目前很多模数转换器(ADC)缺乏仿真模型,为了大型模数混合信号系统建模与仿真的需要,提出一种基于VHDL模拟混合信号扩展(VHDL Analog and Mixed-Signal Extensions,VHDL-AMS)的流水线ADC结构式建模方法.以多比特位每级的12位分辨率、10 M...目前很多模数转换器(ADC)缺乏仿真模型,为了大型模数混合信号系统建模与仿真的需要,提出一种基于VHDL模拟混合信号扩展(VHDL Analog and Mixed-Signal Extensions,VHDL-AMS)的流水线ADC结构式建模方法.以多比特位每级的12位分辨率、10 MSPS流水线ADC作为建模对象,根据流水线ADC的结构特征,在考虑非理想因素误差情况下,分别建立采样保持放大和乘法数模转换器的VHDL-AMS子模型,然后通过例化建立顶层流水线ADC的结构模型.通过SystemVision和Simulink联合仿真,得到静态性能参数微分非线性度和积分非线性度均小于1LSB,动态性能参数无杂散动态范围94.941 7dB,总谐波失真-94.941 9dB,信噪比58.754 4dB,验证了所提建模方法合的理与有效.展开更多
A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the p...A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the performance is specified. The operational amplifier model used for the TID radiation effect simulation is completed after verifying each modeled parameter. And a parameter for describing the external environment is introduced to make the model combined with TID. Finally, an example is used to illustrate the TID effect on the operational amplifier of MC14573, proving the validity of the model.展开更多
文摘目前很多模数转换器(ADC)缺乏仿真模型,为了大型模数混合信号系统建模与仿真的需要,提出一种基于VHDL模拟混合信号扩展(VHDL Analog and Mixed-Signal Extensions,VHDL-AMS)的流水线ADC结构式建模方法.以多比特位每级的12位分辨率、10 MSPS流水线ADC作为建模对象,根据流水线ADC的结构特征,在考虑非理想因素误差情况下,分别建立采样保持放大和乘法数模转换器的VHDL-AMS子模型,然后通过例化建立顶层流水线ADC的结构模型.通过SystemVision和Simulink联合仿真,得到静态性能参数微分非线性度和积分非线性度均小于1LSB,动态性能参数无杂散动态范围94.941 7dB,总谐波失真-94.941 9dB,信噪比58.754 4dB,验证了所提建模方法合的理与有效.
基金supported by the National Natural Science Foundation of China (No. 61303034)Aeronautical Science Foundation of China (No. 2013ZD31007)
文摘A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the performance is specified. The operational amplifier model used for the TID radiation effect simulation is completed after verifying each modeled parameter. And a parameter for describing the external environment is introduced to make the model combined with TID. Finally, an example is used to illustrate the TID effect on the operational amplifier of MC14573, proving the validity of the model.