Influence of Bath Composition on Magnetic Properties of Electrodeposited Co-Pt-W Thin Films

Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited strong perpendicular magnetic anisotropy when the ratio of [-Co^2＋ ] to [-Pt^Ⅳ ] was 10 ; cathode current efficiency and perpendicular magnetic anisotropy showed little variations when [WO4^2- ] was lower than 0. 1 mol/L, but perpendicular magnetic anisotropy had strengthened when [WO4^2-] was over 0. 1 mol/L, which could be explained by the fact that the hydrogen evolution could produce pores as magnetic domain pinnings; citrate as complexing reagent can promote the polarization of [Co^2＋] and [Pt^Ⅳ]. As a result, the equilibrium electrode potentials of cobalt and platinum moved to negative direction, which led to the co-deposition of Co, Pt, and W. It was also found out that the as-deposited Co- Pt-W hard magnetic thin films were very homogeneous, smooth, and had the maximum coercivity for the bath pH 8. 5 and the concentration of citrate 0. 26 mol/L.

Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.

Photocatalytic degradation characteristic of amorphous TiO_2-W thin films deposited by magnetron sputtering

TiO2-W films were deposited on the slides by reactive magnetron sputtering. Properties of the films were analyzed via AFM, XRD, XPS, STS, UV-Vis and ellipse polarization apparatus. The results show that TiO2-W films are amorphous. The AFM map reveals that the surface of the film is tough and porous. The experiments of decomposing methylene blue indicate that the thickness threshold on these films is 141 nm, at which the rate of photodegradation is 90% in 2 h. And when the thickness is over 141 nm, the rate of photodegradation does not increase any more. This result is completely different from that of crystalloid TiO2 thin film.

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6.4 10 4 cm were obtained at a growth temperature of225 C and sputteringpower of 40 W, with carrier mobility of 33.0 cm 2 V 1 s 1 and carrier concentration of 2.8 10 20 cm 3 and the average transmittance of about 81% in near-infrared region and about 87% in visible region.

Effects of dopant content on optical and electrical properties of In_2O_3: W transparent conductive films

The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.

镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能

为研究W含量对Cu-W薄膜的结构与力学性能的影响,用磁控溅射工艺制备Cu-W薄膜,靶材为镶嵌组合型。薄膜的成份、结构、表面形貌分别选用能谱仪(EDS)、X射线衍射仪(XRD)和高分辨透射电镜(HRTEM)、扫描电镜(SEM)及原子力显微镜(AFM)进行表征。薄膜屈服强度σ_(0.2)和裂纹萌生临界应变ε_(c)、弹性模量E及显微硬度H分别用微小力测试系统和纳米压痕仪进行测试。结果表明,调整W靶的面积占比即可控制薄膜成分,当W靶的面积占比从5%增至25%时,Cu-W薄膜的W含量(原子分数)从2.30%逐渐提高到15.10%,且薄膜中存在fcc Cu(W)亚稳准固溶体。随W含量的增加,Cu-W薄膜的平均晶粒尺寸从28 nm逐渐减小至18 nm,准固溶度从1.30%(原子分数)W逐渐增至9.50%W,薄膜的表面光洁度提高。随W含量的增加,Cu-W薄膜的屈服强度σ_(0.2)和显微硬度H提高较为明显,弹性模量E稍有增加,而裂纹萌生临界应变ε_(c)则减小。Cu-15.10%W薄膜具有最小的平均晶粒尺寸和最高的表面光洁度,其屈服强度、硬度及弹性模量值最高(σ_(0.2)=0.86 GPa、H=6.1 GPa、E=123.5 GPa),裂纹萌生临界应变ε_(c)值为0.84%,综合力学性能最好。

组合靶共溅射沉积Cu-W复合薄膜的结构与性能

用嵌入组合型靶材,采用磁控共溅射方法,在单晶硅和聚酰亚胺衬底上制备Cu-W复合薄膜。分别运用能谱仪、X射线衍射仪、扫描电镜和原子力显微镜对Cu-W复合薄膜的成份、结构及表面形貌进行分析表征。选用微小力测试系统、纳米压痕仪及四探针仪分别测试复合薄膜的屈服强度σ_(0.2)和裂纹萌生临界应变ε_(c)、显微硬度H及电阻率ρ。结果表明:可通过调整组合型靶材环状溅射刻蚀区内W靶所占的面积比,有效地调控复合薄膜的W含量。随W靶的面积占比从6%增至30%,Cu-W复合薄膜的W含量从2.6 at.%增至16.9 at.%。W在Cu中的固溶度延展,复合膜内存在面心立方(fcc)Cu(W)亚稳固溶体,随复合膜中W含量增加,W在Cu中的固溶度从1.7 at.%W增至10 at.%W,复合膜的平均晶粒从32 nm减小至16 nm,表面光洁度提高。W含量增加时,复合膜的屈服强度σ_(0.2)、显微硬度H及电阻率ρ增加,而裂纹萌生临界应变ε_(c)减小。

磁控共溅射W-Cu复合薄膜的工艺优化及性能研究

采用磁控共溅射沉积工艺,结合正交试验方法制备W-Cu复合薄膜。用扫描电子显微镜(SEM)观察W-Cu复合薄膜表面形貌,能谱仪(EDS)分析复合薄膜成分。微小力测试系统、纳米压痕仪及四探针仪分别测试复合薄膜的屈服强度σ_(0.2)、裂纹萌生临界应变ε_(c)、显微硬度H及电阻率ρ。结果表明,靶功率密度PD、溅射气压P及靶基距D_(TS)这三个工艺参数影响W-Cu复合薄膜的成分、沉积率、微观结构及力学和电学性能。优化的工艺参数为:PD=10 W/cm^(2)、P=2 Pa、D_(TS)=150 mm。该工艺条件下制备的W-Cu复合薄膜中Cu含量为42.2%(原子分数),沉积率6.6 nm/min。其性能为σ_(0.2)=0.86 GPa,ε_(c)=0.62%,H=7.35 GPa,ρ=19.6μΩ·cm。该复合膜微观结构呈均质化特征,W和Cu组元分布均匀。

退火Cu-W薄膜组织结构与残余应力

以不同温度真空原位退火工艺为手段,促使制备在单晶Si(100)和Al2O3基底上的Cu-W薄膜发生相变。用X射线衍射(XRD)分析晶体取向,偏振相位移技术分析薄膜残余应力。结果表明,随退火温度变化,薄膜相变呈现连续变化,由初始的非晶态晶化,出现类W的亚稳态固溶体相,以及随退火温度的进一步增加,发生Spinodal分解,亚稳固溶体完全分解为W和Cu两相。薄膜发生相变时产生拉应力作用,而在晶粒生长阶段,拉应力释放。

非晶态TiO_2-W薄膜的光催化性能研究

采用磁控溅射技术在玻璃基片上制备了W掺杂的非晶态TiO2薄膜,用XRD、XPS和椭圆偏光测厚仪等对薄膜进行了微观分析.结果表明,TiO2-W薄膜为非晶态结构.Ti以+4价存在;W以0价和+6价形式存在,并且6价和0价W的原子浓度比为6.4∶1;薄膜中Ti和W的原子浓度比为2.6∶1.对5mg·L-1的亚甲基蓝溶液光催化脱色试验表明,随着膜厚的增加,光催化降解率递增,当膜厚达到141nm时,所制备的TiO2-W薄膜对亚甲基蓝的脱色率在2h达到90%;当膜厚大于141nm时,光催化降解率不再增加.

Cu-W薄膜表面形貌各向异性与相结构

提出了一种基于离散小波变换和分形几何概念定量描述薄膜表面形貌各向异性的新方法,并据此研究了磁控溅射Cu-W薄膜表面结构特征随退火温度的演变.结果表明,薄膜表面聚合过程有两个不同阶段:孔洞处形核和颗粒生长;薄膜表面形貌分形维数可很好地描述表面粗化程度.研究发现,表面形貌各向异性变化趋势对相结构变化敏感.指出这种结合小波变换和分形几何概念表征薄膜表面形貌的方法,可以较灵敏地探测到Cu-W薄膜表面结构各向异性变化.

溅射沉积Cu-W合金薄膜的结构及力学性能

用磁控共溅射法制备Cu-W合金薄膜,运用EDX,XRD,TEM,SEM和纳米压痕仪对薄膜成分、结构和力学性能及其关系进行了研究。结果表明,含W较低的Cu82.1W17.9(%,原子分数)和W浓度较高的Cu39.8W60.2薄膜为晶态结构且出现固溶度扩展,分别存在fccCu(W)亚稳过饱和固溶体(固溶度4.8%W)和bccW(Cu)亚稳过饱和固溶体(固溶度5.7%Cu),W含量为31.8%,45.7%,54.8%的Cu-W薄膜呈非晶态,表面粗糙度较晶态Cu-W薄膜低。总体上非晶Cu-W薄膜弹性模量E和硬度H值较低,fccCu-W膜实测E值介于Voigt和Reuss规则预测值之间,bcc和非晶Cu-W膜实测E值分别高于和低于预测值;晶态Cu-W膜实测H值与Voigt规则计算值的符合性优于非晶膜,薄膜结构对力学性能预测可靠性影响较大。

磁控溅射沉积Cu-W薄膜的特征及热处理的影响

采用磁控共溅射法制备含钨1.51％～14．20％（原子分数，下同）的Cu-W合金薄膜，并用EDX、XRD、SEM、显微硬度仪和电阻仪研究了其成分、结构及性能。结果表明，添加W可显著细化Cu-W薄膜基体相晶粒，晶粒尺寸随W含量的增加而减小，Cu-W薄膜呈纳米晶结构。Cu-W薄膜中存在W在Cu中形成的fcc Cu（W）非平衡亚稳过饱和目溶体，固溶度随W含量的增加而提高，最大值为10．65％。与纯Cu膜对比发现，薄膜的显微硬度和电阻率总体上随W含量的增加而显著增大。经200℃、400℃及650℃热处理1h后，Cu—W薄膜基体相晶粒长大，EDX分析显示晶界处出现富W第二相；薄膜显微硬度降低，电阻率下降，降幅与退火温度呈正相关。添加W引起的晶粒细化效应以及退火中基体相晶粒度增大分别是Cu—W薄膜微观结构和性能形成及演变的主要原因。

W/TiO_2薄膜光催化性能的研究

用溶胶-凝胶法制备TiO2薄膜,然后对其按不同剂量进行了W+注入研究,以甲基橙为反应物检验了含有不同剂量W/TiO2薄膜在365 nm紫外光作用下的光催化降解效率.具有最佳光催化降解效率的是注量Φ(W+)=7×1016cm-2的W/TiO2薄膜,与未掺W+的TiO2薄膜相比,光催化效率没有出现显著的提高.

溅射压强对W掺杂ZnO薄膜结构及光学性能的影响

在不同溅射压强下,通过射频(RF)磁控溅射在石英玻璃衬底上沉积得到W掺杂ZnO薄膜(WZO)。对样品的结晶性能,表面形貌和光学性能进行测试分析,结果表明:在适当溅射压强下,薄膜具有良好的结晶性和光学性能。随着溅射压强的增加,薄膜的结晶性先变好后变差,晶粒尺寸先增大后减小,在1.0 Pa时薄膜的结晶性最好,且晶粒尺寸最大,约为32 nm;所有WZO薄膜样品的平均透光率超过80%;光致发光主要由本征发光和缺陷引起的蓝光发光组成,在1.0 Pa时薄膜还有明显的Zni缺陷,在1.2 Pa时薄膜有明显的Oi缺陷。

溅射气压对Li-W共掺杂ZnO薄膜性能的影响

通过RF磁控溅射在不同溅射气压环境中,在石英衬底上制备得到Li-W共掺杂Zn O薄膜(LWZO)。对样品进行X射线衍射(XRD)、扫描电镜(SEM)、透过率以及电阻率的测试。结果表明:适当溅射气压环境下,有助于提高LWZO薄膜的结晶质量;SEM结果显示随着溅射气压增加LWZO薄膜表面晶粒粒径更小,表面更平整;薄膜的透光率保持在85%左右。光致发光光谱表明:LWZO的光致发光由本征发光及缺陷发光组成,结晶度高以及择优取向好,本征发光强度强。同时,薄膜的最低电阻率也达到了6.9×10-3Ωcm。

W掺杂量对非晶态TiO_2:W薄膜光学带隙的影响

在不同的W靶溅射功率下,用反应磁控溅射法在载玻片上制备了TiO2:W薄膜,并对样品进行了XRD,STS和UV-V is分析.结果表明试样为非晶态;W靶溅射功率为30 W时,带隙为2.75eV;W靶溅射功率为100 W时,带隙为3.02 eV;W靶溅射功率为150 W时,带隙能为2.92 eV.STS分析结果表明,在样品的禁带中产生了新的能级,能级宽度为0.83 eV.

直流/射频反应磁控溅射法制备W掺杂VO_X薄膜的工艺和性能

用直流/射频反应磁控共溅射法分别在玻璃和单晶硅片基底上制备VOX薄膜和W掺杂VOX薄膜,经退火后,对薄膜进行电阻-温度特性、XRD、表面形貌等测试。结果表明:当溅射气压为1.5 Pa、氧氩比为0.8:25 sccm、V靶采用100 W直流电源、W靶10 W射频电源共溅射制备的W掺杂VOX薄膜,经Ar气氛中450℃退火2 h后,薄膜相变温度由未掺杂时的68℃降低到40℃左右。XRD衍射结果表明部分W原子进入了VOX晶格;另外单晶硅片上制备的VOX薄膜的电阻温度系数和电阻值均大于玻璃基片上制备的薄膜。

双靶磁控溅射制备掺W氧化钒薄膜的研究

用双靶磁控溅射制备了掺钨氧化钒薄膜。Ｘ射线电子谱（ＸＰＳ）对所沉积的薄膜进行了分析，发现掺Ｗ氧化钒薄膜的相结构比较复杂。通过特征峰标定了这些相。用面积灵敏度因子方法得到Ｗ掺杂量的结果。原子力显微镜给出了薄膜的表面形貌。其表面形貌特征随沉积条件的不同有一定的变化。

ZnO缓冲层对W掺杂VO_2薄膜光电性能的影响

用磁控溅射法在载玻片基底上分别制备W-VO2单层薄膜与ZnO/W-VO2双层薄膜,并在Ar气氛中进行退火。用X射线衍射仪、LCR测试仪、扫描电镜、紫外-可见分光光度计和红外光谱仪对薄膜样品的晶体结构、电阻-温度特性、表面形貌、可见光透过率和红外光透过率进行测试。结果表明:ZnO/W-VO2双层薄膜的相变温度降低至35℃,薄膜生长更加致密均匀,可见光透过率提高约23%,对红外光的屏蔽效果更优。