TiO_2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.

Ultraviolet ZnO Photodetectors with High Gain

Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.

Spatial resolution optimization in a THGEM-based UV photon detector

Introduction THick Gas Electron Multiplier(THGEM)is considered in many UV photon detector applications.It has the capability of detecting single photon and imaging with high sensitivity.Operating parameters such as choice of gas mixture,pressure,drift field,drift gap,multiplication voltage,induction field and induction gap play an important role in deciding the spatial resolution of the detector.Detailed simulation study enables to optimize the above-mentioned parameters for a given THGEM-based imaging detector and hence to achieve improved performance for the same.Materials and methods Simulation,using ANSYS and Garfield++,starts with the release of primary electrons at random coordinates on the photocathode plane.They are tracked as they pass through the drift gap and THGEM hole till the electron cloud reaches anode plane.Distribution of electron cloud on the anode plane along X and Y axis is plotted in histogram and fitted with Gaussian function to determine spatial resolution.Ar/CO_(2)(70:30)mixture,which shows higher ETE and lower transverse diffusion,is chosen for this simulation study.Conclusion Transverse diffusion has a major impact on both ETE and the spatial resolution.Lower transverse diffusion coefficient is always desired for having better resolution as well as for ETE.It is found from the simulation study that higher gas pressure,lower drift field and induction field,smaller drift and induction gap can provide optimum detection efficiency with the best spatial resolution.The simulation method proposed here can also be extended to X-ray imaging detectors.

ZnO/Ag nanowires composite film ultraviolet photoconductive detector

ZnO/Ag nanowires （NWs） film ultraviolet （UV） detector was fabricated by a simple and low-cost solution-processed method. In order to prepare this device, Ag NWs network was first spin-coated on glass sub- strate as a transparent conducting electrode, then ZnO NWs arrays were grown vertically on the Ag NWs network based on the hydrothermal method. This UV detector exhibited an excellent detection performance with large on/off ratio and short response time. Several process and working parameters were particularly investigated to analyze the relationship between structure and performance, which include growth time of ZnO NWs array, spin speed of Ag NWs network and working temperature. This UV photoconductive detector is based on two kinds of one-dimension nanomaterials, and it was regarded as a compromise between high performance with large area, low voltage and low cost.