High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

Thin relaxed SiGe layer grown on Ar^+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different ener- gies (30 keV,40 keV and 60 keV) at the same implanted dose (3×1015cm-2) were grown by ultra high vacuum chemi- cal vapor deposition (UHVCVD). Rutherford backscattering/ion channeling (RBS/C),Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C demonstrate that these thin Si0.81Ge0.19 films were epitaxially grown on the Ar+ ion implanted Si substrates,although there existed lots of crystal defects. The relaxation extent of Si0.81Ge0.19 films on the Ar+ implanted Si substrates is larger than that in the unimplanted case,which were verified by Raman spectra. Considering the relaxation extent of strain,surface roughness and crystal defects in these SiGe films,the thin relaxed SiGe film on the 30 keV Ar+ implanted Si substrate is optimal.

1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

FABRICATION OF DIAMOND TUBES IN BIAS-ENHANCED HOT-FILAMENT CHEMICAL VAPOR DEPOSITION SYSTEM

Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arranged is investigated.The self-supported diamond tubes are obtained by etching away the tungsten substrates.The quality of the diamond film before and after the removal of substrates is observed by scanning electron microscope（SEM）and Raman spectrum.The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD.The compressive stress in diamond film formed during the deposition is released after the substrate etches away by mixture of H2O2 and NH4 OH.There is no residual stress in diamond tube after substrate removal.

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method

Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.

Effect of Deposition Time on Microstructures and Growth Behavior of ZrC Coatings Prepared by Low Pressure Chemical Vapor Deposition with the Br2-Zr-C3H6-H2-Ar System

ZrC coatings were deposited on graphite substrates by low pressure chemical vapor deposition（LPCVD） with the Br2-Zr-C3H6-H2-Ar system. The effects of deposition time on the microstructures and growth behavior of ZrC coatings were investigated. ZrC coating grew in an island-layer mode. The formation of coating was dominated by the nucleation of ZrC in the initial 20 minutes, and the rapid nucleation generated a fine-grained structure of ZrC coating. When the deposition time was over 30 min, the growth of coating was dominated by that of crystals, giving a column-arranged structure. Energy dispersive X-ray spectroscopy showed that the molar ratio of carbon to zirconium was near 1：1 in ZrC coating, and X-ray photoelectron spectroscopy showed that ZrC was the main phase in coatings, accompanied by about 2.5mol% ZrO2 minor phase.

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.

Diagnosis of gas phase near the substrate surface in diamond film deposition by high-power DC arc plasma jet CVD

Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane concentration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments （DOE）. An explanation for this dependence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination, or are consumed on the substrate surface where chemical reactions occur.

Synthesis and Device Applications of High-Density Aligned Carbon Nanotubes Using Low-Pressure Chemical Vapor Deposition and Stacked Multiple Transfer

For nanotube-based electronics to become a viable alternative to silicon technology,high-density aligned carbon nanotubes are essential.In this paper,we report the combined use of low-pressure chemical vapor deposition and stacked multiple transfer to achieve high-density aligned nanotubes.By using an optimized nanotube synthesis recipe,we have achieved high-density aligned carbon nanotubes with density as high as 30 tubes/μm.In addition,a facile stacked multiple transfer technique has been developed to further increase the nanotube density to 55 tubes/μm.Furthermore,high-performance submicron carbon nanotube field-effect transistors have been fabricated on the high-density aligned nanotubes.Before removing the metallic nanotubes by electrical breakdown,the devices exhibit on-current density of 92.4μA/μm and normalized transconductance of 13.3μS/μm.Moreover,benchmarking with the aligned carbon nanotube transistors in the literature indicates that our devices exhibit the best performance so far,which is attributed to both the increased nanotube density and scaling down of channel length.This study shows the great potential of using such high-density aligned nanotubes for high performance nanoelectronics and analog/RF applications.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

BiOI Nanosheets Grown by Chemical Vapor Deposition and Its Conversion to Highly Efficient BiVO4 Photoanode

Bismuth vanadate （BiVO4） has been identified as one of the excellent visible-light-responsive photoanode for use in the photoelectrochemical water splitting. Recently intense research efforts have been devoted to the development of highly efficient BiVO4 photoanode. Herein, we reported a low-cost and scalable method for preparing nanostructured BiVO4 film. A much enhanced photocurrent （1.5 mAocm 2） was obtained for such film, which was 6.5 times higher than that of planar film at 1.23 V [vs. RHE （Reversible Hydrogen Electrode）]. The method provides an eco-friendly, reproducible and facile way to scale up on different substrates with attractive potential.

High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film

Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors

Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.

High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer

Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride. .

AlGaAs光电阴极表面清洗技术研究

针对高Al组分AlGaAs光电阴极设计了不同清洗方法,通过XPS对不同清洗条件下的材料表面元素成分进行了测试分析,并结合SEM和高倍显微镜对光电阴极材料表面缺陷进行了分析研究。在超高真空腔体中进行了透射式AlGaAs光电阴极及其像增强管的制备,测试了器件的光谱响应曲线和图像质量。结果表明,采用H_(2)SO_(4)/H_(2)O_(2)/H_(2)O溶液和HCl/H_(2)O溶液的化学清洗工艺,结合等离子体物理清洗工艺,可有效去除AlGaAs表面的氧化物、有机颗粒和杂质C,提升器件的光谱灵敏度和图像质量。

MOCVD生长的中红外高功率量子级联激光器

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长技术以满足快速增长的市场需求。本文报道了全结构由MOCVD技术外延的QCL,通过将传统的“双声子共振”有源区结构修订为“单声子共振结合连续态抽取”结构,减少了电子的热逃逸,改善了器件的温度特性。针对该结构,进一步改变了有源区的掺杂浓度,并对比了不同掺杂浓度对器件性能的影响。腔长8 mm、平均脊宽约6.7μm的较高掺杂有源区器件在20℃下连续输出功率达3.43 W,中心波长约4.6μm,电光转化效率达13.1%;8 mm腔长的较低掺杂有源区器件在20℃下连续输出功率达2.73 W,中心波长约4.5μm,阈值电流仅0.56 A,峰值电光转化效率达15.6%。器件的输出功率和电光转化效率较之前文献报道的MOCVD制备的QCL有明显提高。该结果表明,MOCVD完全具备生长高功率QCL的能力,这对推动QCL的技术进步具有重要意义。

CVD法制备Inconel 718高温合金表面铝化物涂层高温氧化行为研究

Inconel 718高温合金是燃气轮机和航空发动机热端部件的关键核心材料,其表面通常制备有铝化物涂层,起到提高抗氧化和热腐蚀性能的作用。理解铝化物涂层的高温氧化行为,是提高部件抗高温氧化能力的关键。采用化学气相沉积(CVD)技术,在Inconel 718高温合金表面制备了铝化物涂层,在大气环境、950℃条件下开展了恒温氧化测试,采用扫描电子显微镜、X射线衍射和X射线能谱等手段,研究了其高温氧化行为,并与Inconel 718高温合金进行对比。结果表明:Inconel 718高温合金表面制备的CVD铝化物涂层,其表面粗糙,具有双层结构。外层为富含Ni和Al元素的β-NiAl层,平均厚度为14.1μm,内层为富含Fe和Cr元素的σ相与富含Nb、Mo和Fe元素的Laves相共存的互扩散层,平均厚度为5.9μm。恒温氧化后,Inconel 718高温合金表面氧化生成了Cr_(2)O_(3)膜,而CVD铝化物涂层表面氧化生成了α-Al_(2)O_(3)膜。Cr_(2)O_(3)膜和α-Al_(2)O_(3)膜的生长都遵循抛物线型生长规律,Cr_(2)O_(3)膜的生长速率常数为0.86μm·h^(-1/2),α-Al_(2)O_(3)膜的生长速率常数为0.15μm·h^(-1/2)。此外,观察发现Inconel 718高温合金发生了内氧化,而CVD铝化物涂层未出现内氧化,两者氧化行为差异的原因在于CVD铝化物涂层中的β-NiAl相,其氧化生成均匀、连续、致密的α-Al_(2)O_(3)膜,阻止了内部金属发生进一步氧化。本研究揭示了Inconel 718高温合金和CVD铝化物涂层的抗高温氧化作用机理,为Inconel 718高温合金用高抗氧化性CVD铝化物涂层的制备及应用提供了技术支撑。

Controllable synthesis of NiS and NiS2 nanoplates by chemical vapor deposition

Mulitipe stoichiometric ratio of two-dimensional(2D)transition metal dichalcogenides(TMDCs)attracted considerable interest for their unique chemical and physical properties.Here we developed a chemical vapor deposition(CVD)method to controllably synthesize ultrathin NiS and NiS2 nanoplates.By tuning the growth temperature and the amounts of the sulfur powder,2D nonlayered NiS and NiS2 nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm,respectively.X-ray diffraction(XRD)and transmission electron microscopy(TEM)characterization reveal that the 2D NiS and N1S2 nanoplates are high-quality single crystals in the hexagonal and cubic phase,respectively.Electrical transport studies show that electrical conductivities of the 2D NiS and N1S2 nanoplates are as high as 4.6 x 10^5 and 6.3 x 10^5 S·m^-1,respectively.The electrical results demonstrate that the synthesized metallic NiS and NiS2 could serve as good electrodes in 2D electronics.