Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip...Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip-flop)using a transmission gate.To accomplish a power-efficient pulsed D flip-flop,clock gating is proposed.The gated clock reduces the unnecessary switching of the transistors in the circuit and thus reduces the dynamic power consumption.The clock gating approach is employed by using an AND gate to disrupt the clock input to the circuit as per the control signal called Enable.Due to this process,the clock gets turned off to reduce power consumption when there is no change in the output.The proposed transmission gate-based pulsed D flip-flop’s performance with clock gating and without clock gating circuit is analyzed.The proposed pulsed D flip-flop power consumption is 1.586μw less than the without clock gated flip-flop.Also,the authors have designed a 3-bit serial-in and parallel-out shift register using the proposed D flip-flop and analyzed the performance.Tanner Electronic Design Automation tool is used to simulate all the circuits with 45 nm technology.展开更多
First the research is conducted on the design of the two-phase sinusoidal power clock generator in this paper. Then the design of the new adiabatic logic circuit adopting the two-phase sinusoidal power clocks--Clocked...First the research is conducted on the design of the two-phase sinusoidal power clock generator in this paper. Then the design of the new adiabatic logic circuit adopting the two-phase sinusoidal power clocks--Clocked Transmission Gate Adiabatic Logic (CTGAL) circuit is presented. This circuit makes use of the clocked transmission gates to sample the input signals, then the output loads are charged and discharged in a fully adiabatic manner by using bootstrapped N-Channel Metal Oxide Semiconductor (NMOS) and Complementary Metal Oxide Semiconductor (CMOS) latch structure. Finally, with the parameters of Taiwan Semiconductor Manufacturing Company (TSMC) 0.25um CMOS device, the transient energy consumption of CTGAL, Bootstrap Charge-Recovery Logic (BCRL) and Pass-transistor Adiabatic Logic (PAL) including their clock generators is simulated. The simulation result indicates that CTGAL circuit has the characteristic of remarkably low energy consumption.展开更多
Using composite field arithmetic in Galois field can result in the compact Rijndael S-Box. However, the power con- sumption of this solution is too large to be used in resource-limited embedded systems. A full-custom ...Using composite field arithmetic in Galois field can result in the compact Rijndael S-Box. However, the power con- sumption of this solution is too large to be used in resource-limited embedded systems. A full-custom hardware implementation of composite field S-Box is proposed for these targeted domains in this paper. The minimization of power consumption is implemented by optimizing the architecture of the composite field S-Box and using the pass transmission gate (PTG) to realize the logic functions of S-Box. Power simulations were performed using the netlist extracted from the layout. HSPICE simulation results indicated that the proposed S-Box achieves low power consumption of about 130 μW at 10 MHz using 0.25 μm/2.5 V technology, while the consumptions of the positive polarity reed-muller (PPRM) based S-Box and composite field S-Box based on the conventional CMOS logic style are about 240 μW and 420 μW, respectively. The simulations also showed that the presented S-Box obtains better low-voltage operating property, which is clearly relevant for applications like sensor nodes, smart cards and radio frequency identification (RFID) tags.展开更多
Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded...Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded static random-access memory(SRAM)units are necessary components in fast mobile computing.Traditional SRAM cells are more energyconsuming and with lower performances.The major constraints in SRAM cells are their reliability and low power.The objectives of the proposed method are to provide a high read stability,low energy consumption,and better writing abilities.A transmission gate-based multi-threshold single-ended Schmitt trigger(ST)9T SRAM cell in a bit-interleaving structure without a write-back scheme is proposed.Herein,an ST inverter with a single bit-line design is used to attain the high read stability.A negative assist technique is applied to alter the trip voltage of the single-ended ST inverter.The multithreshold complementary metal oxide semiconductor(MTCMOS)technique is adopted to reduce the leakage power in the proposed single-ended TGST 9T SRAM cell.The proposed system uses a combination of standard and ST inverters,which results in a large read stability.Compared with the previous ST 9T,ST 11T,11T,10T,and 7T SRAM cells,the proposed cell is implemented in Cadence Virtuoso ADE with 45-nm CMOS technology and consumes 35.80%,42.09%,31.60%,12.54%,and 31.60%less energy for read operations and 73.59%,93.95%,92.76%,89.23%,and 85.78%less energy for write operations,respectively.展开更多
In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employe...In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employed in the 10 Transistor SRAM cell to reduce active power consumption during the write operation. Read access time and write access time are measured for proposed cell architecture based on Eldo SPICE simulation using TSMC based 90 nm Complementary Metal Oxide Semiconductor (CMOS) technology at various process corners. Leakage current measurements made on hold mode of operation show that proposed cell architecture is having 12.31 nano amperes as compared to 40.63 nano amperes of the standard 6 Transistor cell. 10 Transistor cell also has better performance in terms of leakage power as compared to 6 Transistor cell.展开更多
A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMIC 0.18 μm process used for a sample-and-hold amplifier (SHA)-less pipelined analog-to-digital ...A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMIC 0.18 μm process used for a sample-and-hold amplifier (SHA)-less pipelined analog-to-digital converters (ADC). Based on the analysis and optimization between delay time and offset, an enhanced reset architecture with transmission gate was introduced to speed up the comparison and reset procedure. Four inputs with two cross coupled differential pairs, reconstituted bias circuit for tail current transistor and common centroid layouts make the comparator more robust against mismatch and process variations. The simulation results demonstrate that the proposed design achieves 1 mV sensitivity at 2.2 GHz sampling rate with a power consumption of 510 μW, while the mean offset voltage is equal to 10.244 mV.展开更多
We present a new counter-based Wallace-tree(CBW)8×8 multiplier.The multiplier’s counters are implemented with a new hybrid full adder(FA)cell,which is based on the transmission gate(TG)technique.The proposed FA,...We present a new counter-based Wallace-tree(CBW)8×8 multiplier.The multiplier’s counters are implemented with a new hybrid full adder(FA)cell,which is based on the transmission gate(TG)technique.The proposed FA,TG-based AND gate,and hybrid half adder(HA)generate M:3(4≤M≤7)digital counters with the ability to save at least 50%area occupation.Simulations by 90 nm technology prove the superiority of the proposed FA and digital counters under different conditions over the state-of-the-art designs.By using the proposed cells,the CBW multiplier exhibits high driving capability,low power consumption,and high speed.The CBW multiplier has a 0.0147 mm^(2)die area in a pad.The post-layout extraction proves the accuracy of experimental implementation.An image blending mechanism is proposed,in which a direct interface between MATLAB and HSPICE is used to evaluate the presented CBW multiplier in image processing applications.The peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM)are calculated as image quality parameters,and the results confirm that the presented CBW multiplier can be used as an alternative to designs in the literature.展开更多
文摘Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip-flop)using a transmission gate.To accomplish a power-efficient pulsed D flip-flop,clock gating is proposed.The gated clock reduces the unnecessary switching of the transistors in the circuit and thus reduces the dynamic power consumption.The clock gating approach is employed by using an AND gate to disrupt the clock input to the circuit as per the control signal called Enable.Due to this process,the clock gets turned off to reduce power consumption when there is no change in the output.The proposed transmission gate-based pulsed D flip-flop’s performance with clock gating and without clock gating circuit is analyzed.The proposed pulsed D flip-flop power consumption is 1.586μw less than the without clock gated flip-flop.Also,the authors have designed a 3-bit serial-in and parallel-out shift register using the proposed D flip-flop and analyzed the performance.Tanner Electronic Design Automation tool is used to simulate all the circuits with 45 nm technology.
基金Supported by the National Natural Science Foundation of China (No. 60273093)the Natural Science Foundation of Zhejinag Province(No. Y104135) the Student Sci-entific Research Foundation of Ningbo university (No.C38).
文摘First the research is conducted on the design of the two-phase sinusoidal power clock generator in this paper. Then the design of the new adiabatic logic circuit adopting the two-phase sinusoidal power clocks--Clocked Transmission Gate Adiabatic Logic (CTGAL) circuit is presented. This circuit makes use of the clocked transmission gates to sample the input signals, then the output loads are charged and discharged in a fully adiabatic manner by using bootstrapped N-Channel Metal Oxide Semiconductor (NMOS) and Complementary Metal Oxide Semiconductor (CMOS) latch structure. Finally, with the parameters of Taiwan Semiconductor Manufacturing Company (TSMC) 0.25um CMOS device, the transient energy consumption of CTGAL, Bootstrap Charge-Recovery Logic (BCRL) and Pass-transistor Adiabatic Logic (PAL) including their clock generators is simulated. The simulation result indicates that CTGAL circuit has the characteristic of remarkably low energy consumption.
基金Project supported by the Hi-Tech Research and Development Program (863) of China (No. 2006AA01Z226)the Scientific Research Foundation of Huazhong University of Science and Technol-ogy (No. 2006Z001B), China
文摘Using composite field arithmetic in Galois field can result in the compact Rijndael S-Box. However, the power con- sumption of this solution is too large to be used in resource-limited embedded systems. A full-custom hardware implementation of composite field S-Box is proposed for these targeted domains in this paper. The minimization of power consumption is implemented by optimizing the architecture of the composite field S-Box and using the pass transmission gate (PTG) to realize the logic functions of S-Box. Power simulations were performed using the netlist extracted from the layout. HSPICE simulation results indicated that the proposed S-Box achieves low power consumption of about 130 μW at 10 MHz using 0.25 μm/2.5 V technology, while the consumptions of the positive polarity reed-muller (PPRM) based S-Box and composite field S-Box based on the conventional CMOS logic style are about 240 μW and 420 μW, respectively. The simulations also showed that the presented S-Box obtains better low-voltage operating property, which is clearly relevant for applications like sensor nodes, smart cards and radio frequency identification (RFID) tags.
文摘Considerable research has considered the design of low-power and high-speed devices.Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices.Embedded static random-access memory(SRAM)units are necessary components in fast mobile computing.Traditional SRAM cells are more energyconsuming and with lower performances.The major constraints in SRAM cells are their reliability and low power.The objectives of the proposed method are to provide a high read stability,low energy consumption,and better writing abilities.A transmission gate-based multi-threshold single-ended Schmitt trigger(ST)9T SRAM cell in a bit-interleaving structure without a write-back scheme is proposed.Herein,an ST inverter with a single bit-line design is used to attain the high read stability.A negative assist technique is applied to alter the trip voltage of the single-ended ST inverter.The multithreshold complementary metal oxide semiconductor(MTCMOS)technique is adopted to reduce the leakage power in the proposed single-ended TGST 9T SRAM cell.The proposed system uses a combination of standard and ST inverters,which results in a large read stability.Compared with the previous ST 9T,ST 11T,11T,10T,and 7T SRAM cells,the proposed cell is implemented in Cadence Virtuoso ADE with 45-nm CMOS technology and consumes 35.80%,42.09%,31.60%,12.54%,and 31.60%less energy for read operations and 73.59%,93.95%,92.76%,89.23%,and 85.78%less energy for write operations,respectively.
文摘In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employed in the 10 Transistor SRAM cell to reduce active power consumption during the write operation. Read access time and write access time are measured for proposed cell architecture based on Eldo SPICE simulation using TSMC based 90 nm Complementary Metal Oxide Semiconductor (CMOS) technology at various process corners. Leakage current measurements made on hold mode of operation show that proposed cell architecture is having 12.31 nano amperes as compared to 40.63 nano amperes of the standard 6 Transistor cell. 10 Transistor cell also has better performance in terms of leakage power as compared to 6 Transistor cell.
基金supported by the National Natural Science Foundation of China(Nos.61234002,61006028)the National High-Tech Program of China(Nos.2012AA012302,2013AA014103)the PhD Programs Foundation of Ministry of Education of China(No.20120203110017)
文摘A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMIC 0.18 μm process used for a sample-and-hold amplifier (SHA)-less pipelined analog-to-digital converters (ADC). Based on the analysis and optimization between delay time and offset, an enhanced reset architecture with transmission gate was introduced to speed up the comparison and reset procedure. Four inputs with two cross coupled differential pairs, reconstituted bias circuit for tail current transistor and common centroid layouts make the comparator more robust against mismatch and process variations. The simulation results demonstrate that the proposed design achieves 1 mV sensitivity at 2.2 GHz sampling rate with a power consumption of 510 μW, while the mean offset voltage is equal to 10.244 mV.
文摘We present a new counter-based Wallace-tree(CBW)8×8 multiplier.The multiplier’s counters are implemented with a new hybrid full adder(FA)cell,which is based on the transmission gate(TG)technique.The proposed FA,TG-based AND gate,and hybrid half adder(HA)generate M:3(4≤M≤7)digital counters with the ability to save at least 50%area occupation.Simulations by 90 nm technology prove the superiority of the proposed FA and digital counters under different conditions over the state-of-the-art designs.By using the proposed cells,the CBW multiplier exhibits high driving capability,low power consumption,and high speed.The CBW multiplier has a 0.0147 mm^(2)die area in a pad.The post-layout extraction proves the accuracy of experimental implementation.An image blending mechanism is proposed,in which a direct interface between MATLAB and HSPICE is used to evaluate the presented CBW multiplier in image processing applications.The peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM)are calculated as image quality parameters,and the results confirm that the presented CBW multiplier can be used as an alternative to designs in the literature.