Preparation of TiO<sub>2</sub> thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO<su...Preparation of TiO<sub>2</sub> thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO<sub>2</sub> films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation （E） is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature.展开更多
文摘Preparation of TiO<sub>2</sub> thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO<sub>2</sub> films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation （E） is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature.
