Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has dras...Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.展开更多
Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upg...Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors(CID) were developed by RD39. The results show that CID detectors can be operated at the temperature of 100?200 K with much improved charge collection efficiency(CCE) as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.展开更多
针对中波红外辐射测量定标的需求,提出了将微型积分球与中红外探测器集成在低温环境中。验证比对了几种用于制作积分球内腔表面的材料样品,通过宽光谱反射率、特征光谱反射率、双向反射分布函数(bidirectional reflectance distribution...针对中波红外辐射测量定标的需求,提出了将微型积分球与中红外探测器集成在低温环境中。验证比对了几种用于制作积分球内腔表面的材料样品,通过宽光谱反射率、特征光谱反射率、双向反射分布函数(bidirectional reflectance distribution function,BRDF),以及用激光共聚焦显微镜、扫描电子显微镜(scanning electron microscope,SEM)等进行微观表面形貌的测量,获得了适用于制作中红外积分球的内腔表面制作工艺。BRDF测试结果显示,制作的内腔表面接近朗伯反射表面。测试了积分球探测器样品的光谱与电学性能,经过表面粗糙化处理并蒸镀金属反射膜,样品的光谱波段适应性好,光强衰减比为0.0674,经计算,积分球内腔壁的反射率为96.4%;同时,低温积分球的引入,使探测器芯片的噪声由3.5×10^(-12)A·Hz^(-1/2)降低至1.0×10^(-12)A·Hz^(-1/2)。展开更多
介绍了高准确度光辐射功率校准原理和方法,利用低温辐射计作为主标准器,以陷阱探测器作为传递标准,激光器作为光源,通过激光功率稳定装置,校准了硅陷阱探测器和铟镓砷陷阱探测器的绝对光谱响应度。选取476.1,488,514.7,521,568,632.8,64...介绍了高准确度光辐射功率校准原理和方法,利用低温辐射计作为主标准器,以陷阱探测器作为传递标准,激光器作为光源,通过激光功率稳定装置,校准了硅陷阱探测器和铟镓砷陷阱探测器的绝对光谱响应度。选取476.1,488,514.7,521,568,632.8,647.1,785,852,980,1 064,1 550,nm共12条谱线完成了校准实验,绝对光谱响应度测量不确定度均优于0.05%。通过量子效率模型得出了硅陷阱探测器的绝对光谱响应曲线。利用In Ga As陷阱探测器分立波长点的绝对光谱响应度与相对光谱响应曲线进行了验证分析。结果表明,2种陷阱探测器均可用作传递标准进行高准确度的可见光和近红外光辐射功率校准和量值传递。展开更多
综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构H...综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.展开更多
文摘Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.
文摘Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors(CID) were developed by RD39. The results show that CID detectors can be operated at the temperature of 100?200 K with much improved charge collection efficiency(CCE) as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.
文摘针对中波红外辐射测量定标的需求,提出了将微型积分球与中红外探测器集成在低温环境中。验证比对了几种用于制作积分球内腔表面的材料样品,通过宽光谱反射率、特征光谱反射率、双向反射分布函数(bidirectional reflectance distribution function,BRDF),以及用激光共聚焦显微镜、扫描电子显微镜(scanning electron microscope,SEM)等进行微观表面形貌的测量,获得了适用于制作中红外积分球的内腔表面制作工艺。BRDF测试结果显示,制作的内腔表面接近朗伯反射表面。测试了积分球探测器样品的光谱与电学性能,经过表面粗糙化处理并蒸镀金属反射膜,样品的光谱波段适应性好,光强衰减比为0.0674,经计算,积分球内腔壁的反射率为96.4%;同时,低温积分球的引入,使探测器芯片的噪声由3.5×10^(-12)A·Hz^(-1/2)降低至1.0×10^(-12)A·Hz^(-1/2)。
基金The National Basic Research Program of China(Nos.J312013A001,JSJC2013210B021)the National High Technology Research and Development Program of China(No.2015AA123702)
文摘介绍了高准确度光辐射功率校准原理和方法,利用低温辐射计作为主标准器,以陷阱探测器作为传递标准,激光器作为光源,通过激光功率稳定装置,校准了硅陷阱探测器和铟镓砷陷阱探测器的绝对光谱响应度。选取476.1,488,514.7,521,568,632.8,647.1,785,852,980,1 064,1 550,nm共12条谱线完成了校准实验,绝对光谱响应度测量不确定度均优于0.05%。通过量子效率模型得出了硅陷阱探测器的绝对光谱响应曲线。利用In Ga As陷阱探测器分立波长点的绝对光谱响应度与相对光谱响应曲线进行了验证分析。结果表明,2种陷阱探测器均可用作传递标准进行高准确度的可见光和近红外光辐射功率校准和量值传递。
文摘综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.
