810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures

The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.

Optimization of Waveguide Structure for Tunable Optical Switch in Si/SiGe System

A new electro-optical device using Si/SiGe-system with two parallel ridge waveguides is proposed for optical switching and the optimization of the structure for a single mode operation is investigated.

Design and fabrication of a sub-millimeter multi-beam folded waveguide structure

A novel multi-beam folded waveguide(MBFW) circuit,which can enhance the output power and interaction efficiency of sub-terahertz(THz) traveling wave tube(TWT),is presented in the paper. Operating with fundamental mode and multiple electron beams means that a larger beam current can be used for a higher output power. The characteristics of the MBFW structure are analyzed and optimized. Compared with the single-beam folded waveguide(SBFW) TWT,the output power of the MBFW TWT increases from 3.64 W to 25.45 W at 140 GHz and its electronic efficiency increases from 1.06% to 7.4% under the conditions of an input peak power of 10 m W,a beam voltage of 9.55 k V and a current of 12 m A. The optimized MBFW structure can be successfully fabricated by micro milling,with dimension errors below expectation,and the measured transmission characteristics are in good agreement with the design.

Theoretical investigation of hierarchical sub-wavelength photonic structures fabricated using high-order waveguide-mode interference lithograph

This paper presents the theoretical investigation of hierarchical sub-wavelength photonic structures with various periods and numbers of layers, which were fabricated using a high-order waveguide-mode interference field. A 442-nm laser was used to excite high-order waveguide modes in an asymmetric metal-cladding dielectric waveguide structure. The dispersion curve of the waveguide modes was theoretically analyzed, and the distribution of the interference field of high-order waveguide modes was numerically simulated using the finite-element method. The various dependences of the characteristics of hierarchical sub-wavelength photonic structures on the thickness and refractive index of the photoresist and the waveguide mode were investigated in detail. These hierarchical sub-wavelength photonic structures have various periods and numbers of layers and can be fabricated by a simple and low-cost method.

Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of In Ga N insertion layer(In Ga N-IL)between the Ga N lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the In Ga N-IL in lower waveguide layers are found to be 300 nm and 4%,respectively.The thickness of In Ga N-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric Ga N waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of In Ga N-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.

Low Loss S-Bend Structure With Tapered Curved Waveguides

A novel S-bend with tapered curved waveguides is proposed. The normalized transmitted power is greater than the conventional bend with weakly guided waveguides. Small size and low loss can be reached by the proposed S-bend.

Enhanced sum-frequency generation from etchless lithium niobate empowered by dual quasi-bound states in the continuum

The miniaturization of nonlinear light sources is central to the integrated photonic platform,driving a quest for high-efficiency frequency generation and mixing at the nanoscale.In this quest,the high-quality(Q)resonant dielectric nanostructures hold great promise,as they enhance nonlinear effects through the resonantly local electromagnetic fields overlapping the chosen nonlinear materials.Here,we propose a method for the enhanced sum-frequency generation(SFG)from etcheless lithium niobate(LiNbO_(3))by utilizing the dual quasi-bound states in the continuum(quasi-BICs)in a one-dimensional resonant grating waveguide structure.Two high-Q guided mode resonances corresponding to the dual quasi-BICs are respectively excited by two near-infrared input beams,generating a strong visible SFG signal with a remarkably high conversion efficiency of 3.66×10^(-2)(five orders of magnitude higher than that of LiNbO_(3)films of the same thickness)and a small full-width at half-maximum less than 0.2 nm.The SFG efficiency can be tuned via adjusting the grating geometry parameter or choosing the input beam polarization combination.Furthermore,the generated SFG signal can be maintained at a fixed wavelength without the appreciable loss of efficiency by selectively exciting the angle-dependent quasi-BICs,even if the wavelengths of input beams are tuned within a broad spectral range.Our results provide a simple but robust paradigm of high-efficiency frequency conversion on an easy-fabricated platform,which may find applications in nonlinear light sources and quantum photonics.