Effects of gradient interlayer on residual stress and cracking in TiN thin films

The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method were used to measure the residual stress in thin films. In TiN films, there exists a residual stress of 10 GPa, which can be remarkably decreased by a gradient interlayer between film and substrate. The cracking behavior of films after tension shows that the crack of film/substrate system begins at interface between film and substrate.

Preparation and characterization of single(200)-oriented TiN thin films deposited by DC magnetron reactive sputtering

Single(200)-oriented TiN thin films were deposited on quartz substrate by direct current(DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 ℃.The effects of sputtering pressure and substrate temperature on the crystalline nature,morphology,electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction(XRD),atomic force microscopy(AFM),four-point resistivity test system and ultraviolet visible near-infrared(UV-Vis-NIR) spectroscopy,respectively.The results show that single(200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600 ℃ with the grain size increasing from 35.9 to 64.5 nm.The resistivity of the product is as low as95 μΩ·cm,and the value of the optical reflectance is above68 % in the near-infrared(NIR) range of 760-1500 nm.

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

SYNTHESIS AND THERMAL STABILITY OF NANOCOMPOSITE nc-TiN/a-TiB_2 THIN FILMS

Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.

Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices

Resistive RAM is a promising, relatively new type of memory with fast switching characteristics. Metal chalcogenide films have been used as the amorphous semiconductor layer in these types of devices. The amount of crystallinity present in the films may be important for both reliable operation and increased longevity of the devices. Germanium sulfide films can be used for these devices, and a possible way to tune the crystalline content of the films is by substituting Sn for some of the Ge atoms in the film. Thin films of GexSnySz containing varying amounts of tin were deposited in a plasma enhanced chemical vapor deposition reactor. Films with 2%, 8%, 15%, 26%, and 34% atomic percentage Sn were deposited to determine crystallinity and structural information with XRD and Raman spectroscopy. Based on these depositions it was determined that at about 8% Sn content and below, the films were largely amorphous, and at about 26% Sn and above, they appeared to be largely crystalline. At 15% Sn composition, which is between 8% and 26%, the film is more a mixture of the two phases. Based on this information, current-voltage (IV) curves of simple memory switching devices were constructed at 5% Sn (in the amorphous region), at 25% Sn (in the crystalline region), and at 15% (in the mixed region). Based on the IV curves from these devices, the 15% composition gave the best overall switching behavior suggesting that a certain degree of order in the semiconductor layer is important for RRAM devices.

光栅阀角度对电弧离子镀TiN薄膜结构及性能的影响

通过调整光栅阀角度开展对电弧离子镀TiN薄膜结构及力学性能的研究。实验结果表明:光栅阀角度对TiN薄膜的择优取向无明显影响,薄膜均以TiN(200)面择优取向为主;随着光栅阀角度的增加,TiN薄膜中N与Ti原子比均呈欠化学计量比,且先增加而后降低,在光栅阀角度为10°时N与Ti原子比最高;TiN薄膜表面粗糙度随着光栅阀角度增加整体呈增加趋势;在光栅阀角度为10°时,TiN薄膜呈现出最高硬度和最低磨损率,具有最佳力学和耐磨性能。在电弧离子镀真空镀膜过程中,光栅阀角度通过影响气体流量进而影响薄膜性能,但对于TiN薄膜结构无明显影响,只有选择合适的光栅阀角度才能有助于薄膜综合性能的改善。

ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV^(35) Cl^(6+) BEAM

In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

Tin sulfide （SnS） thin films were prepared by electrodeposition onto fluorine-doped tin oxide （FTO） glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials （L） and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction （XRD）, field-emission scanning electron microscopy （FESEM）, photoluminescence （PL）, and ultraviolet-visible （UV-Vis） spectroscopy. The FESEM images demonstrated that changes in the deposition potential （E） and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis （EDXA） results showed that the SrdS atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an SrdS atomic ratio approximately equal to l, the optimal Sn2＋/S2O2- 3 molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy （Eg） were studied using PL and UV-Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared （IR） region. The UV-Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction（XRD） measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has（200） preferential orientation, but this orientation changes to（211） direction with Pr and Ta doping ratio increasing. Atomic force microscopy（AFM） and scanning electron microscopy（SEM） analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible（UV-Vis） spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.

不同工艺参数对TiN薄膜形貌和力学性能的影响

随着硬质薄膜的快速发展,TiN薄膜已经在诸多领域成功应用。通过采用PVD多功能离子镀膜机在不同工艺参数条件下制备了TiN薄膜,研究不同工艺参数对TiN薄膜表面大颗粒形貌和力学性能的影响。利用扫描电子显微镜对TiN薄膜的表面形貌进行研究,利用球坑仪、划痕仪和显微硬度计对薄膜的力学性能进行分析。研究结果表明,弧电流越大,大颗粒尺寸越大,薄膜厚度及硬度也会显著增加;当沉积温度升高时,TiN表面大颗粒的尺寸与数量显著减小,结合强度出现先增加后减小的趋势;当负偏压增大时,TiN薄膜表面大颗粒出现了先减少后增多的趋势,而薄膜的厚度和硬度也会相应降低。该研究为生产中制备性能优良的TiN薄膜提供了一定的理论依据。

Preparation and characterization of oil-soluble In_2O_3 nanoparticles and In_2O_3–SnO_2 nanocomposites and their calcined thin films

Oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites were prepared in oleylamine via decomposition of metal acety- lacetonate precursors. Thin films of In2O3 and In2O3-SnO2 were obtained by spin-coating solutions of the oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites onto substrates and then calcining them. Transmission electron microspectroscopy, scanning electron mi- crospectroscopy, atomic force microspectroscopy, X-ray diffraction, ultraviolet-visible absorption, and photoluminescence spectroscopy were used to investigate the properties of the nanoparticles and thin films. The In2O3 nanoparticles were cubic-phased spheres with a diame- ter of-8 nm; their spectra exhibited a broad emission peak centered at 348 nm. The In2O3-SnO2 nanocomposites were co-particles composed of smaller In2O3 particles and larger SnO2 particles; their spectra exhibited a broad emission peak at 355 nm. After the In2O3-SnO2 nano- composites were calcined at 400℃, the obtained thin films were highly transparent and conductive, with a thickness of 30-40 nm; the sur- faces of the thin films were smooth and crack-free.

模压成型压力对氧化铟锡(ITO)靶材性能影响研究

以化学共沉淀-煅烧法制备的纳米ITO粉体为原料,通过模压、冷等静压成型,采用常压烧结法制备了ITO靶材,研究了模压成型压力对ITO靶材相对密度、电阻率和晶粒尺寸的影响。结果表明,模压成型压力60 MPa且烧结条件适宜时,制得的ITO靶材相对密度为99.81%、电阻率为1.707×10^(-4)Ω·cm、平均晶粒尺寸为7.62μm。研究结果可为ITO靶材的致密化与大型化生产提供借鉴。

磁控溅射TiN薄膜的工艺及电学性能研究

采用反应直流磁控溅射法，在Si基底上制备TiN薄膜。研究了溅射沉积过程申溅射气压和Ar／N2气体流量比对TiN薄膜结构及其电学性能的影响，并对试验结果进行了分析。研究发现，在Ar／N2气体流量比为15：1时，TiN薄膜的表面均方根粗糙度和电阻率都为最小。当溅射气压增大时，薄膜厚度减小。当溅射气压为0．3～0．5Pa时，薄膜表面较光滑，电阻率较小。

TiN薄膜制备方法、性能及其应用的研究进展

综述了TiN薄膜的制备方法及进展,介绍了物理气相沉积、化学气相沉积、等离子化学气相沉积及光化学气相沉积等各种TiN薄膜的制备方法,评述了各种制备工艺的优缺点。介绍了TiN薄膜在超硬耐磨、耐腐蚀等方面研究的新进展,最后对TiN薄膜的应用范围和领域作了展望。

氩气与氮气流量比对磁控溅射法制备TiN薄膜的影响

用直流反应磁控溅射法在Si(100)基底上制备了TiN薄膜,采用X射线衍射仪和原子力显微镜对其结构和形貌进行了表征,利用四探针测试仪测量了TiN薄膜的方块电阻,使用紫外可见分光光度计测定了薄膜反射率;研究了溅射沉积过程中氩气与氮气流量比对TiN薄膜结构及性能的影响。结果表明:在不同氩气与氮气流量比下,所制备薄膜的主要组成相是(200)择优取向的立方相TiN;随着氩气与氮气流量比的增加,薄膜厚度逐渐增大,而表面粗糙度与电阻率先减小后增大;当氩气与氮气流量比为15:1时,薄膜表面粗糙度和电阻率均达到最小值;TiN薄膜的反射率与氩气与氮气流量比的关系不大。

电弧离子镀TiN薄膜中的缺陷及其形成原因

分析了电弧离子镀(AIP)TiN薄膜中的主要缺陷-熔滴、孔洞和疏松等。结果表明:这些缺陷存在于晶内、晶界或者贯穿于整个薄膜;缺陷的存在极大地影响了薄膜的性能;缺陷密度与镀膜方法及具体的工艺参数有密切关系;使用磁过滤器镀制薄膜可显著减少上述缺陷,从而提高薄膜的各种性能。认为使用磁过滤器镀制TiN及其各种复合或多层薄膜是一种切实有效的方法,是今后制备高性能TiN及其复合膜的发展方向,另外,缩短脉冲电弧在高值时的时间,用人工来减少薄膜缺陷也是一种行之有效的方法。

磁控溅射制备TiN薄膜影响因素的研究

采用磁控溅射法在硅基片表面沉积TiN薄膜,研究了溅射气压、氮气流量、氩气流量、溅射电流等溅射参数对TiN薄膜导电性能的影响。实验参数采用正交设计法选取,经模糊分析得出,所考察的因素对薄膜光催化性能的影响次序由大到小依次为溅射电流、气体流量、溅射气压。进一步研究影响最大的溅射电流对薄膜结构与电学性能的影响,结果发现:溅射电流的增大使溅射粒子的动能随之增大,薄膜生长加快;薄膜的电阻率存在最小值。

纳米结构TiN薄膜的制备与性能研究

利用自行研制的磁过滤等离子体设备 ,在室温条件下的不锈钢基底上成功地制备了性能良好的纳米结构TiN薄膜。运用原子力显微镜和X射线衍射仪对其结构和形貌进行了表征。利用纳米硬度仪测量了TiN薄膜的硬度和弹性模量。结果显示 :沉积的TiN薄膜表面非常平整光滑 ,致密而无缺陷 ;硬度远高于粗晶TiN的硬度 ;TiN晶粒尺寸在 3 0～ 5 0nm ;

氮氩流量比对磁控溅射TiN薄膜生长织构的影响

采用直流反应磁控溅射法,通过控制氮氩流量比,在Si(111)衬底上沉积了TiN薄膜,并用织构系数来量化TiN薄膜的生长取向。对TiN薄膜的织构、物相组成、形貌进行表征,分析了溅射沉积过程中氮氩流量比对TiN薄膜生长织构的影响,同时还分析了不同织构薄膜的表面及截面形貌。结果表明:氮氩流量比低于1∶30时,薄膜的织构由(200)转变为(111),同时还出现了TiN0.61相;(111)织构的薄膜表面均匀,致密性好,粗糙度小,以氮氩流量比为1∶60时所得织构系数为1.63的(111)薄膜最好。