V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studie...V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.展开更多
The V 2O 5 sol was fabricated by ultra fast quenching.The vanadium with low valence (V 4+ ) was found in V 2O 5 xerogel films by XPS analysis.The technology of oxygen top blown was applied to analyze the XPS...The V 2O 5 sol was fabricated by ultra fast quenching.The vanadium with low valence (V 4+ ) was found in V 2O 5 xerogel films by XPS analysis.The technology of oxygen top blown was applied to analyze the XPS spectrum difference of V 2O 5 xerogel when the powder of V 2O 5 was melting in air or in oxygen atmosphere.The results show that the different melting atmosphere has certain influences on the chemical valence of V 2O 5 xerogel.展开更多
基金[This work was financially supported by the National Natural Science Foundation of China (No.50402024)Natural Science Foundation of Gansu Province (No.ZS 041-A25-033).
文摘V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.
文摘The V 2O 5 sol was fabricated by ultra fast quenching.The vanadium with low valence (V 4+ ) was found in V 2O 5 xerogel films by XPS analysis.The technology of oxygen top blown was applied to analyze the XPS spectrum difference of V 2O 5 xerogel when the powder of V 2O 5 was melting in air or in oxygen atmosphere.The results show that the different melting atmosphere has certain influences on the chemical valence of V 2O 5 xerogel.
