Mitigation of Transients in Capacitor Coupled Substations Using Traditional RLC Filter Techniques

This article presents an extensive examination and modeling of Capacitor Coupled Substations (CCS), noting some of their inherent constraints. The underlying implementation of a CCS is to supply electricity directly from high-voltage (HV) transmission lines to low-voltage (LV) consumers through coupling capacitors and is said to be cost-effective as compared to conventional distribution networks. However, the functionality of such substations is susceptible to various transient phenomena, including ferroresonance and overvoltage occurrences. To address these challenges, the study uses simulations to evaluate the effectiveness of conventional resistor-inductor-capacitor (RLC) filter in mitigating hazardous overvoltage resulting from transients. The proposed methodology entails using standard RLC filter to suppress transients and its associated overvoltage risks. Through a series of MATLAB/Simulink simulations, the research emphasizes the practical effectiveness of this technique. The study examines the impact of transients under varied operational scenarios, including no-load switching conditions, temporary short-circuits, and load on/off events. The primary aim of the article is to assess the viability of using an established technology to manage system instabilities upon the energization of a CCS under no-load circumstances or in case of a short-circuit fault occurring on the primary side of the CCS distribution transformer. The findings underscore the effectiveness of conventional RLC filters in suppressing transients induced by the CCS no-load switching.

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.

THE THEORY OF CURRENT TRANSIENTS AT TUBULAR ELECTRODES IN A FLOWING FLUID

A theoretical equation is developed which describes the response of the current transients to a constant potential at tubular electrodes for a reversible electrode reaction in the flowing fluid.

The Analysis of the Differences between Electromechanical Transients Simulation and Electromagnetic Transients Simulation

The paper firstly interprets the differences between electromechanical transients program BPA and electromagnetic transients program EMTDC in the field of principle, model and algorithm. Then the authors carry out the simulation based on single-machine infinite-bus system and draw some conclusions. The time consumption of the simulation using EMTDC is much longer than the simulation using BPA under the same length of time. The results of BPA are close to those of EMTDC under steady conditions. The fundamental frequency component of the EMTDC results seems closer to the BPA results than its original value, but they still away from completely consistent. In this simulation of single-machine infinite-bus system, the transient stability results of BPA and EMTDC are close, but the results of BPA are apt to be more conservative. All the conclusions above have a certain reference value to both hybrid simulation and comprehensive analysis method in the study of the AC/DC digital simulation of large power grid.

Operation of the jet feedback mechanism (JFM) in intermediate luminosity optical transients (ILOTs)

We follow the premise that most intermediate luminosity optical transients （ILOTs） are powered by rapid mass accretion onto a main sequence star, and study the effects of jets launched by an accretion disk. The disk is formed due to large specific angular momentum of the accreted mass. The two opposite jets might expel some of the mass from the reservoir of gas that feeds the disk, and therefore reduce and shorten the mass accretion process. We argue that by this process ILOTs limit their luminosity and might even shut themselves off in this negative jet feedback mechanism （JFM）. The group of ILOTs is a new member of a large family of astrophysical objects whose activity is regulated by the operation of the JFM.

Could bright γ-ray burst optical transients have been recorded historically?

The brightest optical flash from a γ-ray burst （GRB） was, briefly, a naked- eye object. Several other GRBs have produced optical transients only slightly fainter. We argue that, based upon the recently accumulated data from hundreds of GRB transients, many such optical events should have been visible to the unaided eye in the course of human history. The most likely repositories of such observations are histor- ical records from the Orient, and we have located and discuss a number of candidates. We also consider the value of such observations, should any very likely ones be uncovered, to modern astrophysics.

Hyper Gravity-Induced Transients in <i>Phycomyces</i>as Measured by Single Beam Spectrophotometer on the Sounding Rocket TEXUS 50

In the first paper of two referring to the TEXUS 50 campaign using micro dual wavelength spectrometers (MDWS) we kinetically determined the threshold1 for GIACs (gravity-induced absorption changes) in Phycomyces to be lower than 25 × 10&minus;3 g (http://file.scirp.org/pdf/JMP_2015082810060783.pdf). In this second paper, we attended measurement of GIAC-spectra. Unexpectedly, during the upwards movement, i.e. the hypergravity phase up to top acceleration values reaching 11.6 g at 35.4 s after liftoff we observed transient GIAC-spectra ranging from 380 to 750 nm. In addition, during the whole acceleration phase of 68.2 s, another component near 700 nm develops which remains stable during the whole “free fall trajectory parabola” for 381.3 s. The subsequent reentry of the rocket leads to extraordinary deceleration values up 37.8 g, completely destroying Phycomyces sporangiophores excluding their spectral measurement. During the microgravity phase and by centrifuge operation we were unable to detect any GIAC-spectra (in contrast to kinetic MDWS-measurements, first paper).

Energization of a Half-Wavelength Transmission Line-Pre-Operational Transients Studies

In the present paper the main results of the pre-operational studies related to the energization maneuver of a Half-Wavelength Transmission Line (AC-Link), are presented. The simulations were performed in PSCAD with actual Brazilian system data. Specifically the following studies were performed: electromagnetic transient studies of energization maneuver considering no fault and the occurrence of fault along the trunk;dynamic analysis of generator units that will energize the AC-Link;TRV on the circuit-breaker that will energize the trunk. The main conclusion is that the AC-Link energization experiment can be implemented without jeopardizing or causing time-life reduction of the equipment involved in the experiment, which comprises the generator unit that will energize the trunk, the step-up transformer, the arresters that will be kept during the experiments, as well as the circuit-breaker that will energize and then trip the AC-Link.

Numerical Analysis for Transients in External Source Driven Reactors

The main purpose of this paper is to perform a numerical analysis of the Neutron Spatial Kinetic Equations, subject to transients of the External Neutron Source, by applying the Implicit Euler Method as well as the Runge-Kutta Method in order to check which methods are best applicable in transients caused by External Neutron Source. For this purpose, a one-dimensional ADS reactor with a constant external source was simulated based on the geometry of ANL-BSS-6 reactor for benchmark effects.

CHAOTIC TRANSIENTS IN A CURVED FLUID CONVEYING TUBE

The chaotic transients of a curved fluid conveying tube subjected to a nonlinear foundation are investigated. The assumption of the inextensibility of the tube is applied to derive the nonlinear differential equation of motion via the Newtonian approach, with the differential quadrature method used to discretize the curved tube model in the spatial domain. And the nonlinear dynamic motion equation is obtained. The numerical analysis shows that, the final steady states are sensitive to the initial system conditions in a large parameter region of the fluid speed. This phenomenon of chaotic transients is infrequent for fluid conveying tubes.

DOUBLE METHOD OF CHARACTERISTICS TO ANALYZE HYDRAULIC-THERMAL TRANSIENTS OF PIPELINE FLOW

The hydraulic and thermal transients in pipeline flow were studied. The method of characteristics for hydraulic transient analysis of batch transport of pipeline flow had been improved. The thermal transient equation, in which the term with v 3 was involved, had been inferred, while the corresponding method of characteristics was constructed. The double method of characteristics, which can be used to study the coherent hydraulic-thermal transients of batch transport of pipeline flow, was developed.

CALCULATION ON TWO-PHASE FLOW TRANSIENTS AND THEIR EXPERIMENTAL RESEARCH

From basic equations of gas-liquid, solid-liquid, solid-gas two-phase flow,the calculating method on flow transients of two-phase flow is developed by means of characteristicmethod. As one example, a gas-liquid flow transient is calculated and it agrees well with theexperimental result. It is shown that the method is satisfactory for engineering demand.

Attenuation analysis of hydraulic transients with laminar-turbulent flow alternations

An improved compound mathematical model is established to simulate the attenuation of hydraulic transients with laminar-turbulent alternations,which usually occur when the pipeline flow velocity fluctuates near the critical velocity.The laminar friction resistance and the turbulent friction resistance are considered respectively in this model by applying different resistance schemes to the characteristics method of fluid transient analysis.The hydraulic transients of the valve closing process are simulated using the model.A more reasonable attenuation of hydraulic transients is obtained.The accurate attenuation is more distinct than that obtained from the traditional mathematical model.The research shows that the hydraulic transient is a type of energy waves,and its attenuation is caused by the friction resistance.The laminar friction resistance is more important than the turbulent friction resistance if the flow velocity is smaller than the critical velocity.Otherwise the turbulent friction resistance is more important.The laminar friction resistance is important in the attenuation of hydraulic transients for the closing process.Thus,it is significant to consider the different resistances separately to obtain more accurate attenuation of hydraulic transients.

STUDY OF TRANSIENTS IN DIFFUSION PROCESS

The transient behaviour in approaching to equilibrium for a diffusion system is described by means of Fokker-Planck equation and particular attention is paid to the overshooting of probability current at high temperatures.

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.

Power System Transients Analysis by Wavelet Transforms

In contrast to Fourier transform, wavelet transform is especially suitable for transient analysis because of its time frequency characteristics with automatically adjusted window lengths. Research shows that wavelet transform is one of the most powerful tools for power system transient analysis. The basic ideas of wavelet transform are presented in the paper together with several power system applications. It is clear that wavelet transform has some clear advantages over other transforms in detecting, analyzing, and identifying various types of power system transients.

The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.