Calibration of Hydrogen Peroxide Vapour Sensor

Hydrogen Peroxide vapour is becoming more popular to use as a method of decontamination, particularly for medical equipment and enclosures. It is highly effective in terms of microbiological kill rates and has a variety of uses in healthcare. Although it is environmentally acceptable as it spontaneously decomposes into water and oxygen, concentration of hydrogen peroxide in the air needs to be monitored and controlled. A method of calibrating hydrogen peroxide vapor sensors is described which is based on the concentration of hydrogen peroxide in saturated vapour over a solution in water at a defined temperature. The saturated vapour is generated by bubbling dry air into a solution of hydrogen peroxide at a defined concentration and temperature. A vapour at a concentration of 0.7 ppm was produced and used to successfully calibrate a hydrogen peroxide sensor.

Thermodynamic Study on Rare Earth Vapour Complex:EuAl_3Cl_（12）

Thermodynamic study was carried out on the reaction EuCl_(3(s))+(v/2)Al_2Cl_(6(g))= EuAl_vCl_((3v)+3(g))byquenching experiments within 6 3 8 ～ 7 6 2 K and 0 . 0 3 ～ 0 . 1 4 MPa . The results suggested that theEuAl_3Cl_(12(g)) complex was the predormnant species. The equilibrium constants of the reaction were measured. The reaction enthalpy and entropy derived from the measurements were and

Stable ^(85)Rb micro vapour cells:fabrication based on anodic bonding and application in chip-scale atomic clocks

We describe the microfabrication of ^85Rb vapour cells using a glass-silicon anodic bonding technique and in situ chemical reaction between rubidium chloride and barium azide to produce Rb. Under controlled conditions, the pure metallic Rb drops and buffer gases were obtained in the cells with a few mm^3 internal volumes during the cell sealing process. At an ambient temperature of 90 ℃ the optical absorption resonance of ^85Rb D1 transition with proper broadening and the corresponding coherent population trapping （CPT） resonance, with a signal contrast of 1.5% and linewidth of about 1.7 kHz, have been detected. The sealing quality and the stability of the cells have also been demonstrated experimentally by using the helium leaking detection and the after-9-month optoelectronics measurement which shows a similar CPT signal as its original status. In addition, the physics package of chip-scale atomic clock （CSAC） based on the cell was realized. The measured frequency stability of the physics package can reach to 2.1 × 10^-10 at one second when the cell was heated to 100 ℃ which proved that the cell has the quality to be used in portable and battery-operated devices.

Simulation of the Influences of the Pressure Ratio and Cu Vapour on SF_6 Arc Characteristics

The inlet and outlet pressure of the SF6 high voltage circuit-breaker nozzle are of importance in determining the thermal interruption capability of a breaker. Besides, electrode evaporation is inevitable during the arcing process, which may affect the SF6 arc behaviour significantly. In this study a numerical investigation on the arc characteristics of a supersonic nozzle is carried out, by considering the influence of the pressure ratio between the inlet and outlet, and the Cu vapour. It is demonstrated that a lower inlet pressure may result in a higher arc temperature, a lower arc voltage and a smaller mach number, and Cu vapour from electrode evaporation may cool the arc significantly.

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors （mHEMTs） grown on GaAs substrate by metal organic chemical vapour deposition （MOCVD） are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- ram. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6, Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

Effects of vapour bubbles on acoustic and temperature distributions of therapeutic ultrasound

This paper describes the evolution of vapour bubbles and its effect on nonlinear ultrasound propagation and temperature rise through tissues for therapeutic ultrasound. An acoustic-thermo coupling algorithm incorporating nonlinearity, diffraction, and temperature-dependent tissue properties, is employed to describe nonlinear ultrasound propagation and thermal effect. Results demonstrate that an obvious migration of peak pressure toward transducer surface is observed while the position of peak temperature changes little in liver tissue before the generation of vapour bubbles, and that the boiling region enlarges towards the surface of transducer in axial direction but increases slowly in radial direction after the generation of vapour bubbles.

Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy

Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2[） growth modes in metal-organic chemical vapour deposition （MOCVD）, provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation metbod （GVM）, developed based on the two strain states, is characterized by growth parameters＇ gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Net water vapour exchange over a mixed needle and broad-leaved forest in Changbai Mountain during autumn

Water vapour and CO2 fluxes were measured by the eddy-covariance technique above a mixed needle and broad-leaved forest with affiliated meteorological measurements in Changbai Mountain as part of China's FLUX projects since late August in 2002. Net water vapour exchange and environmental control over the forest were examined from September 1 to October 31 in 2002. To quantify the seasonal dynamics, the transition period was separated into leafed, leaf falling and leafless stages according to the development of leaf area. The results showed that (a) seasonal variation of water vapour exchange was mainly controlled by net radiation (Rn) which could account for 78.5%, 63.4% and 56.6% for leafed, leaf falling and leafless stages, respectively, while other environmental factors' effects varied evidently; (b) magnitude of water vapour flux decreased remarkably during autumn and daily mean of water vapour exchange was 24.2 mg m-2 s-1 (100%), 14.8 mg m-2 s-1 (61.2%) and 10.3 mg m-2 s-1 (42.6%) for leafed, leaf falling and leafless stage, respectively; and (c) the budget of water vapour exchange during autumn was estimated to be 87.1 kg H2O m-2, with a mean of 1427.2 g H2O d-1' varying markedly from 3104.0 to 227.5 g H2O m-2d-1.

Soil-water characteristics of Gaomiaozi bentonite by vapour equilibrium technique

Soil-water characteristics of Gaomiaozi(GMZ)Ca-bentonite at high suctions(3–287MPa)are measured by vapour equilibrium technique.The soil-water retention curve(SWRC)of samples with the same initial compaction states is obtained in drying and wetting process.At high suctions,the hysteresis behaviour is not obvious in relationship between water content and suction,while the opposite holds between degree of saturation and suction.The suction variation can change its water retention behaviour and void ratio.Moreover,changes of void ratio can bring about changes in degree of saturation.Therefore,the total change in degree of saturation includes changes caused by suction and that by void ratio.In the space of degree of saturation and suction,the SWRC at constant void ratio shifts to the direction of higher suctions with decreasing void ratio.However,the relationship between water content and suction is less affected by changes of void ratio.The degree of saturation decreases approximately linearly with increasing void ratio at a constant suction.Moreover,the slope of the line decreases with increasing suction and they show an approximately linear relationship in semi-logarithmical scale.From this linear relationship,the variation of degree of saturation caused by the change in void ratio can be obtained.Correspondingly,SWRC at a constant void ratio can be determined from SWRC at different void ratios.

CHEMICAL VAPOUR GROWTH OF CARBON WHISKERS ON CARBON FIBERS

The secondary reinforcement,crbon whiskers,may grow on the surface of parent rein- forcement,carbon fibres,by chemical vapour growth from acetylene using Fe salt as catalyzer.The optimal growing temperature is about 1000℃,and while the concentra- tion of catalytic solution is appropriate,the carbon whiskers may deposite uniformly and link each other on the parent carbon fibre surface.If the temperature or concentration is too high,the coarse clusters of carbon may deposite on the fibre surface.The mechanism of carbon whisker growth is believed that the carbon atoms in vapour phase dissolve in the Fe salt drops over fibres,then the solid carbon grains precipitate on the fibre surface.

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon （μc-Si：H） films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200℃ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88 nm/s is obtained by using a plasma excitation frequency of 75 MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H2 prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction μc-Si：H solar cells with 5.5% efficiency are fabricated.

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition （MPCVD） in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope （FESEM） and Raman spectroscopy. These nano^carbon films are possessed of good field emission （FE） characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim （F-N） model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current （SCLC） effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

The interaction of an atmospheric pressure plasma jet using argon or argon plus hydrogen peroxide vapour addition with bacillus subtilis

This paper reports that an atmospheric pressure dielectric barrier discharge plasma jet, which uses argon or argon ＋ hydrogen peroxide vapour as the working gas, is designed to sterilize the bacillus subtilis. Compared with the pure argon plasma, the bacterial inactivation efficacy has a significant improvement when hydrogen peroxide vapour is added into the plasma jet. In order to determine which factors play the main role in inactivation, several methods are used, such as determination of optical emission spectra, high temperature dry air treatment, protein leakage quantification, and scanning electron microscope. These results indicate that the possible inactivation mechanisms are the synergistic actions of chemically active species and charged species.

The near-infrared spectra and distribution of excited states of electrodeless discharge rubidium vapour lamps

The population ratio between the excited states of rubidium in the electrodeless discharge rubidium vapour lamp is calculated according to the near-infrared spectra in the region of 780-1550 nm. By using a 1529 nm laser, we measure the density of natural rubidium atoms at the 5P3/2 level. The populations of different excited states are then clarified.

Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition(CVD) Method

A procedure for purification of single walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition(CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

Synthesis of Nano-Crystalline Diamond Film in Hot Filament Chemical Vapour Deposition by Adding Ar

Nano-crystalline diamond films are successfully deposited on silicon substrates via the hot filament chemical vapour deposition process using a CH_(4)/H_(2)/Ar gas mixture.The as-grown films are analysed by using field emission scanning electron microscopy,micro-Raman spectroscopy and x-ray diffraction.These results show that the films consist of nano-diamond grains with sizes ranging from 10 to 100 nm,and argon is an important element in the formation of nano-crystalline diamonds.

Blue Light Emission from Hydrogenated Amorphous Silicon Carbide Prepared by Xylene Source in Plasma-Enhanced Chemical Vapour Deposition System

We chose xylene C_(8)H_(10) as carbon source instead of conventional methane CH_(4) to fabricate a-Si_(1-x)C_(x):H films using plasma-enhanced chemial vapour deposition method.The optical band gap of this material could be widened to 3.1eV.And the infrared absorption spectra of our films manifest the existence of aromatic ring in them.Strong blue light emission with a peak wavelength of 490nm has been observed at room temperature.

Evaluation of ocean tide loading effects on GPS-estimated precipitable water vapour in Turkey

Global Positioning System （GPS） has been widely used to estimate the total zenith tropo- spheric delay （ZTD） and precipitable water vapour （PWV） for weather prediction and at- mospheric research as a continuous and all-weather technique. However, estimations of ZTD and PWV are subject to effects of geophysical models with large uncertainties, particularly imprecise ocean tide models of inland seas in Turkey. In this paper, GPS data from Jan. 1, 2010 to Dec. 31, 2011 are processed using GAMIT/GLOBK at four co-located GPS stations （ISTN, ERZR, SAMN, and IZMI） with Radiosonde from the Turkish Met-Office together with several nearby IGS stations. Four widely used ocean tide models are adopted to evaluate their effects on GPS-estimated PWV, such as IERS recommended FES2004, NAO99b, CSR4.0 and GOT00. Five different strategies are taken without ocean tide model and with four ocean tide models, respectively, which are used to evaluate ocean tide models effects on GPS-estimated PWV through comparing with co-located Radiosonde. Results showed that ocean tide models have greatly affected the estimation of the pre- cipitable water vapour at stations near coasts. The ocean tide model FES2004 gave the best results when compared to Radiosonde with ＋2.12 mm in PWV at stations near coastline. While other ocean tides models agree each other at millimeter level in PWV. However, at inland GPS stations, ocean tide models have less effect on GPS-estimated PWV.