A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theo...In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.展开更多
In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET （TGMC-LDMOS） on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift ...In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET （TGMC-LDMOS） on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n^＋-InGaAs region located over the substrate. In a cell length of 5μm, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current （ID） leading to a large reduction in the specific on-resistance （Ron-sp）. Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance （gm） resulting in significant improvement in cut-off frequency （fz） and oscillation frequency （fmax）. Using two-dimensional numerical simulations, a 55 V TGMC- LDMOS is demonstrated to achieve 7 times higher Io, 6.2 times lower Ron-sp, 6.3 times higher peak gm, 2.6 times higher fT, and 2.5 times increase in fmax in comparison to a conventional device for the identical cell length.展开更多
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
基金the General Program of National Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475)the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-7)the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005,cstc2020jscx-gksbX0011)。
文摘In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.
文摘In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET （TGMC-LDMOS） on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n^＋-InGaAs region located over the substrate. In a cell length of 5μm, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current （ID） leading to a large reduction in the specific on-resistance （Ron-sp）. Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance （gm） resulting in significant improvement in cut-off frequency （fz） and oscillation frequency （fmax）. Using two-dimensional numerical simulations, a 55 V TGMC- LDMOS is demonstrated to achieve 7 times higher Io, 6.2 times lower Ron-sp, 6.3 times higher peak gm, 2.6 times higher fT, and 2.5 times increase in fmax in comparison to a conventional device for the identical cell length.
