The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quant...The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^(-1) eV^(-1), a maximum spontaneous emission of 3.34 × 10^(28) and 3.43 × 10^(28) s^(-1) cm^(-3) eV^(-1), and a maximum Light output power of 0.56 and 0.89 mW.展开更多
In this paper we have reported green emission for europium activated strontium thiogallate. The phosphor is prepared by the precipitation method followed by heating at reducing atmosphere produced by the burning charc...In this paper we have reported green emission for europium activated strontium thiogallate. The phosphor is prepared by the precipitation method followed by heating at reducing atmosphere produced by the burning charcoal and characterized using XRD, PL and EL techniques. The phosphor SrGa2S4:Eu2+ gives intense green emission at 525 nm when excited by 400 nm wavelength. LEDs were also fabricated by coating europium activated strontium thiogallate on 390 nm LED chip. Intense green LEDs were obtained which can be useful for new LED applications. This phosphor can also be a prominent green component for the fabrication of white LEDs from UV diodes.展开更多
基金supported by the University of Abou-Bekr-Belkaid, Materials and Renewable Energy Research Unit, Tlemcen, Algeria
文摘The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^(-1) eV^(-1), a maximum spontaneous emission of 3.34 × 10^(28) and 3.43 × 10^(28) s^(-1) cm^(-3) eV^(-1), and a maximum Light output power of 0.56 and 0.89 mW.
文摘In this paper we have reported green emission for europium activated strontium thiogallate. The phosphor is prepared by the precipitation method followed by heating at reducing atmosphere produced by the burning charcoal and characterized using XRD, PL and EL techniques. The phosphor SrGa2S4:Eu2+ gives intense green emission at 525 nm when excited by 400 nm wavelength. LEDs were also fabricated by coating europium activated strontium thiogallate on 390 nm LED chip. Intense green LEDs were obtained which can be useful for new LED applications. This phosphor can also be a prominent green component for the fabrication of white LEDs from UV diodes.
