Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN w...Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.展开更多
The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The ...The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The behaviors of film damaging were found to be characterized by:an internal tensile stress which exceeded its tensile strength for TiN facing upward,and a shearing stress along film substrate interface which exceeded its adhesive strength for TiN facing downward.The measured tensile and adhcsive strengths are 603 and 242 MPa respectively.展开更多
Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case ...Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux. The effect of these parameters on the amount and the size distribution of droplet-particles are investigated, and the results have provided sufficient evidence for the physical model, in which particles reduction is due to the case that the particles are negatively charged and repulsed from negative pulse electric field. The effect of sample configuration on amount and size distribution of the particles are analyzed. The results of the amount and size distribution of the particles are compared to those in the case of samples placing parallel to the plasma flux.展开更多
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope （SEM）, and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction （XRD）.T...The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope （SEM）, and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction （XRD）.The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.展开更多
The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in ...The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in some cases.Nevertheless.a good confirmation between the variation of FWHM-sin^2(?) and 20-sin^2(?) was revealed for every nonlinear forms.It followed that the effect of nondistributed micro-strains might exist in plasma assisted vapor deposited films,which usually have a strong crystal orientation,and the method of effectively separating macro-stress and micro-strain must be applied for the precise determination of internal stresses in PACVD films.展开更多
A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were s...A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.展开更多
The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure inves...The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China展开更多
TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were mea...TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.展开更多
The influence of nitrogen concentration in mixed gas on temperature conditions, structure and phase composition of the TiN film deposited by arc spraying has been investigated. By electron microscopic investigations a...The influence of nitrogen concentration in mixed gas on temperature conditions, structure and phase composition of the TiN film deposited by arc spraying has been investigated. By electron microscopic investigations and X-ray diffraction phase analysis was recognized forming stages and structuring process of the film with main cubic phase (111) TiN. It was discovered that forming stages and process of structuring of ion-plasma TiN films are affected by both film temperature and its rate of heating.展开更多
TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties...TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.展开更多
Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering.The influence of substrate biases on structure,mechanical and corrosion properties of the deposited films was studied using X-ray diffraction...Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering.The influence of substrate biases on structure,mechanical and corrosion properties of the deposited films was studied using X-ray diffraction,field emission scanning electron microscopy,nanoindentation and electrochemical techniques.The deposited films have a columnar structure,and their preferential orientation strongly depends on bias voltage.The preferential orientations change from（200）plane at low bias to（111）plane at moderate bias and then to（220）plane at relatively high bias.Nanohardness H,elastic modulus E,H/E＊and H3/E＊2 ratios,and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage.All the best values appear at bias of-120 V,attributing to the film with a fine,compact and less defective structure.This demonstrates that there is a close relation among microstructure,mechanical and corrosion properties of the TiN films,and the film with the best mechanical property can also provide the most effective corrosion protection.展开更多
In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film o...In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by contro...Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.展开更多
This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium pa...This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.展开更多
Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
基金Supported by National Natural Science Foundation of China (Nos.10775036, 50773015)Program for New Century Excellent Talents in University in ChinaCity University of Hong Kong Strategic Research of China (No.7002138)
文摘Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.
文摘The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The behaviors of film damaging were found to be characterized by:an internal tensile stress which exceeded its tensile strength for TiN facing upward,and a shearing stress along film substrate interface which exceeded its adhesive strength for TiN facing downward.The measured tensile and adhcsive strengths are 603 and 242 MPa respectively.
基金supported by the National Natural Science Foundation of China under grant No.50801062
文摘Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux. The effect of these parameters on the amount and the size distribution of droplet-particles are investigated, and the results have provided sufficient evidence for the physical model, in which particles reduction is due to the case that the particles are negatively charged and repulsed from negative pulse electric field. The effect of sample configuration on amount and size distribution of the particles are analyzed. The results of the amount and size distribution of the particles are compared to those in the case of samples placing parallel to the plasma flux.
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
文摘The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope （SEM）, and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction （XRD）.The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.
文摘The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in some cases.Nevertheless.a good confirmation between the variation of FWHM-sin^2(?) and 20-sin^2(?) was revealed for every nonlinear forms.It followed that the effect of nondistributed micro-strains might exist in plasma assisted vapor deposited films,which usually have a strong crystal orientation,and the method of effectively separating macro-stress and micro-strain must be applied for the precise determination of internal stresses in PACVD films.
文摘A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.
文摘The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China
文摘TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.
文摘The influence of nitrogen concentration in mixed gas on temperature conditions, structure and phase composition of the TiN film deposited by arc spraying has been investigated. By electron microscopic investigations and X-ray diffraction phase analysis was recognized forming stages and structuring process of the film with main cubic phase (111) TiN. It was discovered that forming stages and process of structuring of ion-plasma TiN films are affected by both film temperature and its rate of heating.
基金financially supported by the National Natural Science Foundation of China (No. 51171197)
文摘TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.
基金supported by the National Natural Science Foundation of China(51171118)
文摘Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering.The influence of substrate biases on structure,mechanical and corrosion properties of the deposited films was studied using X-ray diffraction,field emission scanning electron microscopy,nanoindentation and electrochemical techniques.The deposited films have a columnar structure,and their preferential orientation strongly depends on bias voltage.The preferential orientations change from（200）plane at low bias to（111）plane at moderate bias and then to（220）plane at relatively high bias.Nanohardness H,elastic modulus E,H/E＊and H3/E＊2 ratios,and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage.All the best values appear at bias of-120 V,attributing to the film with a fine,compact and less defective structure.This demonstrates that there is a close relation among microstructure,mechanical and corrosion properties of the TiN films,and the film with the best mechanical property can also provide the most effective corrosion protection.
文摘In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
文摘Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
文摘This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
