The grain growth retardation mechanism and the effect of cooling rate on VC-doped WC–Co cemented carbides were investigated in this work.WC–30Co and WC–30Co–VC were prepared by powder metallurgy,liquid-phase sinte...The grain growth retardation mechanism and the effect of cooling rate on VC-doped WC–Co cemented carbides were investigated in this work.WC–30Co and WC–30Co–VC were prepared by powder metallurgy,liquid-phase sintering at 1400 ℃ and followed by water quenching（[150 ℃/s） or furnace cooling（＊0.083 ℃/s）.Based on the results of electron probe microanalysis（EPMA）,we found that WC concentration in the Co binder was independent of VC doping during liquid-phase sintering,hence barely contributing to the retardation of WC grain growth.In contrast,the（W,V）Cx phase formed at the WC/Co interfaces played a major role in retarding WC grain growth during liquid-phase sintering.The effect of cooling rate on the morphology of（W,V）Cxwas revealed by high-resolution transmission electron microscopy（HRTEM） and energy-dispersive spectroscopy（EDS）.In the water-quenched WC–30Co–VC,（W,V）Cxprecipitates were found as thin layers at the WC/Co interfaces.In contrast,both thin layers of similar thickness and nanoparticles of（W,V）Cx were observed in the furnace-cooled counterpart.These observations listed above suggested that thin（W,V）Cxlayers were stable structures effectively suppressing the growth of WC grains and their thickness remained independent of the cooling rate.The（W,V）Cxnanoparticles,however,may be inhibited through rapid cooling,ensuring the VC-doped WC–Co cemented carbides desired toughness.展开更多
基金financially supported by the National Development and Reform Commission of China(Grant No.20121743)the National Natural Science Foundation of China(Grant No.51474244)
文摘The grain growth retardation mechanism and the effect of cooling rate on VC-doped WC–Co cemented carbides were investigated in this work.WC–30Co and WC–30Co–VC were prepared by powder metallurgy,liquid-phase sintering at 1400 ℃ and followed by water quenching（[150 ℃/s） or furnace cooling（＊0.083 ℃/s）.Based on the results of electron probe microanalysis（EPMA）,we found that WC concentration in the Co binder was independent of VC doping during liquid-phase sintering,hence barely contributing to the retardation of WC grain growth.In contrast,the（W,V）Cx phase formed at the WC/Co interfaces played a major role in retarding WC grain growth during liquid-phase sintering.The effect of cooling rate on the morphology of（W,V）Cxwas revealed by high-resolution transmission electron microscopy（HRTEM） and energy-dispersive spectroscopy（EDS）.In the water-quenched WC–30Co–VC,（W,V）Cxprecipitates were found as thin layers at the WC/Co interfaces.In contrast,both thin layers of similar thickness and nanoparticles of（W,V）Cx were observed in the furnace-cooled counterpart.These observations listed above suggested that thin（W,V）Cxlayers were stable structures effectively suppressing the growth of WC grains and their thickness remained independent of the cooling rate.The（W,V）Cxnanoparticles,however,may be inhibited through rapid cooling,ensuring the VC-doped WC–Co cemented carbides desired toughness.
