In recent years, the harmful effects of blue light (400 - 500 nm) as a component of visible light (400 - 700 nm) have increasingly gained attention of science, industry, and consumers. To date, only a few in vivo test...In recent years, the harmful effects of blue light (400 - 500 nm) as a component of visible light (400 - 700 nm) have increasingly gained attention of science, industry, and consumers. To date, only a few in vivo test methods for measuring the effects of blue light on the skin have been described. A direct measurement method that can detect the immediate effects of blue light on the epidermal permeability barrier (EPB) is still lacking. In this study, we present a new methodological approach that can be used to investigate both the protective and regenerative effects of cosmetic products on the EPB after blue light irradiation. In a study with 14 female volunteers, it was investigated whether the regular application of an O/W emulsion (day cream) can strengthen and protect the epidermal barrier against damaging blue light radiation of 60 J/cm2 (protective study design) and also whether a disruption of the epidermal barrier caused by blue light radiation is restored faster and better by the regular application of another O/W emulsion (night cream) than in product-untreated skin (regenerative study design). The two O/W emulsions are different in plant oil, active ingredient composition and texture. The seven-day treatment with the day cream initially led to a significant increase in the normalized lipid lamellae length in the intercellular space, whereas the irradiation with blue light after 24 hours led to a significant decrease in the lipid lamellae length in the untreated test area, but not in the area previously treated with the product. Regarding the regenerative study design, a two-day treatment with the night cream was able to restore a blue-light-induced decrease in lipid lamellae length in the intercellular space. In summary, with the study designs presented here, the protective and regenerative effect of two cosmetic products could be demonstrated for the first time on the integrity of the EPB after blue light irradiation and the data showed that the Lipbarvis® method is suitable for investigating the damaging effects of blue light on the EPB in vivo.展开更多
The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The t...The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.展开更多
In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and r...In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.展开更多
In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the d...In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.展开更多
In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron...In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.展开更多
In this study, the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, c...In this study, the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, carrier concentration in the quantum well, internal quantum efficiency, and light output power are systematically investigated. The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction. These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.展开更多
GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spe...GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.展开更多
The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current le...The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells （QWs） when the InGaN/GaN multilayer barriers are used.展开更多
Amazing achievements and accomplishments of space science and technologies in the past half-century have profoundly affected all disciplines of natural science and engineering. By the end of 20(th) Century, man or man...Amazing achievements and accomplishments of space science and technologies in the past half-century have profoundly affected all disciplines of natural science and engineering. By the end of 20(th) Century, man or man-made spacecrafts landed, or approached and surveyed all planets of solar system and their moons except Pluto. Biologists believe that life may emerge and evolve wherever liquid water exists. No liquid water is ever found yet on all planets and their moons in Solar System except for our Earth. Our mother planet turned out to be the only life-supporting oasis within 4 light years of the Milky Way. It is suggested in this article that time has come for science and engineering communities to study and prepare interstellar flight of manned or unmanned spacecrafts beyond Solar System. Four issues are to be addressed as prerequisite for such flight, namely, detailed survey of nearby space beyond Solar System, design of nuclear fusion rocket engine, long-sustainable on-board life-supporting system and breakthrough of the light barrier.展开更多
文摘In recent years, the harmful effects of blue light (400 - 500 nm) as a component of visible light (400 - 700 nm) have increasingly gained attention of science, industry, and consumers. To date, only a few in vivo test methods for measuring the effects of blue light on the skin have been described. A direct measurement method that can detect the immediate effects of blue light on the epidermal permeability barrier (EPB) is still lacking. In this study, we present a new methodological approach that can be used to investigate both the protective and regenerative effects of cosmetic products on the EPB after blue light irradiation. In a study with 14 female volunteers, it was investigated whether the regular application of an O/W emulsion (day cream) can strengthen and protect the epidermal barrier against damaging blue light radiation of 60 J/cm2 (protective study design) and also whether a disruption of the epidermal barrier caused by blue light radiation is restored faster and better by the regular application of another O/W emulsion (night cream) than in product-untreated skin (regenerative study design). The two O/W emulsions are different in plant oil, active ingredient composition and texture. The seven-day treatment with the day cream initially led to a significant increase in the normalized lipid lamellae length in the intercellular space, whereas the irradiation with blue light after 24 hours led to a significant decrease in the lipid lamellae length in the untreated test area, but not in the area previously treated with the product. Regarding the regenerative study design, a two-day treatment with the night cream was able to restore a blue-light-induced decrease in lipid lamellae length in the intercellular space. In summary, with the study designs presented here, the protective and regenerative effect of two cosmetic products could be demonstrated for the first time on the integrity of the EPB after blue light irradiation and the data showed that the Lipbarvis® method is suitable for investigating the damaging effects of blue light on the EPB in vivo.
文摘The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403101)the National Natural Science Foundation of China(Grant Nos.61404114,61504119,and 11004170)+1 种基金the China Postdoctoral Science Foundation(Grant No.2017M611923)the Jiangsu Planned Projects for Postdoctoral Research Funds,China(Grant No.1701067B)
文摘In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.
基金Project supported by the National Natural Science Foundation of China(Grant No.61176043)the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province,China(Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)+2 种基金the First Phase of Construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology,China(Grant No.2010A081001001)the High Efficiency LED Epitaxy and Chip Structure and Key Technology for Industrialization,China(Grant No.2012A080302002)the Youth Funding of South China Normal University(Grant No.2012KJ018)
文摘In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.
基金Project supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010121001)the Special Funds for Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)+3 种基金the Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010119004)the Science and Technology Program Project for High Conversion Efficiency and Application of Direct Driver High-end LED Chip of Guangdong Province,China(Grant No.2013B010204065)the Special Project for Key Science and Technology of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Science and Technology Program Project in Huadu District of Guangzhou City,China(Grant No.HD15PT003)
文摘In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1034004 and 50825603)the Fundamental Research Funds for the Central Universities,China(Grant Nos.12QX14 and 11ZG01)
文摘In this study, the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, carrier concentration in the quantum well, internal quantum efficiency, and light output power are systematically investigated. The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction. These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.
基金supported by the National Natural Science Foundation of China (Grant No. 51172079)the Science and Technology Program of Guangdong Province,China (Grant Nos. 2010B090400456 and 2010A081002002)the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018)
文摘GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51172079)the Science and Technology Program of Guangdong Province,China (Grant Nos. 2010B090400456 and 2010A081002002)the Science and Technology Program of Guangzhou,China (Grant No. 2011J4300018)
文摘The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells （QWs） when the InGaN/GaN multilayer barriers are used.
文摘Amazing achievements and accomplishments of space science and technologies in the past half-century have profoundly affected all disciplines of natural science and engineering. By the end of 20(th) Century, man or man-made spacecrafts landed, or approached and surveyed all planets of solar system and their moons except Pluto. Biologists believe that life may emerge and evolve wherever liquid water exists. No liquid water is ever found yet on all planets and their moons in Solar System except for our Earth. Our mother planet turned out to be the only life-supporting oasis within 4 light years of the Milky Way. It is suggested in this article that time has come for science and engineering communities to study and prepare interstellar flight of manned or unmanned spacecrafts beyond Solar System. Four issues are to be addressed as prerequisite for such flight, namely, detailed survey of nearby space beyond Solar System, design of nuclear fusion rocket engine, long-sustainable on-board life-supporting system and breakthrough of the light barrier.
文摘目的:探讨荆防方加减联合红黄光及重组牛碱性成纤维细胞生长因子(rb-bFGF)凝胶治疗面部糖皮质激素依赖性皮炎(Facial corticosteroid addictive dermatitis,FCAD)的效果。方法:根据治疗方法不同将2022年2月-2023年8月笔者医院的90例FCAD患者分为对照组和观察组,各45例。对照组使用红黄光照射治疗,观察组同时使用荆防方治疗。对比两组的临床疗效、症状评分、皮肤屏障功能、血清炎症因子水平、不良反应。结果:观察组的有效率(91.11%)高于对照组(73.33%)(P<0.05),观察组治疗后潮红、瘙痒、干燥脱屑、灼热疼痛的症状评分均低于对照组(P<0.05),观察组治疗后的皮脂含量、皮肤角质层含水量(Cuticle water conten,WCSC)高于对照组,经皮肤水分流失量(Transcutaneous water loss,TEWL)低于对照组(P<0.05),观察组治疗后的干扰素-γ(INF-γ)、免疫球蛋白-E(IgE)、白细胞介素-4(IL-4)水平均低于对照组(P<0.05),两组不良反应比较,差异无统计学意义(P>0.05)。结论:荆防方加减联合红黄光及rb-bFGF凝胶治疗FCAD的效果显著,能够减轻患者的症状,提高皮肤屏障功能,改善炎症状态。
