-visible spectrophotometer were used to analyze the formation of the phases.Only increasing the heat-treatment time,the average grain size has no obvious change.The mechanism of grain growth in TiO 2 thin film is probably as follows:the grain of coating will become grain core later;TiO 2 sol constantly deposited on the surface of TiO 2 grain and formed membrane with increasing of coating cycle times;TiO 2 grain in the film grow steadily.

Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method

Bi3.25La0.75Ti3O12（BLT）thin films were prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method.The effect of annealing on their structures and ferroelectric properties was investigated.The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550℃.The remmant polarization increnses and the coercive field decreases with the annealing temperature increasing.The leakage current density of the BLT films annealed at 700℃ is about 5.8×10^-8A/cm^2 at the electrie field of 250kv/cm.

Numerical simulation of dynamic process for liquid film spreading by lattice Boltzmann method and its experimental verification

Combined with the kinetic model of liquid film spreading, a new numerical method of solid-liquid-gas three-phase flow was developed for the moving of contact line, which was a hybrid method of computational fluid dynamics and lattice Boltzmalm method （LBM）. By taking the effect of molecule force in droplet and the wall surface on liquid film into account, the changing law of contact angle with different surface tensions was analyzed on glass and aluminum foil surfaces. Compared with experimental results, the standard deviation by using LBM is less than 0.5°, which validates the feasibility of LBM simulation on the dynamic process of liquid film spreading. In addition, oscillations are discovered both at the initial and end phases. The phenomenon of retraction is also found and the maximum retraction angle is 7.58°. The obtained result shows that the retraction is proved to be correlative with precursor film by tracking the volume change of liquid film contour. Furthermore, non-dimensional coefficient 2 is introduced to measure the liquid film retraction capacity.

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476Ω/sq and transmittance of 76% at 550nm （6 layers）. The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens.

PREPARATION OF TiO_2 THIN FILMS BY MOCVD METHOD

Preparation of TiO2 thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO2 films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation （E） is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature.

Effect of Wafer Size on the Film Internal Stress Measurement by Wafer Curvature Method

Wafer curvature method has been applied to determine the internal stress in the films using Stoney＇s equation.During the film deposition,the wafer fixation on the sample holder will restrict the deformation of the rectangle-shaped wafer,which may result in the stress datum difference along length and width direction.In this paper,the effect of wafer size and the wafer fixation on the TiN film internal stress measured by wafer curvature method was discussed.The rectangle-shaped wafers with different length/width ratios（L/W=1：1,2：1,3：1 and 4：1） were fixed as a cantilever beam.After the TiN films deposition,the profiles of the film/wafer were measured using a stylus profilometer and then the internal stress was calculated using the Stoney equation in the film.The results showed that the fixed end of the wafers limited to some degree the curvature of the wafers along the width direction.For film internal stress measured by wafer curvature method,the wafer profile should be scanned along the length direction and the scan distance should be greater than or equal to half of wafer length.When the length/width ratio of the wafer reached 3：1,the wafer curvature and the calculated stress were basically the same at different positions along the length direction.For film internal stress measured by wafer curvature method,it was recommended that the length/width ratio of wafer should be considered to be greater than or equal to 3：1,and the deformed profile was scanned along the length direction.