Our previous research results have shown that the Ti-O films with appropriate characteristics possess great potentials for biomaterials application. In this paper, using plasma immersion ion implantation and depositio...Our previous research results have shown that the Ti-O films with appropriate characteristics possess great potentials for biomaterials application. In this paper, using plasma immersion ion implantation and deposition (PIII-D), titanium oxide thin films are fabricated onto silicon wafer. The antithrombogenesis of films is evaluated in vitro through the platelet adhesion investigation. The biological behavior of human umbilical vein en-dothelial cells (HUVEC) on the film surface is investigated in vitro by endothelial cell (EC) culture. Our results reveal that the crystalline Ti-O films exhibit attractive blood compatibil-ity. The in vitro HUVEC-cultured investigation of Ti-O film surface has justified that the biological behavior of HUVECs on different structure surfaces is significantly different. The adherence, growth and proliferation of HUVECs to the crystalline Ti-O film surface are in order, by forming a perfect single layer, preserving the natural original shape and dis-playing the cobblestone road metal rank, and obviously superior to that on the amorphous Ti-O film surface. According to our study, the crystalline Ti-O film, with proper microstruc-ture, is helpful for seeding ECs and can be used as a functional surface for the adherence and growth of ECs.展开更多
In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO T...In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.展开更多
利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好...利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好的抗凝血特性以及禁带宽度为 3.2eV的半导体特性。此外 ,探讨了Ti Ta O涂层的抗凝血机理 ,并提出材料的半导体特性是影响Ti Ta O涂层抗凝血特性的主要原因之一。展开更多
LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared o...LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO2 /Si substrates by Sol-gel method. The composition depth profile of a typical up-graded film was determined by using a combination of Auger Electron Spectroscopy (ASE) and Ar Ion Etching. The results confirm that the processing method produces graded composition changes. XRD analysis showed that the graded thin films possessed composite structure of tetragonal and rhombohedral. The dielectric constants of Up-graded and Down-graded thin films were higher than that of each thin film unit. The dielectric constants were 277 and 269 at 10 kHz, respectively. The loss tangents were 0.019 and 0.018 at 10 kHz, respectively. The Hysteresis loops showed that the remanent polarizations of graded thin films were higher than that of each thin film unit, but the coercive fields were smaller. The remanent polarizations of Up-graded and Down-graded thin films were 30.06 and 26.96 μC·cm-2, respectively. The coercive fields were 54.14, 54.23 kV·cm-1, respectively. The pyroelectric coefficients of Up-graded and Down-graded thin films were 4.62, 2.51×10-8 C·cm-2·K-1 at room temperature, respectively. They were higher than that of each thin film unit.展开更多
基金This work was supported by the Key Basic Research Project (Grant Nos. G1999064705 and 2005CB623904)the National Natural Science Foundation of China (Grant Nos. 30300087 and 30318006).
文摘Our previous research results have shown that the Ti-O films with appropriate characteristics possess great potentials for biomaterials application. In this paper, using plasma immersion ion implantation and deposition (PIII-D), titanium oxide thin films are fabricated onto silicon wafer. The antithrombogenesis of films is evaluated in vitro through the platelet adhesion investigation. The biological behavior of human umbilical vein en-dothelial cells (HUVEC) on the film surface is investigated in vitro by endothelial cell (EC) culture. Our results reveal that the crystalline Ti-O films exhibit attractive blood compatibil-ity. The in vitro HUVEC-cultured investigation of Ti-O film surface has justified that the biological behavior of HUVECs on different structure surfaces is significantly different. The adherence, growth and proliferation of HUVECs to the crystalline Ti-O film surface are in order, by forming a perfect single layer, preserving the natural original shape and dis-playing the cobblestone road metal rank, and obviously superior to that on the amorphous Ti-O film surface. According to our study, the crystalline Ti-O film, with proper microstruc-ture, is helpful for seeding ECs and can be used as a functional surface for the adherence and growth of ECs.
文摘In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.
文摘利用磁控溅射技术合成了Ti Ta O薄膜涂层。采用体外血小板粘附试验、动态凝血时间测定以及动物体内试片埋植试验等评价方法 ,对涂层的抗凝血特性进行了研究 ;并采用Tauc法研究了涂层的禁带宽度。研究结果表明 ,Ti Ta O薄膜涂层具有良好的抗凝血特性以及禁带宽度为 3.2eV的半导体特性。此外 ,探讨了Ti Ta O涂层的抗凝血机理 ,并提出材料的半导体特性是影响Ti Ta O涂层抗凝血特性的主要原因之一。
文摘LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO2 /Si substrates by Sol-gel method. The composition depth profile of a typical up-graded film was determined by using a combination of Auger Electron Spectroscopy (ASE) and Ar Ion Etching. The results confirm that the processing method produces graded composition changes. XRD analysis showed that the graded thin films possessed composite structure of tetragonal and rhombohedral. The dielectric constants of Up-graded and Down-graded thin films were higher than that of each thin film unit. The dielectric constants were 277 and 269 at 10 kHz, respectively. The loss tangents were 0.019 and 0.018 at 10 kHz, respectively. The Hysteresis loops showed that the remanent polarizations of graded thin films were higher than that of each thin film unit, but the coercive fields were smaller. The remanent polarizations of Up-graded and Down-graded thin films were 30.06 and 26.96 μC·cm-2, respectively. The coercive fields were 54.14, 54.23 kV·cm-1, respectively. The pyroelectric coefficients of Up-graded and Down-graded thin films were 4.62, 2.51×10-8 C·cm-2·K-1 at room temperature, respectively. They were higher than that of each thin film unit.
