A CMOS Voltage Reference Based on V_(GS) and ΔV_(GS) in the Weak Inversion Region

A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors （BJTs） are used. The proposed voltage reference uses a current-mode topology by summing a PTAT current and a CTAT current into a re- sistor to generate the required reference voltage. It can also provide more than one reference voltage output, which is quite suitable for systems requiring many different reference voltages simultaneously. The occupied chip area is 0. 023mm^-2 . The operation supply voltage is from 2.5 to 6V, and the maximum supply current is 8.25μA. The designed three different out- puts are respectively about 203mV, 1.0V, and 2.05V at room temperature when the supply voltage is 4V. The circuit achieves a temperature coefficient of 31ppm/℃ in the temperature range of 0 to 100℃ and an average line regulation of ± 0. 203%/V. The voltage reference has been successfully applied in a white LED backlight driver chip.

Characterizations of m-weak group inverses

To characterize m-weak group inverses,several algebraic methods are used,such as the use of idempotents,one-side principal ideals,and units.Consider an element a within a unitary ring that possesses Drazin invertibility and an involution.This paper begins by outlining the conditions necessary for the existence of the m-weak group inverse of a.Moreover,it explores the criteria under which a can be considered pseudo core invertible and weak group invertible.In the context of a weak proper*-ring,it is proved that a is weak group invertible if,and only if,a D can serve as the weak group inverse of au,where u represents a specially invertible element closely associated with a D.The paper also introduces a counterexample to illustrate that a D cannot universally serve as the pseudo core inverse of another element.This distinction underscores the nuanced differences between pseudo core inverses and weak group inverses.Ultimately,the discussion expands to include the commuting properties of weak group inverses,extending these considerations to m-weak group inverses.Several new conditions on commuting properties of generalized inverses are given.These results show that pseudo core inverses,weak group inverses,and m-weak group inverses are not only closely linked but also have significant differences that set them apart.

A New CMOS Current Reference with High Order Temperature Compensation

A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 Izm standard CMOS technology, gives a good temperature coefficient of 31ppm/℃ [-50-100℃] at a 1.8V supply, and also achieves line regulation of 0.01%/V and-120dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and Line regulation.

Weighted weak group inverse for Hilbert space operators

We present the weighted weak group inverse,which is a new generalized inverse of operators between two Hilbert spaces,and we extend the notation of the weighted weak group inverse for rectangular matrices.Some characterizations and representations of the weighted weak group inverse are investigated.We also apply these results to define and study the weak group inverse for a Hilbert space operator.Using the weak group inverse,we define and characterize various binary relations.

A Construction of Weakly Inverse Semigroups

Let S° be an inverse semigroup with semilattice biordered set E° of idempotents and E a weakly inverse biordered set with a subsemilattice Ep = { e ∈ E ｜ arbieary f ∈ E, S（f , e） loheain in w（e）} isomorphic to E° by θ：Ep→E°. In this paper, it is proved that if arbieary f, g ∈E, f ←→ g→→ f°θD^s° g°θand there exists a mapping φ from Ep into the symmetric weakly inverse semigroup P J（E∪ S°） satisfying six appropriate conditions, then a weakly inverse semigroup ∑ can be constructed in P J（S°）, called the weakly inverse hull of a weakly inverse system （S°, E, θ, φ） with I（∑） ≌ S°, E（∑） ∽- E. Conversely, every weakly inverse semigroup can be constructed in this way. Furthermore, a sufficient and necessary condition for two weakly inverse hulls to be isomorphic is also given.

Self-injective rings and linear (weak) inverses of linear finite automata over rings

LetR be a finite commutative ring with identity and τ be a nonnegative integer. In studying linear finite automata, one of the basic problems is how to characterize the class of rings which have the property that every (weakly) invertible linear finite automaton ? with delay τ over R has a linear finite automaton ?′ over R which is a (weak) inverse with delay τ of ?. The rings and linear finite automata are studied by means of modules and it is proved that *-rings are equivalent to self-injective rings, and the unsolved problem (for τ=0) is solved. Moreover, a further problem of how to characterize the class of rings which have the property that every invertible with delay τ linear finite automaton ? overR has a linear finite automaton ?′ over R which is an inverse with delay τ′ for some τ′?τ is studied and solved.

Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector

An ultra-low power complementary metal-oxide-semiconductor （CMOS） front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain （detector capacitance is 20 pF）. By operating this frontend readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel （3.0 V） Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.