A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diode...A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor(FET)structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-d B compression point of 38.5 d Bm at 1.9 GHz,an insertion loss of 0.27 d B/0.33 d B and an isolation of 35 d B/27 d B at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm^2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.展开更多
The design and implementation of a CMOS LC VCO with 3. 2-6. 1GHz tuning range are presented. This is achieved by enhancing the tuning capability of the binary-weighted band-switching MIM capacitor. The circuit has bee...The design and implementation of a CMOS LC VCO with 3. 2-6. 1GHz tuning range are presented. This is achieved by enhancing the tuning capability of the binary-weighted band-switching MIM capacitor. The circuit has been implemented in a 0. 18μm RF/Mixed-Signal CMOS process. The measured phase noise is - 101.67dBc/Hz at 1MHz offset from a 5.5GHz carrier,and the VCO core draws 9.69mA current from a 1.8V supply.展开更多
A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de...A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.展开更多
A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range （from 1. 8998 to 2. 2335GHz） through a combination of analog and digital tun...A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range （from 1. 8998 to 2. 2335GHz） through a combination of analog and digital tuning techniques （4-bit binary switch-capacitor array）. The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. lmA from a 1.8V power supply and works normally with a 1.5V power supply.展开更多
文摘A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor(FET)structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-d B compression point of 38.5 d Bm at 1.9 GHz,an insertion loss of 0.27 d B/0.33 d B and an isolation of 35 d B/27 d B at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm^2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.
文摘The design and implementation of a CMOS LC VCO with 3. 2-6. 1GHz tuning range are presented. This is achieved by enhancing the tuning capability of the binary-weighted band-switching MIM capacitor. The circuit has been implemented in a 0. 18μm RF/Mixed-Signal CMOS process. The measured phase noise is - 101.67dBc/Hz at 1MHz offset from a 5.5GHz carrier,and the VCO core draws 9.69mA current from a 1.8V supply.
文摘A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.
文摘A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range （from 1. 8998 to 2. 2335GHz） through a combination of analog and digital tuning techniques （4-bit binary switch-capacitor array）. The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. lmA from a 1.8V power supply and works normally with a 1.5V power supply.
