Efficient Slew-Rate Enhanced Operational Transconductance Amplifier

Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.

DOCCII-based electronically tunable current-mode biquadratic filters

A complete state variable current-mode biquadratic filter built by duo-output CCII (DOCCII) with variable current gain is presented. All the coefficients of the filter can be independently tuned through the variable current gain factors of the DOCCII. Based on the principles upon which the general biquadratic filter was constructed, a universal electronically tunable current-mode filter is proposed which implements the low-pass, high-pass, band-pass, band-suppress and all-pass second order transfer functions simultaneously. The PSPICE simulations of frequency responses of second-order filter of are also given.

CMOS Realization of VDVTA and OTA Based Fully Electronically Tunable First Order All Pass Filter with Optimum Linearity at Low Supply Voltage ±0.85 V

This paper presents a new first order all pass filter configurations. The proposed all pass filter configuration employs two configurations namely VDVTA and OTAs based first order all pass filter configuration. The first proposed configuration employs a single VDVTA and one grounded capacitor whereas the second proposed configuration employs two OTAs and one grounded capacitor. Both types of proposed configurations are fully electronically tunable and their quality factors do not depend on tunable pole frequency range. The reported configurations yield low active and passive sensitivities and also have low power consumption with very low supply voltage ± 0.85 V with Bias Voltage ± 0.50 V. The PSPICE simulation of the proposed VDVTA and two OTAs based first order all pass filter configurations are verified using 0.18 μm CMOS Technology Process Parameters.

New Single Input Multiple Output Type Current Mode Biquad Filter Using OTAs

This paper presents a new current mode (CM) single-input and multi-output (SIMO)-type biquad using two multiple output OTAs and one current follower as an active device and having two grounded capacitors. This SIMO type circuit realizes all the five filter functions as low pass, band pass, high pass, band reject and all pass filter transfer functions simultaneously. This circuit has the unity gain transfer function for all the five types of filters. The circuit enjoys electronic tunability of angular frequency and bandwidth. The 0.18 μm TSMC technology process parameters have been utilized to test and verify the performance characteristics of the circuit using PSPICE. The sensitivity analysis, transient response and calculations of total harmonic distortion have also been shown.

A Process Variation Tolerant OTA Design for Low Power ASIC Design

Technology development and continuous down scaling in CMOS fabrication makes Mixed Signal Integrated Circuits (MSIC) more vulnerable to process variation. This paper presents a well defined novel design methodology for process variability aware design by incorporating the major challenge of statistical circuit performance relating the device and circuit level variation in an accurate and efficient manner to improve the reliability, robustness and stability of the circuit. The device sensitive parameters are identified and accurately quantified by continuous realistic assessments using statistical methods. The modularity of the methodology can be validated by the output performance obtained from the gain and phase response of OTA which is highly stable when subjected to worst case process variation scenario. In the proposed optimization, the circuit is strengthened by fixing the optimum aspect ratio without adding any additional compensation devices complicating the circuit resulting in low power consumption of only 0.116 mW in standard CMOS 0.18 μm technology with 1.8 V power supply.

Research and design of a novel current mode charge pump

To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconductance amplifier.In the steady state,the input current from power voltage retains constant,so reducing the noise induced on the input voltage source and improving the output voltage ripple.The charge pump small-signal model is used to describe the device’s dynamic behavior and stability.Analytical predictions were verified by Hspice simulation and testing.Load driving is up to 800 mA with a power voltage of 3.6 V,and the output voltage ripple is less than 45 mV.The output response time is less than 8μs,and the load current jumps from 400 to 800 mA.

Digital 1 V 82 μW Pseudo-Two-Stage Class-AB OTA

A low power digital operational transconductance amplifier （OTA） was developed for low voltage switched capacitor applications. The OTA has a high slew rate （SR） and a large open loop gain with a dif- ferential pseudo-two-stage Class-AB structure. A fully compensated depletion mode capacitor is used in the switched capacitor common mode feedback block instead of a metal-insulator-metal （MIM） capacitor to reduce the fabrication cost. Simulations show that with a 1.0-V supply voltage and a 34-pF load at each output terminal, this digital differential pseudo-two-stage Class-AB OTA realized in 0.13-μm technology achieves a 63.5-dB DC gain and a 0.83-V output swing. The slew rate is ±16.29V/μs and the total power dissipation is only 82 μW.

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

A fully-differential switched-capacitor sample-and-hold （S/H） circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter （ADC） was designed and fabricated using a 0.35-μm CMOS process. Capacitor flip-around architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier （OTA） was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range （SFDR） of 67 dB and a signal-to-noise ratio （SNR） of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12mm^2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

A low-noise widely tunable Gm-C filter with frequency calibration

A fourth-order Gm-C Chebyshev low-pass filter is presented as channel selection filter for reconfigurable multi-mode wireless receivers. Low-noise technologies are proposed in optimizing the noise characteristics of both the Gm cells and the filter topology. A frequency tuning strategy is used by tuning both the transconductance of the Gm cells and the capacitance of the capacitor banks. To achieve accurate cut-off frequencies, an on-chip calibration circuit is presented to compensate for the frequency inaccuracy introduced by process variation. The filter is fabricated in a 0.13 m CMOS process. It exhibits a wide programmable bandwidth from 322.5 k Hz to20 MHz. Measured results show that the filter has low input referred noise of 5.9 n V/（Hz）^（1/2） and high out-of-band IIP3 of 16.2 d Bm. It consumes 4.2 and 9.5 m W from a 1 V power supply at its lowest and highest cut-off frequencies respectively.