In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained fr...In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.展开更多
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transist...In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.展开更多
Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by ...Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.展开更多
采用了一种全新的方法对金属陶瓷发热体的电阻温度系数(Temperature Coefficient of Resistance,TCR)进行检测。该法利用外加电源对发热体进行动态升温,并连续监测发热体的温度和阻值变化,通过最小二乘法拟合电阻-温度数据,进行数学计...采用了一种全新的方法对金属陶瓷发热体的电阻温度系数(Temperature Coefficient of Resistance,TCR)进行检测。该法利用外加电源对发热体进行动态升温,并连续监测发热体的温度和阻值变化,通过最小二乘法拟合电阻-温度数据,进行数学计算得到TCR值。研究进一步分析了影响检测稳定性的因素,包括红外聚焦方法、测温点位置、连接点位置及输出电压的选择,并验证了新方法测得的数据准确性与重复性。结果表明,新方法与国标法测试结果基本一致,但具有检测时间短、检测限高、检测数据点多等优势,适用于快速批量测试金属陶瓷发热体的TCR值。展开更多
基金Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704)the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060)+3 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027)the Natural Science Foundation of Beijing,China (Grant No. 1102028)the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407)Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001)
文摘In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.
基金Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.021014380033)
文摘In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
基金the National Natural Science Foundation of China (Grant No. 60371046)
文摘Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.
文摘采用了一种全新的方法对金属陶瓷发热体的电阻温度系数(Temperature Coefficient of Resistance,TCR)进行检测。该法利用外加电源对发热体进行动态升温,并连续监测发热体的温度和阻值变化,通过最小二乘法拟合电阻-温度数据,进行数学计算得到TCR值。研究进一步分析了影响检测稳定性的因素,包括红外聚焦方法、测温点位置、连接点位置及输出电压的选择,并验证了新方法测得的数据准确性与重复性。结果表明,新方法与国标法测试结果基本一致,但具有检测时间短、检测限高、检测数据点多等优势,适用于快速批量测试金属陶瓷发热体的TCR值。
