The dissolving behaviour of Nb and Ti carbonitride precipitates inmicroalloyed steels during isothermal holding at 1300℃ was investigated by Transmission electronmicroscopy (TEM) and energy dispersion x-ray spectrum ...The dissolving behaviour of Nb and Ti carbonitride precipitates inmicroalloyed steels during isothermal holding at 1300℃ was investigated by Transmission electronmicroscopy (TEM) and energy dispersion x-ray spectrum (EDX). It was found that all precipitates inNb-Ti microalloyed steel are (Nb, Ti)(C, N). With holding time increasing, the atomic ratio of Nb/Tiin precipitates decrease gradually. These precipitates still existe even after holding for 48 h at1300℃ while Nb(C, N) precipitates dissolve away in Nb microalloyed steel only after 4 h at the sametemperature. These results show that formation and thermostability of precipitates are considerablyinfluenced by interaction between Nb and Ti.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
基金The work was financially supported by National Key Basic Research and Development Program of China (No. G1998061507)
文摘The dissolving behaviour of Nb and Ti carbonitride precipitates inmicroalloyed steels during isothermal holding at 1300℃ was investigated by Transmission electronmicroscopy (TEM) and energy dispersion x-ray spectrum (EDX). It was found that all precipitates inNb-Ti microalloyed steel are (Nb, Ti)(C, N). With holding time increasing, the atomic ratio of Nb/Tiin precipitates decrease gradually. These precipitates still existe even after holding for 48 h at1300℃ while Nb(C, N) precipitates dissolve away in Nb microalloyed steel only after 4 h at the sametemperature. These results show that formation and thermostability of precipitates are considerablyinfluenced by interaction between Nb and Ti.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
