In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and ...In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and discharge current to investigate the dynamic characteristics in the subnanosecond breakdown during the generation of a supershort avalanche electron beam.Especially,characteristics of dynamic displacement current are presented in the current paper,which is detected between the ionization wave front and a plane anode.It is shown that during a subnanosecond voltage rise time,the amplitude of the dynamic displacement current can be higher than 4 kA.It is demonstrated that the breakdown in the air gap is assisted by ionization processes between the ionization wave front and a plane anode.展开更多
A high-side thin-layer silicon-on-insulator （SOI） pLDMOS is proposed, adopting field implant （FI） and multiple field plate （MFP） technologies. The breakdown mechanisms of back gate （BG） turn-on, surface channe...A high-side thin-layer silicon-on-insulator （SOI） pLDMOS is proposed, adopting field implant （FI） and multiple field plate （MFP） technologies. The breakdown mechanisms of back gate （BG） turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.展开更多
A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduce...A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p–i–p–i–n APDs,and the positive coefficient of 30 mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p–i–p–i–n APDs is 0.11 A/W under a wavelength of 358 nm.展开更多
Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche d...Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.展开更多
基金Project supported by Russian Foundation for Basic Research （12-08-91150-FOEH_a and 12-08-00105-a）, National Natural Science Foundation of China （51222701, 51207154, 51211120183）, and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists （2012T1G0021）.
文摘In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and discharge current to investigate the dynamic characteristics in the subnanosecond breakdown during the generation of a supershort avalanche electron beam.Especially,characteristics of dynamic displacement current are presented in the current paper,which is detected between the ionization wave front and a plane anode.It is shown that during a subnanosecond voltage rise time,the amplitude of the dynamic displacement current can be higher than 4 kA.It is demonstrated that the breakdown in the air gap is assisted by ionization processes between the ionization wave front and a plane anode.
基金Project supported by National Natural Science Foundation of China(Grant No.60906038)
文摘A high-side thin-layer silicon-on-insulator （SOI） pLDMOS is proposed, adopting field implant （FI） and multiple field plate （MFP） technologies. The breakdown mechanisms of back gate （BG） turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.
基金Supported by the National Basic Research Program of China under Grant No 2011CB3019000the High Technology Research and Development Program of China under Grant Nos 2011AA03A112,2011AA03A106 and 2011AA03A105+1 种基金the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085the Open Foundation of Science and Technology on Surface Engineering Laboratory,Lanzhou Institute of Physics(BMK1002).
文摘A separated absorption and multiplication GaN p–i–p–i–n avalanche photo-diode(APD)with a 25μm diameter mesa is proposed and demonstrated.Compared to the conventional p–i–n APD,the p–i–p–i–n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p–i–p–i–n APDs,and the positive coefficient of 30 mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p–i–p–i–n APDs is 0.11 A/W under a wavelength of 358 nm.
文摘Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
