Numerical simulation about the effect of fixture on the welding stress and distortion of thin aluminum plate joints

The effect of welding jig on the welding stress and buckling distortion of thin aluminum plate joints was simulated by finite element method （FEM）. The results show that the restraint distance and the heat conduction ability of the fixture do have essential effects on the residual stress and distortion. The residual compressive stress and distortion will be increasing with the increase of the restraint distance, while the residual compressive stress and distortion will be decreasing with the increase of the heat conduction ability of the fixture.

EFFECT OF RESIDUAL STRESS ON THE MARTENSITIC TRANSFORMATION OF SPUTTER-DEPOSITED SMA THIN FILMS

TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation.

Residual stress modeling of thin wall by laser cladding forming

The residual stress generated in the laser cladding could lead to undesirable distortions or even crack formation. In order to better understand the evolution/yielding process of stress field,a 3 D finite-element thermo-mechanical model was established for the laser cladding formation of thin wall with the 17-4 PH powder on the FV520( B) steel. The temperature field was firstly analyzed,based on which the stress field and strain field of the laser cladding forming process were analyzed.In order to validate the prediction,the final residual stress field in the obtained thin wall was tested by X-ray diffraction in comparison with the predicted results.

Stress Analysis of Thin-Walled Pressure Vessels

This paper discusses the stresses developed in a thin-walled pressure vessels. Pressure vessels (cylindrical or spherical) are designed to hold gases or liquids at a pressure substantially higher than the ambient pressure. Equations of static equilibrium along with the free body diagrams will be used to determine the normal stresses in the circumferential or hoop direction and in the longitudinal or axial direction. A case study of internal pressure developed in a soda can was determined by measuring the elastic strains of the surface of the soda can through strain gages attached to the can and connected to Strain indicator Vishay model 3800.

Transverse stress-strain evolution during welding of thin aluminum alloy plate

The FE simulation results of transverse stresses and strains during welding of thin aluminum alloy plate are presented. The results indicate that restraint condition is the main factor that determines whether or not hot cracking will occur. With rigid restraint hot cracking (crater cracking) will occur at the arc-stopping end, and such cracking usually will not occur without external restraint. But under restraint-free condition it is easy for terminal cracks to occur.

Combined stress waves with phase transition in thin-walled tubes

The incremental constitutive relation and governing equations with combined stresses for phase transition wave propagation in a thin-walled tube are established based on the phase transition criterion considering both the hydrostatic pressure and the deviatoric stress. It is found that the centers of the initial and subsequent phase transition ellipses are shifted along the sigma-axis in the sigma tau-plane due to the tension-compression asymmetry induced by the hydrostatic pressure. The wave solution offers the 'fast' and 'slow' phase transition waves under combined longitudinal and torsional stresses in the phase transition region. The results show some new stress paths and wave structures in a thin-walled tube with phase transition, differing from those of conventional elastic-plastic materials.

A STUDY ON THE EFFECT OF RADIAL INERTIA ON THE ELASTO-PLASTIC COMBINED STRESS WAVE PROPAGATION IN THIN-WALLED TUBES

An in-depth analysis of propagation characteristics ofelasto-plastic combined stress waves in circular thin-walled tubeshas been made. In obtaining the simple-wave solution, however, mostresearches have ignored the influence of the circumferential stressrelated to the radial inertial ef- fect in the tubes. In this paperthe incremental elasto-plastic constitutive relations which areconve- nient for dynamic numerical analysis are adopted, and thefinite-difference method is used to study the evolution adpropagation of elasto-plastic combined stress waves in a thin-walledtube with the radial inertial effect of the tube considered. Thecalculation results are compared with those obtained when the radialinertial effect is not considered. The calculation results show thatthe radial inertial effect of a tube has a fairly great influence onthe propagation of elasto-plastic combined stress waves.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Effects of gradient interlayer on residual stress and cracking in TiN thin films

The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method were used to measure the residual stress in thin films. In TiN films, there exists a residual stress of 10 GPa, which can be remarkably decreased by a gradient interlayer between film and substrate. The cracking behavior of films after tension shows that the crack of film/substrate system begins at interface between film and substrate.

Initial residual stress experiment and simulation of thin-walled parts for layer removal method

Thin-walled parts have low stiffness characteristic. Initial residual stress of thin-walled blanks is an important influence factor on machining stability. The present work is to verify the feasibility of an initial residual stress measurement of layer removal method. According to initial residual stress experiment for casting ZL205 A aluminum alloy tapered thin-walled blank by a common method,namely hole-drilling method,three finite element models with initial residual stress are established to simulate the layer removal method in ABAQUS and ANSYS software. By analyzing the results of simulation and experiments,the cutting residual stress inlayer removal process has a significant effect on measurement results. Reducing cutting residual stress is helpful to improve accuracy of layer removal method.

Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this work.Firstly,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are observed.As the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface state.Furthermore,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias stress.The flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also calculated.Finally,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

Effects of Carburized Parts on Residual Stresses of Thin-Rimmed Spur Gears with Symmetric Web Arrangements Due to Case-Carburizing

This paper presents a study on effects of carburized parts on residual stresses of thin-rimmed spur gears with symmetric web arrangements due to the case-carburizing. The carbon content of each element of the FEM gear model due to carburizing was obtained according to Vickers hardness Hv - carbon content C% and C% - d (distance from surface) charts. A heat conduction analysis and an elastic-plastic stress analysis during the case-carburizing process of thin-rimmed spur gears with symmetric web arrangements were carried out for various case-carburizing conditions by using the three-dimensional finite element method (3D-FEM) program developed by authors, and then residual stresses were obtained. The effects of the carburized part, the web structure, and the rim thickness on the residual stress were determined.

Influence of residual stress on the phase equilibrium of Ti(C_xN_y) thin films

In order to provide a theoretic basis for the research of Ti(C_xN_y) thinfilms, the thermodynamic database of Ti-C-N ternary system is established and the phase diagramsections are calculated. In addition to the assessed thermodynamic properties of Ti-C-N system, theinfluence of the residual strain energy of Ti(C_xN_y) thin films on the phase equilibria isanalyzed. The classical formula for calculating the elastic strain energy is expressed into aRedlich-Kister form in order to perform the thermodynamic and equilibrium calculations using theThermo-Calc software. Isothermal sections at 900 and 1100 K are calculated with this database andcompared with those calculated without considering the residual stress. As a result, with theaddition of strain energy delta-fcc Ti(C_xN_y) phase area shrinks. It is therefore concluded thatwith the influence of the residual stress in Ti(C_xN_y) thin solid film, the precipitation of puredelta film requires more precise control of composition.

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

Experimental Study of Inducing Compressive Stress by Anti-welding Heating Treatment in a Thin Plate Weldment with Variant Temperatures

Significant compressive stress may be induced in thin plate weldment by anti-welding heating treatment (AWHT) with a temperature difference above 350℃, and an interesting phenomenon of obvious residual stress reduction on non-treated surface was discovered. The method of AWHT has no great effect on the mechanical properties including hardness, strength and toughness of the metal material. The results in the paper prompt a possibility application in shipbuilding industry.

Coefficient of thermal expansion of stressed thin films

A new technique was proposed to determine the coefficient of thermal expansion (CTE) of thin films at low temperature. Different pre-stress could be applied and the elastic modulus of materials at different temperatures was measured with CTE simultaneously to eliminate the influence of mechanical deformation caused by the pre-stress. By using this technique, the CTEs of polyimide/silica nanocomposite films with different silica doping levels were experimentally studied at temperature from 77 K to 287 K, and some characteristics related to this new technique were discussed.

Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors

This paper investigates the variation of electrical characteristic of indium gallium zinc oxide (IGZO) thin film transistors (TFTs) under gate bias stress. The devices are subjected to positive and negative gate bias stress for prolonged time periods. The effect of bias stress time and polarity on the transistor current equation is investigated and the underlying effects responsible for these variations are determined. Negative gate stress produces a positive shift in the threshold voltage. This can be noted as a variation from prior studies. Due to variation of power factor (n) from two, the integral method is implemented to extract threshold voltage (vt) and power factor (n). Effective, mobility (ueff), drain to source resistance (RDS) and constant k' is also extracted from the device characteristics. The unstressed value of n is deter-mined to be 2.5. The power factor increases with gate bias stress time. The distribution of states in the conduction band is revealed by the variation in power factor.

BEM for Diffraction of Elastic Wave and Dynamic Stress Concentrations in Thin Plate with a Circular Hole

Boundary Element Method (BEM) is employed to run theoretical analsis and numerical calculation of dif-fraction of elastic wave and dynamic stress concentration in an infinite then plate with a cireular hole. Based on the work equivalent law of dynamics,boundary integral equation is established for flexural waves of thin plate. Calculation formulas of influence coefficients are derived using Mathematica software and numerical results are obtained for dynam-ic stress conoentration factors in a then plate with a circular hole.

基于UFAC应力吸收层的抗反射裂缝性能评价

目的为了解决“白加黑”技术中的反射裂缝问题,针对目前常用的悬浮密实型高弹改性沥青混合料(super flexible asphalt concrete,SFAC)应力吸收层变形量较大、容易造成上部沥青加铺层不利于受力的缺陷,方法提出基于CAVF法和富沥青理念优化设计的骨架密实型UFAC应力吸收层。采用有限元ABAQUS数值模拟方法对“白加黑”路面结构进行受力分析,并通过加速加载试验、冲击韧性试验和劈裂试验对材料与结构的抗反射裂缝性能进行评价。结果重载条件下,UFAC应力吸收层和高弹改性沥青应力吸收层的竖向位移相差5.93×10^(-2)mm,沥青加铺层底部所受竖向压应力σy、最大主应力σ_(max)、最大剪应力τ_(12)分别降低24%,32.3%,27.7%。当路面存在严重脱空或常规脱空情况时,基于UFAC应力吸收层的路面结构比GAC加铺路面结构的抗疲劳开裂性能分别提升48%,36%。与传统的悬浮型砂粒式AC-5应力吸收层相比,UFAC-5应力吸收层的冲击韧性增加60.8%,劈裂抗拉强度提高16.8%。结论基于UFAC应力吸收层的沥青加铺技术,通过增大常规改性沥青膜厚保证必要的疲劳抗拉能力,并采用骨架密实型级配显著提高集料间的嵌挤能力和内摩阻力,减小层间结构变形,可有效减缓沥青加铺层反射裂缝的产生与发展。