Wideband tunable REC-DFB laser array using thin-film heaters on the submount

A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.

Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software

This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd0.4Zn0.6S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd0.4Zn0.6S, ZnS and CdS are comparable, Cd0.4Zn0.6S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd0.4Zn0.6S, ZnS and CdS showed that optimum buffer-layer thickness for Cd0.4Zn0.6S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

All-Solid-State Thin-Film Lithium-Sulfur Batteries

Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries.

Stability of high-salinity-enhanced foam:Surface behavior and thin-film drainage

Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs.

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Enhanced efficiency of the Sb_(2)Se_(3)thin-film solar cell by the anode passivation using an organic small molecular of TCTA

Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.

Simulation of Natural Convection Flow with Magneto-Hydrodynamics in a Wavy Top Enclosure with a Semi-Circular Heater

Natural convection flow in enclosure has different applications such as room ventilation, heat exchangers, the cooling system of a building etc. The Finite-Element method based on the Galerkin weighted residual approach is used to solve two-dimensional governing mass, momentum and energy-equations for natural convection flow in the presence of a magnetic field on a roof top with semi-circular heater. In the enclosure the horizontal lower wall was heated, the vertical two walls were adiabatic, inside the semi-circular heater, the wavy top wall cooled. The parameters Rayleigh number, Hartmann number and Prandtl number are considered. The effects of the Hartmann number and Rayleigh number on the streamlines, isotherms, velocity profiles and average Nusselt number are examined graphically. The local Nusselt number and the average Nusselt number of the heated portion of the enclosure with the semi-circular heater are presented in this paper. Finally, for the validation of the existing work, the current results are compared with published results and the auspicious agreement is achieved.

High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO_(2) heterojunction charge trapping stack

Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.

Advances in mobility enhancement of ITZO thin-film transistors:a review

Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.

CO_(2)电弧等离子加热器电热特性研究

对管状阴极轴线式CO_(2)电弧等离子加热器的电热特性进行了实验研究,得到了电流、气体流量、励磁电流和前电极长径比对电弧加热器的伏安特性和热效率的影响规律。采用相似理论模型,对实验数据进行回归分析,得到了加热器伏安特性和热损失系数的近似表达式。研究结果发现,CO_(2)气体流量和电弧电流对加热器的伏安特性和热效率都具有显著的影响,前电极的长径比和励磁电流则只对热效率具有影响。电弧加热器伏安特性和热损失系数的回归公式计算值与实验数据一致性较好,伏安特性回归误差<10.0%,热损失系数回归误差<18.2%。

家用空气源热泵热水器微通道冷凝器仿真研究

为提升家用空气源热泵热水器水箱外微通道冷凝器的性能,建立了家用空气源热泵热水器水箱外微通道冷凝器的准稳态模型,实验验证结果显示模型误差能控制在±9%以内。依据模型对微通道冷凝器的换热量、换热系数、压降等性能进行仿真研究。结果发现,微通道冷凝器为四流程时能够减小压降并保证换热量满足需要;关键参数微通道截面的最佳尺寸在1.6~2.6 mm^(2)系统性能最优,同时扁管内微通道数应控制在16~24根。研究结果为家用空气源热泵热水器微通道冷凝器的设计提供借鉴。

探究燃尽风对墙式对冲锅炉主再热汽温的影响

本文探究了燃尽风对墙式对冲燃烧锅炉主再热汽温的影响。关小燃尽风燃烧器拉杆,可以提高该区域的整体壁温,反之亦然。利用这一规律,可以有效调节主汽温度和再热汽温。

辅助燃煤机组AGC调节的熔盐电加热器动态性能研究

燃煤机组耦合熔盐电加热器系统可大幅提升其调频调峰能力。基于Modelica语言建立了熔盐电加热器的动态模型并完成了试验验证,揭示了熔盐电加热器在熔盐流量扰动和机组自动发电控制(AGC)负荷扰动下的动态特性。基于其动态特性提出了“前馈+PID”调节的温度控制方法,计算分析了熔盐电加热器辅助燃煤机组AGC调节时的电负荷变化特性和热力参数变化特性。研究结果表明,配置10 MW熔盐电加热器可使660 MW燃煤机组AGC变负荷速率提升340%,且所提控制方法能够维持电加热器热力参数的稳定。

大流量高压燃烧加热器振动加速度测试分析

针对不同采样频率下(10、20、50、100、200 kHz)大流量高压燃烧加热器振动加速度差异较大的问题进行了研究,开展了冷吹试验、敲击试验、点火试验。采用时域分析法中的均方根、偏度、峭度,频域分析法中的功率谱密度,时频域分析法中的小波变换,并结合模态参数识别中的多参考最小二乘复频域法重点分析了10 kHz和200 kHz采样频率下的振动数据。获得了传感器的安装谐振频率、安装底座和待测设备组合体的固有频率以及加热器运行的主要频段,与声振频率计算公式的结果偏差小于5%。研究结果表明,采用10 kHz的采样频率能够有效表征加热器的振动情况,该方法可为大型复杂燃烧设备振动测试采样频率的选择提供参考。

Flexible, Transparent and Conductive Metal Mesh Films with Ultra‑High FoM for Stretchable Heating and Electromagnetic Interference Shielding

Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.

FT2800输血输液加温器加压输液时的性能和稳定性评价

目的评价FT2800输血输液加温器在加压输液时的性能和稳定性。方法将输液管放入FT2800输血输液加温器的加热套管,分别设置加温器的目标温度为34、36、38、40、42℃,使用输液泵分别按照5、10、15、20ml/min流速输注4℃和24℃的0.9%氯化钠注射液。在输液管的末端插入一次性体腔温度探头测量出口温度,记录各组液体输注过程中出口温度、预热时间和升温稳定后出口温度的变异系数(CV)。结果4℃和24℃的0.9%氯化钠注射液以5、10、15、20 ml/min流速通过加热套管后,均可以达到设定温度,CV均<5.00%。升温稳定后出口温度的CV均<2.00%。各流速下,24℃0.9%氯化钠注射液升温至38℃所需时间均<2min,4℃0.9%氯化钠注射液升温至38℃均<5.54min。4℃0.9%氯化钠注射液以20 ml/min流速升温至42℃需要5.96 min,升温稳定后至输液结束时出口温度的CV均<2.00%。结论FT2800输血输液加温器在加压输液时可有效加热0.9%氯化钠注射液、达到设置温度,并在输液过程中维持较为恒定的温度,具有较好的稳定性。

核电末级双联低加中湿蒸汽的影响及预防

核电末级双联低加是核电汽轮发电机组回热系统中不可或缺的辅助设备之一,它可以有效利用汽轮机低品位抽汽来加热再热器给水,并带走级间疏水,从而极大的提高了热力系统的循环效率。由于混入级间疏水,进入双联低加的蒸汽湿度很大。本文通过分析湿蒸汽的来源以及特点,研究了湿蒸汽对低压加热器的影响,提出了一些预防措施,以期使低压加热器在核电机组中运行的更安全,提高设备的利用效率。