Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film o...In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.展开更多
The TiNw-AINp/Al composite has been successfully fabricated by gas-liquid reaction method in an intensive electromagnetic mixing and casting in an appropriate cooling condition. The as-cast samples of the composite ex...The TiNw-AINp/Al composite has been successfully fabricated by gas-liquid reaction method in an intensive electromagnetic mixing and casting in an appropriate cooling condition. The as-cast samples of the composite exhibit a homogeneous distribution of TiNw and AINp, and the in situ formed TiN whisker has a mean diameter of 0.5 μm and mean aspect ratio of 5.8~7.5, and the diameter of the AIN particulates is less than 5 μm. TEM observation indicates that there exist some submicron and nanometer sized in situ formed TiNw-AINp in α-Al matrix. The formation mechanism of in situ formed TiNw and AINp is also discussed展开更多
This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium pa...This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.展开更多
Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN w...Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by contro...Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.展开更多
High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were mea...TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.展开更多
The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The ...The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The behaviors of film damaging were found to be characterized by:an internal tensile stress which exceeded its tensile strength for TiN facing upward,and a shearing stress along film substrate interface which exceeded its adhesive strength for TiN facing downward.The measured tensile and adhcsive strengths are 603 and 242 MPa respectively.展开更多
Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case ...Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux. The effect of these parameters on the amount and the size distribution of droplet-particles are investigated, and the results have provided sufficient evidence for the physical model, in which particles reduction is due to the case that the particles are negatively charged and repulsed from negative pulse electric field. The effect of sample configuration on amount and size distribution of the particles are analyzed. The results of the amount and size distribution of the particles are compared to those in the case of samples placing parallel to the plasma flux.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in ...The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in some cases.Nevertheless.a good confirmation between the variation of FWHM-sin^2(?) and 20-sin^2(?) was revealed for every nonlinear forms.It followed that the effect of nondistributed micro-strains might exist in plasma assisted vapor deposited films,which usually have a strong crystal orientation,and the method of effectively separating macro-stress and micro-strain must be applied for the precise determination of internal stresses in PACVD films.展开更多
Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum ...Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.展开更多
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
文摘In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.
文摘The TiNw-AINp/Al composite has been successfully fabricated by gas-liquid reaction method in an intensive electromagnetic mixing and casting in an appropriate cooling condition. The as-cast samples of the composite exhibit a homogeneous distribution of TiNw and AINp, and the in situ formed TiN whisker has a mean diameter of 0.5 μm and mean aspect ratio of 5.8~7.5, and the diameter of the AIN particulates is less than 5 μm. TEM observation indicates that there exist some submicron and nanometer sized in situ formed TiNw-AINp in α-Al matrix. The formation mechanism of in situ formed TiNw and AINp is also discussed
文摘This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.
基金Supported by National Natural Science Foundation of China (Nos.10775036, 50773015)Program for New Century Excellent Talents in University in ChinaCity University of Hong Kong Strategic Research of China (No.7002138)
文摘Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
文摘Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
文摘TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.
文摘The cantilever bending test,particularly monitored by an acoustic emission technique, was adopted to measure the tensile and interfacial adhesive strengths of the HCD ion plated fine TiN film on pure Ti substrate.The behaviors of film damaging were found to be characterized by:an internal tensile stress which exceeded its tensile strength for TiN facing upward,and a shearing stress along film substrate interface which exceeded its adhesive strength for TiN facing downward.The measured tensile and adhcsive strengths are 603 and 242 MPa respectively.
基金supported by the National Natural Science Foundation of China under grant No.50801062
文摘Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux. The effect of these parameters on the amount and the size distribution of droplet-particles are investigated, and the results have provided sufficient evidence for the physical model, in which particles reduction is due to the case that the particles are negatively charged and repulsed from negative pulse electric field. The effect of sample configuration on amount and size distribution of the particles are analyzed. The results of the amount and size distribution of the particles are compared to those in the case of samples placing parallel to the plasma flux.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
文摘The measurement of internal stresses in a PACVD TiN film proved experimentally to be difficult by a conventional X-ray diffraction technique.The linear relationship between 2θ and sin^2(?) could hardly be reached in some cases.Nevertheless.a good confirmation between the variation of FWHM-sin^2(?) and 20-sin^2(?) was revealed for every nonlinear forms.It followed that the effect of nondistributed micro-strains might exist in plasma assisted vapor deposited films,which usually have a strong crystal orientation,and the method of effectively separating macro-stress and micro-strain must be applied for the precise determination of internal stresses in PACVD films.
文摘Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.
