Difference in magnetic properties between Co-doped ZnO powder and thin film

This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2＋ ions are homogeneously incorporated into ZnO lattice without forming secondary phases.The distinct difference between film and powder sample is the c-axis （002） preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy （doping electrons） might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.

Infrared emissivities of Mn,Co co-doped ZnO powders

Infrared emissivities of Zn0.99-xMn0.01CoxO （x = 0.00, 0.01, 0.03, 0.05） powders synthesized at different calcination temperatures by solid-state reaction are investigated. Their phases, morphologies, UV absorption spectra, and infrared emissivities are studied by XRD, SEM, UV spectrophotometer, and an IR-2 dual-band infrared emissometer in a range of 8 μm-14 μm. Doped ZnO still has a wurtzite structure, and no peaks of other phases originating from impurities are detected. The optical band-gap decreases as the Co content and calcination temperature ascend, and of which the smallest optical band gap is 2.19 eV. The lowest infrared emissivity, 0.754, is observed in Zn0.98Mn0.01Co0.01O with the increase in Co concentration. The infrared emissivity experiences fluctuations as the calcination temperature increases, and its minimum value is 0.762 at 1100 ℃.

Effects of Heat-treatment Temperature on Eu^(3+) and Li^+ Co-doped ZnO Photoluminescence by Sol-gel Process

The photoluminescence （PL） characteristics of Eu^3＋ and Li^＋ co-doped ZnO PL materials against heat-treatment temperature were discussed. The PL xerogel and powder samples were prepared by solgel process. The emission spectra of all samples showed two broad bands peaking at 590 nm and 620 nm under UV-Vis excitation. But the relative intensity of red PL （620 nm） was much greater than that of green PL （590 nm） of the same sample, that s to say, the red color was the main luminescence. With heat-treatment temperature increase, the two kinds of colors PL intensity decreased, and both the red and green PL intensity of the xerogel samples was much greater than those of powder samples respectively. The XRD patterns revealed that Eu^3＋ ions were successfully incorporated in ZnO crystals in xerogel samples. When heat-treatment temperature reached 350 ℃, the Eu^3＋ began to separate out of the ZnO crystals and Eu2O3 crystals came into being. When the powder sample was subjected to UV-Vis excitation, the energy transfered from the host ZnO emission to Eu^3＋ became weaker than the xerogel sample.

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.

Structural and Optical Properties of Cu2+ + Ce3+ Co-Doped ZnO by Solution Combustion Method

In this work, ZnO, Ce3+ doped ZnO (ZnO/Ce3+) and Cu2+ + Ce3+ co-doped ZnO (ZnO/Cu2+ + Ce3+ ) solid solutions powders were synthesized by a solution combustion method maintaining the Ce3+ ion concentration constant in 3%Wt while the Cu2+ ion concentration was varied in 1, 2, 3, 10 and 20%Wt. After its synthesis, all the samples were annealed at 900?C by 24 h. The ZnO, ZnO/Ce3+ and ZnO/Cu2+ + Ce3+ powders were structurally characterized using X-ray diffraction (XRD) technique, and the XRD patterns showed that for pure ZnO, Cu2+ undoped ZnO/Ce3+ and ZnO/Ce3+ doped with the Cu2+ ion, the three samples exhibited the hexagonal wurtzite ZnO crystalline structure. However, the morphology and particle size of both samples were observed by means of a scanning electron microscopy (SEM);from SEM image, it is observed that the crystallites of both samples are agglomerated forming bigger amorphous particles with an approximate average size of 1 μm. In addition, the photoluminescence of the ZnO, Ce3+ doped ZnO and Cu2+ + Ce3+ doped ZnO samples was measurement under an illumination of 209 nm wavelength (UV region): for the ZnO/Ce3+ sample, your emission spectrum is in the visible region from blue color until red color;the UV band of the ZnO is suppressed. The multicolor emission visible is attributed to the Ce3+ ion photoluminescence, while for the ZnO/Cu2+ + Ce3+, its emission PL spectrum is quenching by the Cu2+ ion, present in the ZnO crystalline.

Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films

This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism （0.16 μB/Co2＋） in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism （0.65 μB/Co2＋） at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.

Room Temperature Ferromagnetismin Co-doped ZnO Bulks

Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated. The results show that the air-annealed samples has similar weak ferromagnetic behavior with the as-sintered samples, but the obvious ferromagnetic behavior is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms=0.73 μB/Co and coercivity Hc=233.8Oe are obtained for the Ar/H2 annealed samples with pure single phase structure when annealing temperature is 600℃.

Fabrication of La,Ce co-doped ZnO nanorods for improving photodegradation of methylene blue

La,Ce co-doped ZnO nanorods(ZnLC)were synthesized through a one-step solvothermal route.The photocatalysts were characterized by X-ray diffraction,Raman spectroscopy,field-emission scanning electron microscopy,energy dispersive X-ray,transmission electron microscopy,UV-vis diffuse reflectance spectroscopy and photo luminescence spectroscopy.The La and Ce doping enhanced the visible light absorption ability of ZnLC and a red shift was detected for ZnLC.Under simulated solar light irradiation,the ZnO doped with 3 at%La and 1 at%Ce(ZnLC1)degrades methylene blue(MB)more effectively than those of pure ZnO,La-doped ZnO(ZnL)and commercially available ZnO.The improved photocatalytic performance of ZnLC1 can be attributed to the high charge separation efficiency as demonstrated by the photoluminescence spectra.Additionally,the photocatalytic experiments reveal that several parameters have their own impact on the MB degradation.Using a variety of radical scavengers,it is discovered that superoxide anion radical plays a crucial role in the degradation of MB.The ZnLC1 is also reused several times without noticeable decrease of photoactivity,indicating that it has a substantial potential for environmental remediation applications.

First-principles investigation of N-Ag co-doping effect on electronic properties in p-type ZnO

The geometric structure, band structure and density of states of pure, Ag-doped, N-doped, and N-Ag codoped wurtzite ZnO have been investigated by the first-principles ultra-soft pseudopotential method based on the density functional theory. The calculated results show that the carrier concentration is increased in the ZnO crystal codoped by N and Ag, and the codoped structure is stable and is more in favour of the formation of p-type ZnO.

[100]取向Al-Ti共掺杂ZnO薄膜的制备与光电性能研究

采用常压固相烧结法制备了Al-Ti共掺ZnO靶材,采用射频磁控溅射技术及真空退火工艺,在普通玻璃衬底上制备了具有[100]取向Al-Ti共掺杂ZnO薄膜(ZATO).采用X射线衍射(XRD)、扫描电子显微镜(SEM)对ZATO薄膜的生长机理、显微结构、形貌进行了测试分析,用四探针测试仪、紫外-可见分光光度计及荧光光谱仪对ZATO薄膜的光电性能进行了测试分析.结果表明,ZATO薄膜经500℃保温3h退火后,择优取向由(002)向(100)方向转变;此时,衍射谱上还观察到超点阵衍射线条.[100]取向ZATO薄膜的光学带隙从退火前的3.29降至2.86,平均可见光透过率从90%降至70%,表现为一般的透过性;而电阻率则从1.89×10^(-2)Ω·cm降至1.25×10^(-3)Ω·cm,呈现较好的导电性.薄膜中均出现了380nm附近的带边发射(NBE)峰以及410、564nm的深能级发射峰,且经500℃保温3h退火后,这些峰的位置并未改变,但峰强均明显减弱.对上述实验机理进行了分析讨论.

The low temperature growth of stable p-type ZnO films in HiPIMS

In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.

Quenching Photoluminescence of Eu(III) by Cu(II) in ZnO:Eu3++Cu2+ Compounds by Solution Combustion Method

In this study Cu2++Eu3+ co-doped ZnO(ZnO/Cu2++Eu3+) solid solution powders were synthesized by solution combustion method using as oxidant agent zinc nitrate hexahydrate and as fuel urea;the Cu2+ concentrations were 0, 1, 2, 3, 10, and 20 %Wt;the Eu3+ ion concentration was fixed in 3%Wt. The samples after were annealed at 900°C by 20 h in air. The structural results showed the largely presence of a wurtzite solid solution of Cu2++Eu3+doped ZnO, at high Cu2+ doping CuO and Eu2CuO4 phases are also present. Morphological properties were analyzed using scanning electron microscopy (SEM) technique. However it is important to remark that the Cu2+ ions suppress the Eu3+ ion photoluminescence (PL) by means of an overlap mechanism between Cu2+ absorption band and Eu3+emission band (e.g. 5D0→7F2) of the Eu3+ emission spectra.

Synthesis of cobalt-doped ZnO/rGO nanoparticles with visible-light photocatalytic activity through a cobalt-induced electrochemical method

ZnO is a semiconductor photocatalyst widely applied in photodegradation of organic pollutants and in photoelectric conversion. ZnO exhibits low photocatalytic activity due to poor absorption in the visible region. In this work, a novel cobalt-induced electrochemical growth method was developed to synthesize cobalt-doped ZnO/rGO nanoparticles in an aqueous solution at room temperature. Cobalt-doped ZnO/rGO nanoparticles exhibited wider visible-light absorption band ranging from 400 nm to 700 nm due to cobalt doping. The surface structure of ZnO formed by the cobalt-induced electrochemical method without other ions is suitable for photocatalytic reactions. The cobalt-doped ZnO/rGO nanoparticles were found to exhibit in photodegradation and photo-electrochemical measurements and exhibited enhanced photocatalytic activity under visible-light irradiation.

Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films

Mn-W co-doped ZnO（ZMWO） thin films with low resistivity and high transparency were successfully prepared on glass substrate by direct current（DC） magnetron sputtering at low temperature.The sputtering power was varied from 65 to 150 W.The crystallinity and resistivity of ZMWO films greatly depend on sputtering power while the optical transmittance and optical band gap are not sensitive to sputtering power.All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.Considering the crystallinity and the electrical and optical properties,we suggest that the optimal sputtering power in this experiment is 90 W and,at this power,the ZMWO film has the lowest resistivity of 9.8×10^（-4）Ω.cm with a high transmittance of approximately 89%in the visible range.

Fabrication and Visible Light Photocatalytic Activity of Co-doped ZnO Nanorods

Co-doped ZnO nanorods were prepared by electrochemical deposition method in aqueous solution. lb study the as-grown samples, several characterizations were carried out. The scanning electron microscopy（SEM） images show that the samples present a rod-like shape with hexagonal cross sections and roughened surthce. There is a slight shift for （002） diffraction peak of Co-doped ZnO nanorods in XRD because Co2~ ions entered into the ZnO lattice. Energy-dispersive X-ray spectroscopy（EDS） and X-ray photoelectron spectroscopy（XPS） results also show the exist of Co in the sample. Photoluminescence（PL） spectra of the samples were observed at room tempera- ture, the UV emission of Co-doped ZnO shows a slight red shift compared with that of undoped ZnO. Thus, we can reach the conclusion that Zn2＋ ions have been substituted by Co2. ions in the ZnO samples. In addition, photocatalysis property of Co-doped ZnO nanorods was investigated under the irradiation of visible light. It was found that the degradation rate of methyl orange is increased greatly nanorods. by Co-doped ZnO nanorods in comparison to undoped ZnO

Structural, ferromagnetic, and optical properties of Fe and Al co-doped ZnO diluted magnetic semiconductor nanoparticles synthesized under high magnetic field

In this study, 2% Fe and 3% Al co-doped ZnO nanoparticles were synthesized using a hydrothermal method under high magnetic field (HMF). The influences of HMF on the structural, optical, and ferromagnetic properties of Fe and Al co-doped ZnO nanoparticles were characterized and analyzed. The single-phase wurtzite structure of the synthesized samples was confirmed using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy analysis. The application of HMF decreases the particle size of the spherical nanocrystal as observed by scanning electron microscopy (SEM). Optical analysis indicated that the absoqjtion edge shifted towards a higher wavelength (red shift). The nanoparticles synthesized under the HMF exhibited high room temperature ferromagnetism (RTFM) performance because of the high oxygen vacancy (VO) content as revealed by X-ray photoelectron spectroscopy (XPS), which was in agreement with the prediction of the bound magnetic polarons theory.

Compensation of Zn substitution and secondary phase controls effective mass and weighted mobility in In and Ga co-doped ZnO material

Conductivity s and thermal conductivity k are directly related to carrier concentration while Seebeck coefficient S is inversely proportional to carrier concentration.Therefore,improving thermoelectric(TE)performance is challenging.Here,the first-time analysis of secondary phase-controlled TE performance in terms of density-of-state effective mass m*d,weighted mobility mw and quality factor B is discussed in ZnO system.The results show that the secondary spinel phase Ga2O_(3)(ZnO)9 not only impacts on k but also on s and S at high temperature,while the effect of carrier concentration seem to be dominant at low temperature.For the high-spinel-segregation sample,a compensation of dopant atoms from the spinel to substitutional sites in the ZnO matrix at high temperature leads to a low decreased rate of temperaturedependent m*d.The compensation process also induces a band sharpening,a small mw reduction,and a large B enhancement.As a result,In and Ga co-doped ZnO bulk with the highest spinel segregation achieves the greatest PF improvement by 112.8%,owing to enhanced Seebeck coefficient by 110%as compared to the good Zn-substitution sample.

不同衬底沉积Ti-Al共掺杂ZnO薄膜的性能对比研究

利用直流磁控溅射法,在玻璃衬底和Si片衬底上分别沉积出了Ti-Al共掺杂ZnO透明导电薄膜(TAZO),并对这两种衬底上的薄膜的应力、结构和光电性能进行了对比研究。结果表明:玻璃衬底和Si片衬底上沉积的TAZO薄膜均为具有c轴择优取向的六角纤锌矿结构多晶薄膜,Si片衬底的TAZO薄膜的导电性能优于玻璃衬底上的TAZO薄膜,53 min沉积出的两种衬底上的TAZO薄膜都具有最小电阻率,Si片衬底上薄膜的最小电阻率为5.07×10-4Ω.cm,玻璃衬底上薄膜的最小电阻率为5.48×10-4Ω.cm;玻璃衬底上的TAZO薄膜的应力小于Si片衬底上TAZO薄膜的应力。玻璃衬底上沉积TAZO薄膜样品的可见光透过率均大于90%,两种衬底上沉积TAZO薄膜的折射率都在2.0左右。

Ti-Al共掺ZnO薄膜的应力、结构和光电性能研究

利用直流磁控溅射工艺,在水冷玻璃衬底上成功沉积出了高透光、低电阻率的Ti-Al共掺ZnO（TAZO）透明导电薄膜。X射线衍射（XRD）研究结果表明,TAZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜。研究了TAZO薄膜的应力、结构以及光电性能与薄膜厚度的关系,结果表明,当薄膜厚为531 nm时,薄膜晶格畸变最小,具有最小压应力（绝对值）0.726 6 Gpa,同时具有最小电阻率3.35×10-4Ω.cm,其光学带隙大约为3.58 eV。所制备薄膜附着性能良好,在波长为400~760 nm波段的可见光中平均透过率都超过了91%。