Hard Superconducting Gap in Pb Te Nanowires

Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits.The performance of these quantum devices heavily relies on the quality of the induced superconducting gap.A hard gap.

Second Harmonic Generation in Nanowires

Second harmonic generation(SHG)in optical materials serves as important techniques for laser source generations in awkward spectral ranges,physical identities of materials in crystalline symmetry and interfacial configuration.Here,we present a comprehensive review on SHGs in nanowires(NWs),which have been recognized as an important element in constructing photonic and optoelectronic devices with compact footprint and high quantum yield.Relying on NW’s one-dimensional geometry,its SHG could be employed as a sophisticated spectroscopy to determine the crystal phase and orientation,as well as the internal strain.The enhancements of SHG efficiency in NWs are discussed then,which were realized by hybrid integrating them with two-dimensional materials,nanophotonic and plasmonic structures.Finally,the potential applications of NW SHGs are concluded,including the areas of optical correlators and constructions of on-chip nano-laser sources.

Determination of Thermal Properties of Unsmooth Si Nanowires

We estimate the thermal properties of unsmooth Si nanowires,considering key factors such as size(diameter),surface texture(roughness)and quantum size effects(phonon states)at different temperatures.For nanowires with a diameter of less than 20 nm,we highlight the importance of quantum size effects in heat capacity calculations,using dispersion relations derived from the modified frequency equation for the elasticity of a rod.The thermal conductivities of nanowires with diameters of 37,56,and 115nm are predicted using the Fuchs–Sondheimer model and Soffer’s specular parameter.Notably,the roughness parameters are chosen to reflect the technological characteristics of the real surfaces.Our findings reveal that surface texture plays a significant role in thermal conductivity,particularly in the realm of ballistic heat transfer within nanowires.This study provides practical recommendations for developing new thermal management materials.

Exploring reservoir computing:Implementation via double stochastic nanowire networks

Neuromorphic computing,inspired by the human brain,uses memristor devices for complex tasks.Recent studies show that self-organizing random nanowires can implement neuromorphic information processing,enabling data analysis.This paper presents a model based on these nanowire networks,with an improved conductance variation profile.We suggest using these networks for temporal information processing via a reservoir computing scheme and propose an efficient data encoding method using voltage pulses.The nanowire network layer generates dynamic behaviors for pulse voltages,allowing time series prediction analysis.Our experiment uses a double stochastic nanowire network architecture for processing multiple input signals,outperforming traditional reservoir computing in terms of fewer nodes,enriched dynamics and improved prediction accuracy.Experimental results confirm the high accuracy of this architecture on multiple real-time series datasets,making neuromorphic nanowire networks promising for physical implementation of reservoir computing.

Diameter-dependent ultra-high thermoelectric performance of ZnO nanowires

Zinc oxide(ZnO)shows great potential in electronics,but its large intrinsic thermal conductivity limits its thermoelectric applications.In this work,we explore the significant carrier transport capacity and diameter-dependent thermoelectric characteristics of wurtzite-ZnO(0001)nanowires based on first-principles and molecular dynamics simulations.Under the synergistic effect of band degeneracy and weak phonon-electron scattering,P-type(ZnO)_(73) nanowires achieve an ultrahigh power factor above 1500μW·cm^(-1)·K^(-2)over a wide temperature range.The lattice thermal conductivity and carrier transport properties of ZnO nanowires exhibit a strong diameter size dependence.When the ZnO nanowire diameter exceeds 12.72A,the carrier transport properties increase significantly,while the thermal conductivity shows a slight increase with the diameter size,resulting in a ZT value of up to 6.4 at 700 K for P-type(ZnO)_(73).For the first time,the size effect is also illustrated by introducing two geometrical configurations of the ZnO nanowires.This work theoretically depicts the size optimization strategy for the thermoelectric conversion of ZnO nanowires.

Flexible polydimethylsiloxane pressure sensor with micro-pyramid structures and embedded silver nanowires:A novel application in urinary flow measurement

Flexible pressure sensors are lightweight and highly sensitive,making them suitable for use in small portable devices to achieve precise measurements of tiny forces.This article introduces a low-cost and easy-fabrication strategy for piezoresistive flexible pressure sensors.By embedding silver nanowires into a polydimethylsiloxane layer with micro-pyramids on its surface,a flexible pressure sensor is created that can detect low pressure (17.3 Pa) with fast response (<20 ms) and high sensitivity (69.6 mA kPa-1).Furthermore,the pressure sensor exhibits a sensitive and stable response to a small amount of water flowing on its surface.On this basis,the flexible pressure sensor is innovatively combined with a micro-rotor to fabricate a novel urinary flow-rate meter (uroflowmeter),and results from a simulated human urination experiment show that the uroflowmeter accurately captured all the essential shape characteristics that were present in the pump-simulated urination curves.Looking ahead,this research provides a new reference for using flexible pressure sensors in urinary flow-rate monitoring.

Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

Fabricating AC/DC nanogenerators based on single ZnO nanowires by using a nanomanipulator in a scanning electron microscope

Single zinc oxide nanowires(ZnO NWs)are promising for nanogenerators because of their excellent semiconducting and piezoelectric properties,but characterizing the latter efficiently is challenging.As reported here,an electrical breakdown strategy was used to construct single ZnO NWs with a specific length.With the high operability of a nanomanipulator in a scanning electron microscope,ZnO-NW-based twoprobe and three-probe structures were constructed for fabricating AC/DC nanogenerators,respectively.For a ZnO NW,an AC output of between−15.31 mV and 5.82 mV was achieved,while for a DC nanogenerator,an output of24.3 mV was realized.Also,the three-probe structure’s output method was changed to verify the distribution of piezoelectric charges when a single ZnO NW is bent by a probe,and DC outputs of different amplitudes were achieved.This study provides a low-cost,highly convenient,and operational method for studying the AC/DC output characteristics of single NWs,which is beneficial for the further development of nanogenerators.

Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates

GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.

Synthesis of Ordered Ultra-long Manganite Nanowires via Electrospinning Method

We develop a new electrospinning method to prepare ultra-long ordered La1-xSrxMnO3 （LSMO） nanowires. The length is up to several centimeters and is only limited by the size of the collector. The well-ordered straight-line structure ensures the transport measurement, which is impossible to be carried out for the random nanowires fabricated by the traditional electrospinning method. Magnetic and transport measurements indicate that the physical properties of the LSMO nanowires depend sensitively on the doping concentration. At the optimum doping, the LSMO wires are ferromagnetic at room temperature with a metal-insulator transition temperature close to room temperature. Magnetic force microscopy studies are also performed to provide a microscopic view of these ultra-long nanowires.

Embedded high-quality ternary GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy

Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources.A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots.Here,we report the growth of embedded GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy.It is found that the size of the GaAs_(1−x)Sb_(x) quantum dot can be well-defined by the GaAs nanowire.Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature.All GaAs_(1−x)Sb_(x) quantum dots exhibit a pure zinc-blende phase.In addition,we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs_(1−x)Sb_(x) quantum dots.Different from the traditional growth process of the passivation layer,GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs_(1−x)Sb_(x) quantum dots.The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer.The successful fabrication of embedded high-quality GaAs_(1−x)Sb_(x) quantum dots lays the foundation for the realization of GaAs_(1−x)Sb_(x)-based single photon sources.

FABRICATION OF Bi NANOWIRE ARRAY BY ELECTRODEPOSITION TECHNOLOGY

In the fabrication of Bi nanowire array thermoelectric materials,electrodeposition technology has been used to deposit bismuth into the nanopores of anodic alumina porous films.The experiments show that the temperature significantly affects the electrodepositing process,and the simple form of Bi 3+ in the solutions is helpful to the deposition of metal Bi.The pulse plating technique is necessary for the electrodeposition because of the diffusive difficulty of Bi 3+ into the nanopores of the films.The XRD analysis indicates that Bi nanowire arrays have been manufactured by this technology.

Characterization of SiC nanowires prepared on C/C composite without catalyst by CVD

SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.

Effect of crystal orientation on tensile mechanical properties of single-crystal tungsten nanowire

Based on the high-purity single-crystal tungsten nanowire firstly prepared by the metal-catalyzed vapor-phase reaction method, molecular dynamics method was used to calculate tensile stress-strain curves and simulate microscopic deformation structures of the single-crystal tungsten nanowires with different crystal orientations of 〈100〉, 〈110〉and 〈111〉, in order to reveal the effect of crystal orientation on their tensile mechanical properties and failure mechanisms. Research results show that all of the stress-strain curves are classified into four stages： elastic stage, damage stage, yielding stage and failure stage, where 〈100〉orientation has a special hardening stage after yielding and two descending stages. The crystal orientation has little effect on elastic modulus but great effect on tensile strength, yielding strength and ductility, depending on different atomic surface energies and principal sliding planes. The calculated values of elastic modulus are in good agreement with the tested values of elastic modulus.

Low Temperature Synthesis and Optical Properties of ZnO Nanowires

ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.

Molecular dynamics study on temperature and strain rate dependences of mechanical tensile properties of ultrathin nickel nanowires

Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the （100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.

An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires

Using a nanoscale silica fiber taper,light can be efficiently coupled into a single ZnO nanowire by means of evanescent coupling. The method is valid for launching light into a single nanowire in the ultraviolet to infrared range with a coupling efficiency of 25%, Low-loss optical guiding of ZnO nanowires is demonstrated, and the photoluminescence of a single ZnO nanowire is also observed. Compared to conventional approaches in which a lensfocused laser beam is used to excite nanowires at specific wavelengths,this evanescent coupling approach has advantages such as high coupling efficiency and broad-band validity, and it is promising for the optical characterization of semiconductor nanowires or nanoribbons.

Hydrothermal Synthesis and Efficient Visible Light Photocatalytic Properties of InVO4 Hierarchical Microspheres and InVO4 Nanowires

In this work, InVO4 hierarchical microspheres and InVO4 nanowires were successfully synthesized by a facile hydrothermal method. Field emission scanning electron microscopy showed that InVO4 crystals can be fabricated in different morphologies by simply manipulating the reuction parameters of hydrothermal process. The as-prepared InVO4 photocatalysts exhibited higher photocatalytic activities in the degradation of rhodamine B under visible-light irradiation （λ〉420 nm） compared with commercial P25 TiO2. Furthermore, the as-synthesized InVO4 hierarchical microspheres showed higher photocatalytic activity than that of InVO4 nanowires. Up to 100% Rh B （3 μmol/L） was decolorized after visible-light irradiation for 40 min. In addition, the reason for the difference in the photocatalytic activities for InVO4 hierarchical microspheres and InVO4 nanowires was studied based on their structures and morphologies.

Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires

Synthesis of amorphous SiCO nanowires was carried out by means of direct current are discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20-100 gm in length and 10-100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.

基于Pd-Ni/Si Nanowires电极室内甲醛实时监测处理装置

研究设计一种室内甲醛气体实时监测和处理一体化装置。首先,通过电化学方法刻蚀大面积硅纳米线阵列并通过无电镀技术制备镍/硅纳米线(Ni/Si Nanowires)和钯-镍/硅纳米线(Pd-Ni/Si Nanowires)阵列电极,Pd-Ni/Si Nanowires阵列电极对甲醛有很强电化学催化氧化作用,以其为电化学甲醛传感器工作阳极,以Ni/Si Nanowires阵列为对电极,Ag/AgCl为参考电极,循环伏安技术测试结果显示该传感器对甲醛浓度灵敏度高达0.265 mA/(mmol/L),三倍信噪比检测限为2μmol/L。其次,利用STC12C5410AD单片机产生三角波扫描电压模拟循环伏安原理,可利用回路中因催化氧化产生的峰电流值来监测室内甲醛浓度,并进一步通过恒压电催化将甲醛处理。该设计方案新颖、成本低廉、便于携带,具有较大实际应用价值。