Improved transient electroluminescence technique based on time-correlated single-photon counting technology to evaluate organic mobility

The transient electroluminescence(EL)technique is widely used to evaluate the carrier mobility in the field of organic light emitting diodes.The traditional analog detection strategy using oscilloscopes is generally limited since the background noise causes an underestimation of the mobility value.In this paper,we utilize time-correlated single-photon counting(TCSPC)to probe the transient EL for mobility calculation.The measurements on tris(8-hydroxyquinoline)aluminum(Alq3)show that the electron mobilities obtained using the TCSPC technique are slightly higher than those obtained from the analog method at all the investigated voltages.Moreover,the TCSPC mobilities demonstrate weaker dependence on the root of electrical field compared to the oscilloscope mobilities.These improvements are attributed to the unique principle of TCSPC,which quantifies the EL intensity by counting the number of single-photon pulses,improving its single-photon sensitivity and elimi-nating the negative impacts of electrical noise.These advantages make TCSPC a powerful technique in the characterization of time-resolved electroluminescence.

Dark count in single-photon avalanche diodes:A novel statistical behavioral model

Dark count is one of the inherent noise types in single-photon diodes,which may restrict the performances of detectors based on these diodes.To formulate better designs for peripheral circuits of such diodes,an accurate statistical behavioral model of dark current must be established.Research has shown that there are four main mechanisms that contribute to the dark count in single-photon avalanche diodes.However,in the existing dark count models only three models have been considered,thus leading to inaccuracies in these models.To resolve these shortcomings,the dark current caused by carrier diffusion in the neutral region is deduced by multiplying the carrier detection probability with the carrier particle current at the boundary of the depletion layer.Thus,a comprehensive dark current model is constructed by adding the dark current caused by carrier diffusion to the dark current caused by the other three mechanisms.To the best of our knowledge,this is the first dark count simulation model into which incorporated simultaneously are the thermal generation,trap-assisted tunneling,band-to-band tunneling mechanisms,and carrier diffusion in neutral regions to evaluate dark count behavior.The comparison between the measured data and the simulation results from the models shows that the proposed model is more accurate than other existing models,and the maximum of accuracy increases up to 31.48%when excess bias voltage equals 3.5 V and temperature is 50℃.

Fiber coupled high count-rate single-photon generated from InAs quantum dots

In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to improve their light emission extraction in the vertical direction,thereby enhancing the optical SM fiber’s collection capabil-ity(numerical aperture:0.13).By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode(Q~1800),we achieve a fiber-output single-photon count rate as high as 4.73×10^(6) counts per second,with the second-order auto-correlation g2(0)remaining at 0.08.

Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was investigated.TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μm.It is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias voltage.Although the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring region.By comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise performance.Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

Ultra-low power anti-crosstalk collision avoidance light detection and ranging using chaotic pulse position modulation approach

A novel concept of collision avoidance single-photon light detection and ranging（LIDAR） for vehicles has been demonstrated, in which chaotic pulse position modulation is applied on the transmitted laser pulses for robust anti-crosstalk purposes. Besides, single-photon detectors（SPD） and time correlated single photon counting techniques are adapted, to sense the ultra-low power used for the consideration of compact structure and eye safety. Parameters including pulse rate, discrimination threshold, and number of accumulated pulses have been thoroughly analyzed based on the detection requirements, resulting in specified receiver operating characteristics curves. Both simulation and indoor experiments were performed to verify the excellent anti-crosstalk capability of the presented collision avoidance LIDAR despite ultra-low transmitting power.

Degree of fourth-order coherence by double Hanbury Brown—Twiss detections

Photon quantum statistics of light can be shown by the high-order coherence. The fourth-order coherences of various quantum states including Fock states, coherent states, thermal states and squeezed vacuum states are investigated based on a double Hanbury Brown Twiss （HBT） scheme. The analytical results are obtained by taking the overall efficiency and background into account.

Terpyridine-derived Zn^(2+) Selective Fluorescence Sensor: Ratiometric Fluoroionophoric Behavior Study

A sensitive and selective zinc ion ratiometric fluorescence sensor has been synthesized and characterized. This material displays dual fluorescence. After the material was bonded to a closed-shell metal ion, such as Zn2＋, the recovery of the local excited fluorescence of the material-Zn2＋ complex, largely at the expense of the intramolecular charge transfer fluorescence, is consistent with the difference between selected orbital transitions of the free dye and the metal-chelated complex. For instance, the contribution of the πtpy→πtpy, transition becomes more prominent. This is also consistent with the results of the fluorescence decay behavior, measured via a time-correlated single photon counting setup. In contrast, the corresponding open shell Ni2＋ -bound complex quenches both kinds of photoluminescence, due to spin-orbit coupling.

Fast fluorescence lifetime imaging techniques:A review on challenge and development

Fluorescence lifetime imaging microscopy(FLIM)is increasingly used in biomedicine,material science,chemistry,and other related research fields,because of its advantages of high specificity and sensitivity in monitoring cellular microenvironments,studying interaction between proteins,metabolic state,screening drugs and analyzing their efficacy,characterizing novel materials,and diagnosing early cancers.Understandably,there is a large interest in obtaining FLIM data within an acquisition time as short as possible.Consequently,there is currently a technology that advances towards faster and faster FLIM recording.However,the maximum speed of a recording technique is only part of the problerm.The acquisition time of a FLIM image is a complex function of many factors.These include the photon rate that can be obtained from the sample,the amount of information a technique extracts from the decay functions,the fficiency at which it determines fluorescence decay parameters from the recorded photons,the demands for the accuracy of these parameters,the number of pixels,and the lateral and axial resolutions that are obtained in biological materials.Starting from a discussion of the parameters which determine the acquisition time,this review will describe existing and emerging FLIM techniques and data analysis algo-rithms,and analyze their performance and recording speed in biological and biomedical applications.

Geometric origin of intrinsic dark counts in superconducting nanowire single-photon detectors

The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical SNSPDs.We herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout method.For these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'widths.With respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.

Fluorescence lifetime measurement from a designated single-bunch in the BEPCⅡ colliding mode

Fluorescence lifetime measurement in the time domain requires excitation from a well separated single bunch using synchrotron light sources. In the colliding mode of the Beijing Electron Positron Collider Ⅱ （BEPCⅡ）, a hybrid filling pattern was realized such that a single bunch was placed in the middle of a large gap between two multi-bunch groups. Detection of fluorescence lifetime, based on the excitation of the light pulse from this designated single-bunch, was established at Beamline 4B8 of the Beijing Synchrotron Radiation Facility （BSRF）. The timing signal of the BEPCII was utilized as a trigger to gate this fluorescence event. L-Tryptophan amino acid, a known lifetime standard, was selected to assess the lifetime measurement performance. The measured lifetime was consistent in both colliding and single-bunch mode with the time resolution down to 450 ps. Moreover, both the bunch purity and the fine structure of the hybrid filling pattern were characterized.

Resolution and contrast enhancement of laser-scanning multiphoton microscopy using thulium-doped upconversion nanoparticles

High-contrast optical imagi ng is achievable using phosphoresce nt labels to suppress the short-lived background due to the optical backscatterand autofluoresce nee.However,the long-lived phosphorescence is generally incompatible with high-speed laser-scan ning imaging modalities.Here,we show that upc on versi on nan oparticles of structure NaYF4:Yb co-doped with 8%Tm(8T-UCNP)in combi nation with a commerciallaser-scanning multiphoton microscopy are uniquely suited for labeling biological systems to acquire high-resolution images with the enhancedcon trast.In comparison with many phosphoresce nt labels,the 8T-UCNP emission lifetime of-15μs affords rapid image acquisition.Thehigh-order optical nonlinearity of the 8T-UCNP(n=4,as confirmed experimentally and theoretically)afforded pushing the resolution limitattain able with UCNPs to the diffraction-limit.The contrast enha nceme nt was achieved by suppressing the backgro und using(i)ban dpassspectral filtering of the narrow emission peak of 8T-UCNP at 455-nm,and(ii)time-gating implemented with a time-correlated single-photon counting system that demonstrated the contrast enhancement of>2.5-fold of polyethyle neimine-coated 8T-UCNPs take n up by huma nbreast adeno carcinoma cells SK-BR-3.As a result,discrete 8T-UCNP nan oparticles became clearly observable in the freshly excised splee ntissue of laboratory mice 15-min post in trave nous injectio n of an 8T-UCNP solution.The dem on strated approach paves the way forhigh-contrast,high-resoluti on,and high-speed multiphot on microscopy in challe nging envir onments of i ntense autofluorescence,exogenous staining,and turbidity,as typically occur in intravital imaging.