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Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO_3 buffer layer
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作者 樊建锋 程晓曼 +3 位作者 白潇 郑灵程 蒋晶 吴峰 《Journal of Semiconductors》 EI CAS CSCD 2014年第6期38-41,共4页
The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (AI) source/drain electrodes was fabricated. Compared with conventional OFET ... The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (AI) source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/(V.s) and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. 展开更多
关键词 organic field effect transistors contact resistance wo3 buffer layer
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SiO2阻挡层对电子束沉积法生长高迁移率IWO薄膜性能的影响 被引量:2
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作者 任世荣 陈新亮 +4 位作者 张存善 孙建 张晓丹 耿新华 赵颖 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第4期843-847,共5页
利用电子束沉积技术在玻璃衬底上制备了IWO(In2O3∶WO3)薄膜和SiO2缓冲层,并将SiO2缓冲层对IWO薄膜性能的影响作了探究。SiO2缓冲层在室温生长。SIMS测试表明:SiO2缓冲层能有效阻挡浮法玻璃中的杂质进入到IWO薄膜。实验获得的具有SiO2... 利用电子束沉积技术在玻璃衬底上制备了IWO(In2O3∶WO3)薄膜和SiO2缓冲层,并将SiO2缓冲层对IWO薄膜性能的影响作了探究。SiO2缓冲层在室温生长。SIMS测试表明:SiO2缓冲层能有效阻挡浮法玻璃中的杂质进入到IWO薄膜。实验获得的具有SiO2阻挡层的IWO薄膜的电子迁移率μ~54.5 cm.2V-.1s-1,电阻率ρ~5.86×10-4Ω.cm,电子载流子浓度n~1.95×1020 cm-3,400~1600 nm光谱区域内的平均透过率~76%。 展开更多
关键词 电子束沉积技术 SiO2阻挡层 IWO薄膜 高迁移率
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Enhanced photocatalytic degradation of methyl orange by CdS quantum dots sensitized platelike WO_3 photoelectrodes 被引量:2
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作者 文瑾 刘灿军 +2 位作者 杜勇 胡传跃 田修营 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第12期4551-4559,共9页
CdS quantum dots sensitized platelike WO_3 photoelectrodes were successfully synthesized by a facile hydrothermal method and a modified chemical bath deposition(CBD) technique.To further improve the stability of the p... CdS quantum dots sensitized platelike WO_3 photoelectrodes were successfully synthesized by a facile hydrothermal method and a modified chemical bath deposition(CBD) technique.To further improve the stability of the photoelectrodes in alkaline environment,the platelike WO_3 films were treated with TiCl_4 to form a nano-TiO_2 buffer layer on the WO_3 plate surface before loading CdSQDs.The resulting electrodes were characterized by using XRD,SEM,HR-TEM and UV-vis spectrum.The photocatalytic activity of the resulting electrodes was investigated by degradation of methyl orange(MO) in aqueous solution.The photoelectrochemical(PEC) property of the resulting electrodes was also characterized by the linear sweep voltammetry.The results of both the degradation of MO and photocurrent tests indicated that the as-prepared CdSQDs sensitized WO_3 platelike photoelectrodes exhibit a significant improvement in photocatalytic degradation and PEC activity under visible light irradiation,compared with unsupported CdSQDs electrodes.Significantly,coating the WO_3 plates with nano-TiO_2 obviously facilitate the charge separation and retards the charge-pair recombination,and results in a highest activity for QDsCdS/TiO_2/WO_3 photoelectrodes. 展开更多
关键词 photocatalytic degradation cadmium sulfide platelike wo3 PHOTOELECTRODE Nano-TiO2 buffer layer
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WO3对Rubrene/C70有机太阳能电池性能的改善 被引量:2
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作者 吴明晓 田金鹏 +2 位作者 涂程威 谢伟广 刘彭义 《光电子.激光》 EI CAS CSCD 北大核心 2015年第1期63-67,共5页
研究了WO3对Rubrene/C70有机太阳能电池(OSCs)性能的改善,制备了结构为ITO/WO3/Rubrene/C70/BCP/Al的OSCs,其中WO3插入在ITO和Rubrene中间作为阳极修饰层。通过优化WO3的厚度,研究了WO3对OSCs性能的改善及其作用机理。实验发现,器件的... 研究了WO3对Rubrene/C70有机太阳能电池(OSCs)性能的改善,制备了结构为ITO/WO3/Rubrene/C70/BCP/Al的OSCs,其中WO3插入在ITO和Rubrene中间作为阳极修饰层。通过优化WO3的厚度,研究了WO3对OSCs性能的改善及其作用机理。实验发现,器件的短路电流Jsc、开路电压Voc、填充因子(FF)、光电转换效率(PCE)和串联电阻Rs等性能参数随WO3厚度的变化呈规律性变化;当WO3厚度小于80nm时,器件PCE随着厚度的增加不断增大;当WO3厚大于80nm时,器件PCE随着厚度的增加不断减小;当WO3厚度为80nm时,器件PCE达到最高为1.03%,相应的Jsc、Voc、FF分别为2.81mA·cm-2、0.83V、43.85%,Rs为45.3Ω·cm2,对比没有WO3修饰层,器件的Jsc、Voc、FF和PCE分别提高了31%、137%、17%和268%,Rs降低了33%。 展开更多
关键词 有机太阳能电池(OSCs) wo3 修饰层 RUBRENE C70
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