对UNCD的研发背景、特性、系列制品的用途以及研究与发展方向作了翔实阐述。系列制品包括:Na Dia Probes,Conductive Na Dia Probe,UNCD Faces and Seals,UNCD Horigon。文章从医疗器具、人工器官及医学研究;MEMS生物传感器;污水净化与...对UNCD的研发背景、特性、系列制品的用途以及研究与发展方向作了翔实阐述。系列制品包括:Na Dia Probes,Conductive Na Dia Probe,UNCD Faces and Seals,UNCD Horigon。文章从医疗器具、人工器官及医学研究;MEMS生物传感器;污水净化与清除有毒物质;表面声波与体声波器件;旋转机械设备中的机械密封与流体动力学轴承;电子频率基准仪以及下一代化学机械抛光垫修整器与其它三维形状金刚石制品等潜在应用领域论述UNCD的研究与发展方向。展开更多
Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial...Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial arc plasma deposition method.They were characterized by temperature-dependent capacitance-frequency measurements in the temperature and frequency ranges of 300-400 K and 50 kHz-2 MHz,respectively.The energy distribution of trap density of states in the films was extracted using a simple technique utilizing the measured capacitance-frequency characteristics.In the measured temperature range,the energy-distributed traps exhibited Gaussian-distributed states with peak values lie in the range:2.84×10^(16)-2.73×10^(17)eV^(-1)cm^(-3)and centered at energies of 120-233 meV below the conduction band.These states are generated due to a large amount of sp^(2)-C andπ-bond states,localized in GBs of the UNCD/a-C:H film.The attained defect parameters are accommodating to understand basic electrical properties of UNCD/a-C:H composite and can be adopted to suppress defects in the UNCD-based materials.展开更多
文摘对UNCD的研发背景、特性、系列制品的用途以及研究与发展方向作了翔实阐述。系列制品包括:Na Dia Probes,Conductive Na Dia Probe,UNCD Faces and Seals,UNCD Horigon。文章从医疗器具、人工器官及医学研究;MEMS生物传感器;污水净化与清除有毒物质;表面声波与体声波器件;旋转机械设备中的机械密封与流体动力学轴承;电子频率基准仪以及下一代化学机械抛光垫修整器与其它三维形状金刚石制品等潜在应用领域论述UNCD的研究与发展方向。
文摘Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial arc plasma deposition method.They were characterized by temperature-dependent capacitance-frequency measurements in the temperature and frequency ranges of 300-400 K and 50 kHz-2 MHz,respectively.The energy distribution of trap density of states in the films was extracted using a simple technique utilizing the measured capacitance-frequency characteristics.In the measured temperature range,the energy-distributed traps exhibited Gaussian-distributed states with peak values lie in the range:2.84×10^(16)-2.73×10^(17)eV^(-1)cm^(-3)and centered at energies of 120-233 meV below the conduction band.These states are generated due to a large amount of sp^(2)-C andπ-bond states,localized in GBs of the UNCD/a-C:H film.The attained defect parameters are accommodating to understand basic electrical properties of UNCD/a-C:H composite and can be adopted to suppress defects in the UNCD-based materials.
