Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of...Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of the qubits,yet this factor remains largely unexplored,driving our research endeavor.In this study,we utilized RP-CVD(Reduced Pressure Chemical Vapor Deposition)to grow Ge quantum wells with varied compressive strain,proposing growth schemes for lightly-strained(ε∥=-0.43%)QW(quantum well),standard-strained(ε∥=-0.61%)QW,and heavily-strained(ε∥=-1.19%)QW.Through comprehen-sive material characterization,particularly employing the low-temperature magneto-transport measurements,we derived the percolation densities ranging from 4.7×10^(10) to 14.2×10^(10) cm^(-2) and mobilities from 3.382×10^(5) to 7.301×10^(5) cm^(2)∙V^(-1)∙s^(-1).Combined with the first-principles calculations,our analysis delves into the trends in effective mass and percolation density at low temperatures,shedding light on the impact of quantum effects on band structures and the interplay between structural components and wave functions.This research offers a comprehensive investigation into the intrinsic mechanisms governing complex multi-strained quantum wells,spanning growth,characterization,and computational perspectives,thereby establish-ing a strategy for the growth of high-quality strained quantum wells.展开更多
To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and ...To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum wells.The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra.The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed.Our study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.展开更多
Chinese named entity recognition(CNER)has received widespread attention as an important task of Chinese information extraction.Most previous research has focused on individually studying flat CNER,overlapped CNER,or d...Chinese named entity recognition(CNER)has received widespread attention as an important task of Chinese information extraction.Most previous research has focused on individually studying flat CNER,overlapped CNER,or discontinuous CNER.However,a unified CNER is often needed in real-world scenarios.Recent studies have shown that grid tagging-based methods based on character-pair relationship classification hold great potential for achieving unified NER.Nevertheless,how to enrich Chinese character-pair grid representations and capture deeper dependencies between character pairs to improve entity recognition performance remains an unresolved challenge.In this study,we enhance the character-pair grid representation by incorporating both local and global information.Significantly,we introduce a new approach by considering the character-pair grid representation matrix as a specialized image,converting the classification of character-pair relationships into a pixel-level semantic segmentation task.We devise a U-shaped network to extract multi-scale and deeper semantic information from the grid image,allowing for a more comprehensive understanding of associative features between character pairs.This approach leads to improved accuracy in predicting their relationships,ultimately enhancing entity recognition performance.We conducted experiments on two public CNER datasets in the biomedical domain,namely CMeEE-V2 and Diakg.The results demonstrate the effectiveness of our approach,which achieves F1-score improvements of 7.29 percentage points and 1.64 percentage points compared to the current state-of-the-art(SOTA)models,respectively.展开更多
Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However...Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However,our previous research has revealed efficient carrier escape in low-dimensional structures,contradicting this conventional understanding.In this study,we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone.By accounting for all wave vectors,we obtain a certain distribution of carrier energy at each quantized energy level,giving rise to the energy subbands.These results enable carriers to escape from the well under the influence of an electric field.Additionally,we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport.Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands,discovering new physical phenomena,and designing novel devices with superior performance.展开更多
Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures...Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.展开更多
Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these ...Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these issues.With such methods,existing fractures are refractured,and/or new fractures are created to facilitate communication with natural fractures.This study explored how different refracturing methods affect horizontal well fracture networks,with a special focus on morphology and related fluid flow changes.In particular,the study relied on the unconventional fracture model(UFM).The evolution of fracture morphology and flow field after the initial fracturing were analyzed accordingly.The simulation results indicated that increased formation energy and reduced reservoir stress differences can promote fracture expansion.It was shown that the length of the fracture network,the width of the fracture network,and the complexity of the fracture can be improved,the oil drainage area can be increased,the distance of oil and gas seepage can be reduced,and the production of a single well can be significantly increased.展开更多
Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS reco...Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.展开更多
基金supported by the Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301)the National Natural Science Foundation of China (Grant No.6240033549).
文摘Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of the qubits,yet this factor remains largely unexplored,driving our research endeavor.In this study,we utilized RP-CVD(Reduced Pressure Chemical Vapor Deposition)to grow Ge quantum wells with varied compressive strain,proposing growth schemes for lightly-strained(ε∥=-0.43%)QW(quantum well),standard-strained(ε∥=-0.61%)QW,and heavily-strained(ε∥=-1.19%)QW.Through comprehen-sive material characterization,particularly employing the low-temperature magneto-transport measurements,we derived the percolation densities ranging from 4.7×10^(10) to 14.2×10^(10) cm^(-2) and mobilities from 3.382×10^(5) to 7.301×10^(5) cm^(2)∙V^(-1)∙s^(-1).Combined with the first-principles calculations,our analysis delves into the trends in effective mass and percolation density at low temperatures,shedding light on the impact of quantum effects on band structures and the interplay between structural components and wave functions.This research offers a comprehensive investigation into the intrinsic mechanisms governing complex multi-strained quantum wells,spanning growth,characterization,and computational perspectives,thereby establish-ing a strategy for the growth of high-quality strained quantum wells.
基金Project supported by the National Key R&D Program of China (Grant No. 2019YFA0708202)the National Natural Science Foundation of China (Grant Nos. 11974023, 52021006, 61974139, 12074369, and 12104017)+1 种基金the “2011 Program” from the Peking–Tsinghua–IOP Collaborative Innovation Center of Quantum Matterthe Youth Supporting Program of Institute of Semiconductors
文摘To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum wells.The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra.The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed.Our study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.
基金supported by Yunnan Provincial Major Science and Technology Special Plan Projects(Grant Nos.202202AD080003,202202AE090008,202202AD080004,202302AD080003)National Natural Science Foundation of China(Grant Nos.U21B2027,62266027,62266028,62266025)Yunnan Province Young and Middle-Aged Academic and Technical Leaders Reserve Talent Program(Grant No.202305AC160063).
文摘Chinese named entity recognition(CNER)has received widespread attention as an important task of Chinese information extraction.Most previous research has focused on individually studying flat CNER,overlapped CNER,or discontinuous CNER.However,a unified CNER is often needed in real-world scenarios.Recent studies have shown that grid tagging-based methods based on character-pair relationship classification hold great potential for achieving unified NER.Nevertheless,how to enrich Chinese character-pair grid representations and capture deeper dependencies between character pairs to improve entity recognition performance remains an unresolved challenge.In this study,we enhance the character-pair grid representation by incorporating both local and global information.Significantly,we introduce a new approach by considering the character-pair grid representation matrix as a specialized image,converting the classification of character-pair relationships into a pixel-level semantic segmentation task.We devise a U-shaped network to extract multi-scale and deeper semantic information from the grid image,allowing for a more comprehensive understanding of associative features between character pairs.This approach leads to improved accuracy in predicting their relationships,ultimately enhancing entity recognition performance.We conducted experiments on two public CNER datasets in the biomedical domain,namely CMeEE-V2 and Diakg.The results demonstrate the effectiveness of our approach,which achieves F1-score improvements of 7.29 percentage points and 1.64 percentage points compared to the current state-of-the-art(SOTA)models,respectively.
基金the National Natural Science Foundation of China(Grant Nos.61991441 and 62004218)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2021005).
文摘Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However,our previous research has revealed efficient carrier escape in low-dimensional structures,contradicting this conventional understanding.In this study,we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone.By accounting for all wave vectors,we obtain a certain distribution of carrier energy at each quantized energy level,giving rise to the energy subbands.These results enable carriers to escape from the well under the influence of an electric field.Additionally,we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport.Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands,discovering new physical phenomena,and designing novel devices with superior performance.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000)Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005)。
文摘Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.
基金the China Research and Pilot Test on Key Technology of Efficient Production of Changqing Tight Oil(Grant No.2021DJ2202).
文摘Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these issues.With such methods,existing fractures are refractured,and/or new fractures are created to facilitate communication with natural fractures.This study explored how different refracturing methods affect horizontal well fracture networks,with a special focus on morphology and related fluid flow changes.In particular,the study relied on the unconventional fracture model(UFM).The evolution of fracture morphology and flow field after the initial fracturing were analyzed accordingly.The simulation results indicated that increased formation energy and reduced reservoir stress differences can promote fracture expansion.It was shown that the length of the fracture network,the width of the fracture network,and the complexity of the fracture can be improved,the oil drainage area can be increased,the distance of oil and gas seepage can be reduced,and the production of a single well can be significantly increased.
基金conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009).
文摘Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.