In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieve...In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.展开更多
InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of w...InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of wavelength division multiplexing （WDM）. In recent years, network traffic has raised demands for high capacity, high speed transmission systems.展开更多
基金supported by the National Science and Technology Major Project(No.2018YFE0200900)。
文摘In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.
基金supported by the National High-Tech Research and Development Program of China(No.2015AA016902)the National Natural Science Foundation of China(Nos.61635010,61674136,and 61435002)
文摘InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of wavelength division multiplexing （WDM）. In recent years, network traffic has raised demands for high capacity, high speed transmission systems.
