This paper describes a tunable dual-wavelength Ti：sapphire laser system with quasi-continuous-wave and high-power outputs. In the design of the laser, it adopts a frequency-doubled Nd：YAG laser as the pumping source...This paper describes a tunable dual-wavelength Ti：sapphire laser system with quasi-continuous-wave and high-power outputs. In the design of the laser, it adopts a frequency-doubled Nd：YAG laser as the pumping source, and the birefringence filter as the tuning element. Tunable dual-wavelength outputs with one wavelength range from 700 nm to 756.5 nm, another from 830 nm to 900mn have been demonstrated. With a pump power of 23 W at 532 nm, a repetition rate of 7 kHz and a pulse width of 47.6 ns, an output power of 5.1 W at 744.8 nm and 860.9 nm with a pulse width of 13.2 ns and a line width of 3 nm has been obtained, it indicates an optical-to-optical conversion efficiency of 22.2%.展开更多
The spatial chirp generated in the Ti：sapphire multipass amplifier is numerically investigated based on the one- dimensional （1D） and two-dimensional （2D） Frantz-Nodvik equations. The simulation indicates that th...The spatial chirp generated in the Ti：sapphire multipass amplifier is numerically investigated based on the one- dimensional （1D） and two-dimensional （2D） Frantz-Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti：sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti：sapphire chirped pulse amplifier system.展开更多
We experimentally demonstrate that a tunable supercontinuum（SC） can be generated in a Yb3＋-doped microstructure fiber by the concept of wavelength conversion with a Ti：sapphire femtosecond（fs） laser as the pump....We experimentally demonstrate that a tunable supercontinuum（SC） can be generated in a Yb3＋-doped microstructure fiber by the concept of wavelength conversion with a Ti：sapphire femtosecond（fs） laser as the pump.Experimental results show that an emission light around 1040 nm in an anomalous dispersion region is first generated and amplified by fs pulses in the normal dispersion region. Then, SC spectra from 1100 to 1380 nm and 630 to 840 nm can be achieved by combined effects of higher-order soliton fission and Raman soliton self-frequency shift in the anomalous dispersion region and self-phase modulation, dispersive wave, and four-wave mixing in the normal dispersion region. It is also demonstrated that the 20 nm change of pump results in a 280 nm broadband shift of soliton and the further red-shift of soliton is limited by OH-absorption at 1380 nm.展开更多
Trapped atoms on photonic structures inspire many novel quantum devices for quantum information processing and quantum sensing.Here,we demonstrate a hybrid photonic-atom chip platform based on a Ga N-onsapphire chip a...Trapped atoms on photonic structures inspire many novel quantum devices for quantum information processing and quantum sensing.Here,we demonstrate a hybrid photonic-atom chip platform based on a Ga N-onsapphire chip and the transport of an ensemble of atoms from free space towards the chip with an optical conveyor belts.Due to our platform’s complete optical accessibility and careful control of atomic motion near the chip with a conveyor belt,successful atomic transport towards the chip is made possible.The maximum transport efficiency of atoms is about 50%with a transport distance of 500μm.Our results open up a new route toward the efficient loading of cold atoms into the evanescent-field trap formed by the photonic integrated circuits,which promises strong and controllable interactions between single atoms and single photons.展开更多
A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilat...A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.展开更多
A Kerr-lens mode-locked Ti：sapphire laser operating in a non-soliton regime is demonstrated. Dispersive wave generation is observed as a result of third order dispersion in the vicinity of zero dispersion. The charac...A Kerr-lens mode-locked Ti：sapphire laser operating in a non-soliton regime is demonstrated. Dispersive wave generation is observed as a result of third order dispersion in the vicinity of zero dispersion. The characteristics of the Ti：sapphire l^ser operating in a positive dispersion regime are presented, where the oscillator directly generates pulses with duration continuously tunable from 0.37 ps to 2.11 ps, and 36 fs pulses are achieved atter extracavity compression. The oscillation is numerically simulated with an extended nonlinear Schr6dinger equation, and the simulation results are in good agreement with the experimental results.展开更多
基金Project supported in part by the National Natural Science Foundation of China （Grant Nos 10474071, 60637010, 60671036 and 60278001） and Tianjin Applied Fundamental Research Project, China （07JCZDJC05900）.
文摘This paper describes a tunable dual-wavelength Ti：sapphire laser system with quasi-continuous-wave and high-power outputs. In the design of the laser, it adopts a frequency-doubled Nd：YAG laser as the pumping source, and the birefringence filter as the tuning element. Tunable dual-wavelength outputs with one wavelength range from 700 nm to 756.5 nm, another from 830 nm to 900mn have been demonstrated. With a pump power of 23 W at 532 nm, a repetition rate of 7 kHz and a pulse width of 47.6 ns, an output power of 5.1 W at 744.8 nm and 860.9 nm with a pulse width of 13.2 ns and a line width of 3 nm has been obtained, it indicates an optical-to-optical conversion efficiency of 22.2%.
基金Project supported by 100 Talents Program of Chinese Academy of Sciencesthe National Natural Science Foundation of China(Grant Nos.61475169,61521093,and 11127901)the Youth Innovation Promotion Association of Chinese Academy of Sciences
文摘The spatial chirp generated in the Ti：sapphire multipass amplifier is numerically investigated based on the one- dimensional （1D） and two-dimensional （2D） Frantz-Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti：sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti：sapphire chirped pulse amplifier system.
基金Supported by the National Natural Science Foundation of China under Grant No 61735011the Natural Science Foundation of Hebei Province under Grant Nos F2016203389 and F2018105036+2 种基金the Science and Technology Research Project of College and University in Hebei Province under Grant No BJ2017108the Open Subject of Jiangsu Key Laboratory of Meteorological Observation and Information Processing under Grant No KDXS1107the Science and Technology Project of Tangshan City under Grant No 17130257a
文摘We experimentally demonstrate that a tunable supercontinuum（SC） can be generated in a Yb3＋-doped microstructure fiber by the concept of wavelength conversion with a Ti：sapphire femtosecond（fs） laser as the pump.Experimental results show that an emission light around 1040 nm in an anomalous dispersion region is first generated and amplified by fs pulses in the normal dispersion region. Then, SC spectra from 1100 to 1380 nm and 630 to 840 nm can be achieved by combined effects of higher-order soliton fission and Raman soliton self-frequency shift in the anomalous dispersion region and self-phase modulation, dispersive wave, and four-wave mixing in the normal dispersion region. It is also demonstrated that the 20 nm change of pump results in a 280 nm broadband shift of soliton and the further red-shift of soliton is limited by OH-absorption at 1380 nm.
基金supported by the National Key R&D Program(Grant No.2021YFF0603701)the National Natural Science Foundation of China(Grant Nos.U21A20433,U21A6006,92265210,12104441,12134014,61905234,and 11974335)+1 种基金the USTC Research Funds of the Double First-Class Initiative(Grant No.YD2030002007),USTC Research Funds of the Double First-Class Initiativesupported by the Fundamental Research Funds for the Central Universities。
文摘Trapped atoms on photonic structures inspire many novel quantum devices for quantum information processing and quantum sensing.Here,we demonstrate a hybrid photonic-atom chip platform based on a Ga N-onsapphire chip and the transport of an ensemble of atoms from free space towards the chip with an optical conveyor belts.Due to our platform’s complete optical accessibility and careful control of atomic motion near the chip with a conveyor belt,successful atomic transport towards the chip is made possible.The maximum transport efficiency of atoms is about 50%with a transport distance of 500μm.Our results open up a new route toward the efficient loading of cold atoms into the evanescent-field trap formed by the photonic integrated circuits,which promises strong and controllable interactions between single atoms and single photons.
基金supported by the National Natural Science Foundation of China (Grant No. 61974158)the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456)。
文摘A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB806002)the National High Technology Research and Development Program of China (Grant No. 2007AA03Z447)+3 种基金National Natural Science Foundation of China (Grant Nos. 60678012 and 60838004)the Foundation for Key Program of Ministry of Education, China (Grant No. 108032)FANEDD(Grant No. 2007B34)NCET (Grant No. NCET-07-0597)
文摘A Kerr-lens mode-locked Ti：sapphire laser operating in a non-soliton regime is demonstrated. Dispersive wave generation is observed as a result of third order dispersion in the vicinity of zero dispersion. The characteristics of the Ti：sapphire l^ser operating in a positive dispersion regime are presented, where the oscillator directly generates pulses with duration continuously tunable from 0.37 ps to 2.11 ps, and 36 fs pulses are achieved atter extracavity compression. The oscillation is numerically simulated with an extended nonlinear Schr6dinger equation, and the simulation results are in good agreement with the experimental results.
