Deep-ultraviolet(DUV) light-emitting devices(LEDs) have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-p...Deep-ultraviolet(DUV) light-emitting devices(LEDs) have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_(1-x)O and Be_xZn_(1-x)O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.展开更多
Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillat...Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.展开更多
Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stabl...Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.展开更多
We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an...We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.展开更多
Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase th...Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.展开更多
The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'- biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (A...The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'- biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq3) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.展开更多
The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated, with a newly synthesized blue conjugated polymer, poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dib...Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated, with a newly synthesized blue conjugated polymer, poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dibenziothiene-S,S- dioxide15)] (PPF-3,TSO15), chosen as host. High luminous efficiencies of 7.4 cd.A-1 and 27.4 cd.A-1 are achieved in red and green PLEDs, respectively, by optimizing the doping concentrations of red phosphorescent dye iridium bis(1- phenylisoquinoline) (acetylacetonate) (Ir(piq)) and green phosphorescent dye iridium tris(2-(4-tolyl)pyridinato-N, C2') (Ir(mppy)3).Furthermore, highly efficient white PLEDs (WPLEDs) with the Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.38) are successfully produced by carefully controlling the doping concentration of the irid- ium complex. The obtained WPLEDs show maximal efficiencies of 14.4 cd.A-1 and 10.1 lm.W-1, which are comparable to those of incandescent bulbs. Moreover, the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd.m-2 is stable, subject to constant applied current stress, indicating that good device stability can be obtained in this system.展开更多
A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trappi...A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.展开更多
This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance...This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.展开更多
Fluorescence/phosphorescence hybrid white organic light-emitting devices(WOLEDs) based on double emitting layers(EMLs) with high color stability are fabricated.The simplified EMLs consist of a non-doped blue therm...Fluorescence/phosphorescence hybrid white organic light-emitting devices(WOLEDs) based on double emitting layers(EMLs) with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence(TADF) layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone(DMAC-DPS) and an ultrathin non-doped yellow phosphorescence layer employing bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)((tbt)_2Ir(acac)).Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline(Bphen) and 1,3,5-tris(2-Nphenylbenzimidazolyl) benzene(TPBi) are selected as the electron transporting layer(ETL),and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l'Eclairage(CIE) coordinates variation of(0.017,0.009) at a luminance ranging from 52 cd/m^2 to 6998 cd/m^2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency(EQE),current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer(FRET)from DMAC-DPS to(tbt)_2Ir(acac) is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.展开更多
In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhanceme...In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni(30 nm)/MgF 2(62 nm)/ZnS(16 nm)/Ni(20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A(at 62.3 mA/cm 2) together with a very stable chromaticity.The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.展开更多
High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of...High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of multicolor devices consisting of N, N'-bis-(1-naphthyl)-N,N'diphenyl- 1,1'-biphenyl-4,4'- diamine (NPB) as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum (Alq3) as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.展开更多
Significantly enhanced electroluminescence performance and stability of all-inorganic perovskite light-emitting devices(PeLEDs) have been achieved by adding triton X-100 into the perovskite precursors.The small perovs...Significantly enhanced electroluminescence performance and stability of all-inorganic perovskite light-emitting devices(PeLEDs) have been achieved by adding triton X-100 into the perovskite precursors.The small perovskite grains arranged tightly and formed large grains as the triton X-100 were introduced.Thus the nonradiative defects originated from Pb atoms at the grain boundaries were highly passivated by triton X-100 and resulted in the promotion of PeLED performance,including a turn-on voltage of 3.2 V,a brightness of 63500 cd/m^(2),a current efficiency of 17.4 cd/A,and a prolonged lifetime of 2 h in air.展开更多
We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first...We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.展开更多
We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be ef...We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer(ETL) presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.展开更多
The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances ...The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency(IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells(QWs) enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.展开更多
AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory ...AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.展开更多
The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0...The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.展开更多
In this work, we report the preparation of a series of electroluminescent (EL) devices based on a high-performance polymer, poly(p-phenylene benzobisoxazole) (PBO), and their optoelectronic properties, which hav...In this work, we report the preparation of a series of electroluminescent (EL) devices based on a high-performance polymer, poly(p-phenylene benzobisoxazole) (PBO), and their optoelectronic properties, which have been rarely explored. The device structure is optimised using a complex cathode structure of tris-(8-hydoxyquinoline) aluminium (Alq3)/LiF/Al. By tuning the thickness of the Alq3 layer, we improve the device efficiency dramatically in an optimized condition. Further analysis reveals that the Alq3 layer in the complex cathode structure acts as a hole blocker in addition to its electron-injection role. A green light emission with a maximum brightness of 8.7×103 cd/m2 and a moderate current efficiency of 4.8 cd/A is obtained. These values are the highest ever reported for PBO devices. The high operational stability demonstrated by the present device makes it a promising tool for display and lighting applications. A new material is added to the selection of polymers used in this field up to now.展开更多
基金Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China(Grant No.61425021)the Natural Natural Science Foundation of China(Grant Nos.11374296,61376054,61475153,and 61604132)
文摘Deep-ultraviolet(DUV) light-emitting devices(LEDs) have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_(1-x)O and Be_xZn_(1-x)O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.
基金This work is supported by the National Natural Science Foundation of China(No.61904151)the National Key Research and Development Program of China(No.2021YFA1200803)the Joint Research Funds of the Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(No.2020GXLH-Z-020).
文摘Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.
基金supported by the National Basic Research Program of China(2012CB933703)the National High Technology Research and Development Program of China(2006AA03Z311)+1 种基金the National Natural Science Foundation of China(51172041,91233204 and 51372035)the Program for New Century Excellent Talents in University(NCET-11-0615)
文摘Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
基金the National Natural Science Foundation of China(Grant No.62104085)the Innovation/Entrepreneurship Program of Jiangsu Province,China(Grant No.JSSCTD202146)。
文摘We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.
基金supported by the National Natural Science Foundation of China(Grant Nos.61905086,62174067,62175085)Science and Technology Development Planning of Jilin Province(Project Nos.20190101024JH,20200201296JC)+1 种基金the Hong Kong Scholars Program(Project No.XJ2020028)grants from the Research Grants Council of the Hong Kong Special Administrative Region,China(Project Nos.11300418 and 11300419).
文摘Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046)the Tianjin Natural Science Foundation of China (Grant No. 10JCYBJC01100)
文摘The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'- biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq3) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.
基金Project supported by the National Basic Research Program of China (Grant No. 2009CB623602)the National Natural Science Foundation of China (Grant No. U0634003)
文摘Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated, with a newly synthesized blue conjugated polymer, poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dibenziothiene-S,S- dioxide15)] (PPF-3,TSO15), chosen as host. High luminous efficiencies of 7.4 cd.A-1 and 27.4 cd.A-1 are achieved in red and green PLEDs, respectively, by optimizing the doping concentrations of red phosphorescent dye iridium bis(1- phenylisoquinoline) (acetylacetonate) (Ir(piq)) and green phosphorescent dye iridium tris(2-(4-tolyl)pyridinato-N, C2') (Ir(mppy)3).Furthermore, highly efficient white PLEDs (WPLEDs) with the Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.38) are successfully produced by carefully controlling the doping concentration of the irid- ium complex. The obtained WPLEDs show maximal efficiencies of 14.4 cd.A-1 and 10.1 lm.W-1, which are comparable to those of incandescent bulbs. Moreover, the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd.m-2 is stable, subject to constant applied current stress, indicating that good device stability can be obtained in this system.
基金Project supported by Zhejiang Yangguang Cooperation Foundation, China (Grant No W050317)
文摘A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.
基金supported by the Natural Science Foundation of the Shanghai Committee of Science and Technology,China (GrantNo. 08JC1402300)
文摘This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61675041 and 61605253)the Foundation for Innovation Research Groups of the National Natural Science Foundation of China(Grant No.61421002)the Science&Technology Department Program of Sichuan Province,China(Grant No.2016HH0027)
文摘Fluorescence/phosphorescence hybrid white organic light-emitting devices(WOLEDs) based on double emitting layers(EMLs) with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence(TADF) layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone(DMAC-DPS) and an ultrathin non-doped yellow phosphorescence layer employing bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)((tbt)_2Ir(acac)).Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline(Bphen) and 1,3,5-tris(2-Nphenylbenzimidazolyl) benzene(TPBi) are selected as the electron transporting layer(ETL),and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l'Eclairage(CIE) coordinates variation of(0.017,0.009) at a luminance ranging from 52 cd/m^2 to 6998 cd/m^2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency(EQE),current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer(FRET)from DMAC-DPS to(tbt)_2Ir(acac) is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.
基金Project supported by the State Key Development Program for Basic Research of China (Grant No. 2009CB930600)the National Natural Science Foundation of China (Grant Nos. 60907047,61274065,60977024,21101095,20974046,21003076,51173081,and 61136003)+3 种基金the Specialized Research Foundation for the Doctoral Program of Higher Education,China (Grant No. 20093223120003)the Natural Science Foundation of Institutions of Higher Education of Jiangsu Province,China (Grant Nos. SJ209003,09KJB150009,10KJB510013,and TJ209035)the "Qing Lan" Program of Jiangsu Province,Chinathe Program of Nanjing University of Posts and Telecommunications,China (Grant Nos. NY210015,NY211069,and NY210040)
文摘In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni(30 nm)/MgF 2(62 nm)/ZnS(16 nm)/Ni(20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A(at 62.3 mA/cm 2) together with a very stable chromaticity.The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.
基金This was work supported in part by the National Nature Science Foundation oChina under Grant No. 60425101.
文摘High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of multicolor devices consisting of N, N'-bis-(1-naphthyl)-N,N'diphenyl- 1,1'-biphenyl-4,4'- diamine (NPB) as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum (Alq3) as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0305900 and 2016YFA0300404)the National Natural Science Foundation of China(Grant Nos.11874172,11374120,11634004,and 51320105007)the Science and Technology Innovative Research Project of Jilin University,China(Grant No.2017TD-01)。
文摘Significantly enhanced electroluminescence performance and stability of all-inorganic perovskite light-emitting devices(PeLEDs) have been achieved by adding triton X-100 into the perovskite precursors.The small perovskite grains arranged tightly and formed large grains as the triton X-100 were introduced.Thus the nonradiative defects originated from Pb atoms at the grain boundaries were highly passivated by triton X-100 and resulted in the promotion of PeLED performance,including a turn-on voltage of 3.2 V,a brightness of 63500 cd/m^(2),a current efficiency of 17.4 cd/A,and a prolonged lifetime of 2 h in air.
基金supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+2 种基金the Scientific Developing Foundation of Tianjin Education Commission,China(Grant No.2011ZD02)the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.
基金Project supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+1 种基金the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer(ETL) presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.
基金Project supported by the Special Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)the Major Scientific and Technological Projects of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province,China(Grant Nos.2014B010121001 and 2014B010119004)
文摘The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency(IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells(QWs) enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant Nos.2017B010127001 and 2015B010105011)+4 种基金the Education Department Project of Guangdong Province,China(Grant No.2017KZDXM022)the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)the Science and Technology Project of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Science and Technology Planning of Guangdong Province,China(Grant No.2015B010112002)
文摘AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant No.2017B010127001)+1 种基金the Science and Technology of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Education Department Funding of Guangdong Province,China(Grant No.2017KZDXM022)
文摘The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.
基金Project supported by the National Natural Science Foundation of China(Grant No.21174016)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120009110031)the 111 Project of China(Grant No.B08002)
文摘In this work, we report the preparation of a series of electroluminescent (EL) devices based on a high-performance polymer, poly(p-phenylene benzobisoxazole) (PBO), and their optoelectronic properties, which have been rarely explored. The device structure is optimised using a complex cathode structure of tris-(8-hydoxyquinoline) aluminium (Alq3)/LiF/Al. By tuning the thickness of the Alq3 layer, we improve the device efficiency dramatically in an optimized condition. Further analysis reveals that the Alq3 layer in the complex cathode structure acts as a hole blocker in addition to its electron-injection role. A green light emission with a maximum brightness of 8.7×103 cd/m2 and a moderate current efficiency of 4.8 cd/A is obtained. These values are the highest ever reported for PBO devices. The high operational stability demonstrated by the present device makes it a promising tool for display and lighting applications. A new material is added to the selection of polymers used in this field up to now.