A ten-fold coordinated high-pressure structure in hafnium dihydrogen with increasing superconducting transition temperature induced by enhancive pressure

High pressure is an effective method to induce structural and electronic changes,creating novel high-pressure structures with excellent physical and chemical properties.Herein,we investigate the structural phase transition of hafnium dihydrogen(HfH2)in a pressure range of 0 GPa-500 GPa through the first-principles calculations and the crystal structure analysis by particle swarm optimization(CALYPSO)code.The high-pressure phase transition sequence of HfH2is I4/mmm→Cmma→P-3m1 and the two phase transition pressure points are 220.21 GPa and 359.18 GPa,respectively.A newly trigonal P-3m1 structure with 10-fold coordination first appears as an energy superior structure under high pressure.These three structures are all metallic with the internal ionic bonding of Hf and H atoms.Moreover,the superconducting transition temperature(Tc)values of Cmma at 300 GPa and P-3m1 at 500 GPa are 3.439 K and 19.737 K,respectively.Interestingly,the superconducting transition temperature of the P-3m1 structure presents an upward trend with the pressure rising,which can be attributed to the increase of electron-phonon coupling caused by the enhanced Hf-d electronic density of states at Fermi level under high pressure.

QSPR Study on the Glass Transition Temperature of Polyacrylates

Structural parameters of 22 polyacrylic compounds were computed at two levels using Hartree-Fock and DFT methods. Based on the experimental data of glass transition temperature （Tg）, four-parameter （energy of the lowest unoccupied molecular orbital （ELoMO）, the highest positive charge （Qmax^＋）, dipole moments（μ） and the next highest occupied molecular orbital （ENLOMO）） dependent equations were developed using structural parameters as theoretical descriptors. Especially, Tg dependent equation calculated at the HF/6-31G（d） level is more advantageous than others in view of their correlation and predictive abilities. This dependent equation was validated by variance inflation factors （VIF） and t-test methods.

Effects of heat treatment conditions and Y-doping on structure and phase transition temperature of VO2 powders

The VO2 powders were prepared by hydrothermal synthesis.The effects of heat treatment conditions and Y-doping on the structure and phase transition temperature of VO2 were studied.The XRD,SEM and TEM results show that the heat treatment temperature has a significant effect on the crystal transformation of VO2 precursor.Increasing temperature is conducive to the transformation of precursor VO2(B)to ultrafine VO2(M).The Y-doping affects the structure of VO2.Y^3+can occupy the lattice position of V4+to form YVO4 solid solution,which can increase the cell parameters of VO2.Due to the lattice deformation caused by Y-doping,the aggregation of particles is prevented,and the grain is refined obviously.DSC curves show that Y-doping can reduce the phase transition temperature of VO2(M).After adding 9 at.%Y,the phase transition temperature can be reduced from 68.3 to 61.3℃.

Fabrication and characterization of SmO_(0.7)F_(0.2)FeAs bulk with a transition temperature of 56.5 K

The superconductivity of iron-based superconductor SmO 0.7 F 0.2 FeAs was investigated. The SmO 0.7 F 0.2 FeAs sample was prepared by the two-step solid-state reaction method. The onset resistivity transition temperature is as high as 56.5 K. X-ray diffraction （XRD） results show that the lattice parameters a and c are 0.39261 and 0.84751 nm, respectively. Furthermore, the global J c was more than 2.3 × 10 5 A/cm 2 at T = 10 K and H = 9 T, which was calculated by the formula of J c = 20ΔM/[a（1-a/（3b））]. The upper critical fields, H c2 ≈ 256 T （T = 0 K）, was determined according to the Werthamer-Helfand-Hohenberg formula, indicating that the SmO 0.7 F 0.2 FeAs was a superconductor with a very promising application.

CHARACTERISTIC TRANSITION TEMPERATURE OF BRITTLENESS OF LOW CARBON STEEL

On the basis of analysis of low carbon steel fracture macro-features and micro-processes at low temperature,the definition was given of the characteristic transition temperature of brittleness,T_(pm),and its physical meaning was expounded.Discussion was carried out of phys- ical characteristic of variation at T_(pm) in respect of the fracture toughness and property of crack arrest.In addition,research was made on the application of T_(pm),which can give infor- mation about the transition of the fracture toughness,the property of crack arrest and critical crack size,to estimation the brittleness of low carbon steel at low temperatures.

EFFECT OF DUCTILE-BRITYLE TRANSITION TEMPERATURE OF Al-Si COATING ON FATIGUE PROPERTIES OF Ni-BASE SUPERALLOYS

The effect of Al content on the ductile-brittle transition temperature of Al-Si coating and the effect of fracture behaviour.of the Al-Si coating on the fatigue properties of Ni-base superallovs have been investigated to propose the theoretical basis of search for an optimum of mechanical properties of the high temperature coating on Ni-base alloys.

POLYMER CHAIN DIFFUSION AT A TEMPERATURE BELOW ITS BULK GLASS TRANSITION TEMPERATURE

In this study, it was examined whether the dynamics of polymer chains at a surface is different from that in thebulk, and if so, to what extent they differ in terms of surface glass transition temperature and diffusion coefficient. Obtainedresults clearly indicate that surface chains can travel for a relatively large distance in comparison with the characteristiclength scale of usual segmental motion even at a temperature below its bulk glass transition temperature, T_g^b. This isconsistent with our previous results that the surface glass transition temperature is much lower than the corresponding T_g^b.Also, it was experimentally revealed that there was a gradient of molecular motion in the surface region.

Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field.The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy.This is useful for future quantum information processing by single dopant atoms in silicon.

Functional Integral Approach to Transition Temperature of a Homogeneous ImperfectBose Gas

A functional integral approach (FIA) is introduced to calculate the transition temperature of a uniform imperfect Bose gas. With this approach we find that the transition temperature is higher than that of the corresponding ideal gas. We obtain the expression of the transition temperature shift as , where n is the density of particle number and a is the scattering length. The result has never been reported in the literature.

Effects of C60 on the Glass Transition Temperature of Carbazole-based Photorefractive Polyphosphazenes

The bi-functional carbazole-based photorefractive polyphosphazenes with different content of C_（60）-doped were fabricated. The glass transition temperature（T_g） of these polymer composite materials was determined using a differential scanning calorimetric（DSC） method. According to the DSC measurement results with different heating rates, the variation of T_g and the active energy of glass transition（E_g） were analyzed in detail. The analysis results indicate that the transition region shifts to higher temperatures with increasing heating rate, and C_（60） content（below 1.0 wt%） can influence the T_g of photorefractive polyphosphazenes. The T_g first increases and then decreases with the C_（60） content（below 1.0 wt%）. The probable causes of the influence of C_（60） on T_g was proposed.

Creep performance of PVC aged at temperature relatively close to glass transition temperature

In order to predict the mechanical performance of the polyvinyl chloride （PVC） at a high operating temperature, a series of short-term tensile creep tests （one- tenth of the physical aging time） of the PVC are carried out at 63 ℃ with a small constant stress by a dynamic mechanical analyzer （DMA）. The Struik-Kohlrausch （SK） formula and Struik shifting methods are used to describe these creep data for various physical aging time. A new phenomenological model based on the multiple relaxation mechanisms of an amorphous polymer is developed to quantitatively characterize the SK parameters （the initial creep compliance, the characteristic retardation time, and the shape factor） determined by the aging time. It is shown that the momentary creep compliance curve of the PVC at 63℃ can be very well fitted by the SK formula for each aging time. However, the SK parameters for the creep curves are not constant during the aging process at the elevated temperatures, and the evolution of these parameters and the creep rate versus aging time curves at the double logarithmic coordinafes have shown a nonlinear phenomenon. Moreover, the creep master curves obtained by the superposition with the Struik shifting methods are unsatisfactory in such a case. Finally, the predicted results calculated from the present model incorporating with the SK formula are in excellent agreement with the creep experimental data for the PVC isothermally aged at the temperature relatively close to the glass transition temperature.

Prediction of Glass Transition Temperatures of Polyarylates Using a Support Vector Machine Model

A three-descriptor quantitative structure-property relationship （QSPR） model, based on the support vector machine （SVM） algorithm, was constructed to predict the glass transition temperatures （Tgs） ofpolyarylates with complex structures. A total of 50 polyarylates were randomly divided into three sets, viz., the training set （30 polymers）, validation set （10 polymers） and prediction set （10 polymers）. By adjusting various parameters by trial and error, the final optimum SVM model based on Austin Model 1 （AM1） calculation is a polynomial kernel with the parameters C of 100, ε of 1.00E-05 and d of 2. The root-mean-square （RMS） errors obtained from the training set, validation set and prediction set are 19.4, 12.8 and 15.5 K, respectively. Research results show that the proposed SVM model has better statistical quality than the previous models. Thus, applying the SVM algorithm to predict Tgs of polymers is feasible.

A NEURAL NETWORK STUDY ON GLASS TRANSITION TEMPERATURE OF POLYMERS

In this paper, an artificial neural network model is adopted to study the glass transition temperature of polymers. In our artificial neural networks, the input nodes are the characteristic ratio C-infinity, the average molecular weight M-e between entanglement points and the molecular weight M-mon of repeating unit. The output node is the glass transition temperature T-g, and the number of the hidden layer is 6. We found that the artificial neural network simulations are accurate in predicting the outcome for polymers for which it is not trained. The maximum relative error for predicting of the glass transition temperature is 3.47%, and the overall average error is only 2.27%. Artificial neural networks may provide some new ideas to investigate other properties of the polymers.

Degradation Mechanism of the Superconducting Transition Temperature in Nb Thin Films

Systemic measurements show that there is no 3D to 2D crossover in the reduction of the superconducting transition temperature Tc in Nb thin films. This result is consistent with all previous measurements while it is contrary to the prevailing understanding based on the interplay between proximity, localization, and lifetime broadening. Our study indicates that the decrease of Tc can be interpreted by the combined effects of electron-phonon coupling parameter λ and the defect scattering rate pw, being uniquely determined by their ratio λ/ρw. Other factors such as film thickness and irradiation do not produce additional effects beyond these two parameters.

Frequency Switches at Transition Temperature in Voltage-Gated Ion Channel Dynamics of Neural Oscillators

Understanding of the mechanisms of neural phase transitions is crucial for clarifying cognitive processes in the brain. We investigate a neural oscillator that undergoes different bifurcation transitions from the big saddle homoclinic orbit type to the saddle node on an invariant circle type, and the saddle node on an invariant circle type to the small saddle homoclinic orbit type. The bifurcation transitions are accompanied by an increase in thermodynamic temperature that affects the voltage-gated ion channel in the neural oscillator. We show that nonlinear and thermodynamical mechanisms are responsible for different switches of the frequency in the neural oscillator. We report a dynamical role of the phase response curve in switches of the frequency, in terms of slopes of frequency-temperature curve at each bifurcation transition. Adopting the transition state theory of voltagegated ion channel dynamics, we confirm that switches of the frequency occur in the first-order phase transition temperature states and exhibit different features of their potential energy derivatives in the ion channel. Each bifurcation transition also creates a discontinuity in the Arrhenius plot used to compute the time constant of the ion channel.

Phase Transition Temperature of HPT(2,3,6,7,10,11-hexa-n-pentyloxytriphenylene) from Molecule Dynamic Simulation

Molecule dynamics simulation was used on HPT(2,3,6,7,10,11-hexa-n-pentyloxytriphenylene), which is a discotic Liquid crystal. From analyzing the energy and displacement varying with the temperature, the phase transition temperature of PM6MPP can be predicted. The deviations of T-g, T-m and T-i due to the MD time scale are small enough that it should be possibly used to predict the material properties especially when more powerful computers are available.

Microstructure Evolution of Heat‑Affected Zone in Submerged Arc Welding and Laser Hybrid Welding of 690 MPa High Strength Steel and its Relationship with Ductile–Brittle Transition Temperature

The comparative study of submerged arc welding(SAW)and laser hybrid welding(LHW)was carried out for a 690 MPa high strength steel with thickness of 20 mm.Microstructure and ductile–brittle transition temperature(DBTT)evolution in welded zone were elucidated from the aspect of crystallographic structure,particularly,digitization and visualization of 24 variants.The impact toughness of each micro zone in LHW joint is better than that of SAW,in which the DBTT of equivalent fusion line and heat-affected zone(HAZ)can reach−70 and−80℃,while that of SAW is only−50℃.LHW technology induces narrowing of the HAZ and refining of the microstructure obtained in weld metal and HAZ.Meanwhile,the austenite grain size and transformation driving force in the coarse grained heat-affected zone(CGHAZ)are reduced and increased,respectively.It makes variant selection mechanism occurring in CGHAZ of LHW dominate by close-packed plane grouping,which promotes lath bainite formation with high density of high angle grain boundary,especially block boundary dominated by V1/V2 pair.While for SAW,the lower transformation driving force inferred from the large amount of retained austenite in CGHAZ induces Bain grouping of variants,and thus triggers the brittle crack propagating straightly in granular bainite,resulting in lower impact toughness and higher DBTT.

Improving phase transition temperature of VO_(2) via Ge doping:a combined experimental and theoretical study

Enhancing the semiconductor-metal phase transition temperature(TSMT)of VO_(2) is of great consequence for further exploring the potential applications of VO_(2) at elevated temperatures.In this study,Ge^(4+)-doped VO_(2)(Ge_(x)V_(1-x)O_(2))samples were prepared by the hydrothermal and annealing approach.X-ray diffraction(XRD),high-resolution transmission electron microscopy(HRTEM),differential scanning calorimetry(DSC)and resistivity-temperature(R-T)analyses were used to investigate the influence of Ge doping on the lattice structures and phase transition properties of Ge_(x)V_(1-x)O_(2) samples.We found that the lattice parameter of Ge_(x)V_(1-x)O_(2) decreased with the Ge concentration increasing from 2 at%to 18 at%,which was further supported by density functional theory(DFT)-based first-principle simulations.TSMT firstly increased from 64.5 to 73.0℃ at 8 at% Ge and then decreased to 71.5℃ at higher Ge concentration.Furthermore,DFT analysis revealed that the impact of lattice distortion induced by Ge doping rather than the changes in electronic structure is more pronounced on modulating TSMT of Ge_(x)V_(1-x)O_(2).The present work has pointed out the direction that the TSMT could be enhanced and illustrated the physical reason behind the regulation of TSMT in ionsdoped VO_(2) systems.

Relationship between the parent charge transfer gap and maximum transition temperature in cuprates

One of the biggest puzzles concerning the cup- rate high temperature superconductors is what determines the maximum transition temperature （Tc,max）, which varies from less than 30 to above 130 K in different compounds. Despite this dramatic variation, a robust trend is that within each family, the double-layer compound always has higher Tc,max than the single-layer counterpart. Here we use scanning tunneling microscopy to investigate the electronic structure of four cuprate parent compounds belonging to two different families. We find that within each family, the double layer compound has a much smaller charge transfer gap size （ACT）, indicating a clear anticorrelation between AcT and Tc,max. These results suggest that the charge transfer gap plays a key role in the superconducting physics of cuprates, which shed important new light on the high To mechanism from doped Mott insulator perspective.