White organic light-emitting diodes based on a combined electromer and monomer emission in doubly-doped polymers

We report on white organic light-emitting diodes （WOLEDs） based on polyvinylcarbazole （PVK） doped with 1,1-bis（（di-4-tolylamino）phenyl）cyclohexane （TAPC） and perylene, and investigate the luminescence mechanism of the devices. The chromaticity of light emission can be tuned by adjusting the concentration of the dopants. White light with the Commission Internationale de L＇Eclairage （CIE） coordinates of （0.33, 0.34） is achieved by mixing the yellow electromer emission of TAPC and the blue monomer emission of perylene from the device ITO/PVK： TAPC： perylene （100：9：1 in wt.） （100 nm）/tris-（8-hydroxyquinoline aluminum （Alq3） （10 nm）/A1. The device exhibits a maximal luminance of 3727 cd/m2 and a current efficiency of 2 cd/A.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

Highly efficient polymer phosphorescent light-emitting devices based on a new polyfluorene derivative as host

Several highly efficient iridium-complex polymer light-emitting devices （PLEDs） are fabricated, with a newly synthesized blue conjugated polymer, poly[（9,9-bis（4-（2-ethylhexyloxy）phenyl）-fluorene）-co-（3,7-dibenziothiene-S,S- dioxide15）] （PPF-3,TSO15）, chosen as host. High luminous efficiencies of 7.4 cd.A-1 and 27.4 cd.A-1 are achieved in red and green PLEDs, respectively, by optimizing the doping concentrations of red phosphorescent dye iridium bis（1- phenylisoquinoline） （acetylacetonate） （Ir（piq）） and green phosphorescent dye iridium tris（2-（4-tolyl）pyridinato-N, C2＇） （Ir（mppy）3）.Furthermore, highly efficient white PLEDs （WPLEDs） with the Commission Internationale de l＇Eclairage （CIE） coordinates of （0.35, 0.38） are successfully produced by carefully controlling the doping concentration of the irid- ium complex. The obtained WPLEDs show maximal efficiencies of 14.4 cd.A-1 and 10.1 lm.W-1, which are comparable to those of incandescent bulbs. Moreover, the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd.m-2 is stable, subject to constant applied current stress, indicating that good device stability can be obtained in this system.

Graded doped structure fabricated by vacuum spray method to improve the luminance of polymer light-emitting diodes

An increase in luminance of a polymer light-emitting diode(PLED) was obtained by fabricating a graded doping structure using a vacuum spray method. The small electron transport molecule, Tris(8-hydroxyquinolinato) aluminum(III)(Alq3), was graded dispersed along the film in the direction of growth in the hole transport polymer poly(3-hexylthiophene-2,5-diyl)(P3HT, regiorandom) layer of the PLED, despite being dissolved in the same organic solvent as the polymer. The PLED reported here, which is composed of a graded structure, emitted brighter light than PLEDs composed of pure polymer or of a blend of active layers prepared by spin coating and/or vacuum spray methods.

FLUORENE-BASED LIGHT-EMITTING POLYMERS

Several series of fluorene-based light-emitting polymers with the emphasis on achieving efficient and stable bluelight emission are reported. Spiro-functionalization may narrow the emission spectra (with smaller tail at Ionger wavelengths)of fluorene homopolymers to provide purer blue emission. The thermal spectral stability of the polymers could also beimproved because of the elevation of the glass transition temperature caused by the spiro-functionalization. However, theexcimer emission in fluorene homopolymers is not suppressed by the spiro-functionalization. Alternate copolymers of 9,9-dihexylfluorene and substituted phenylenes may emit efficient blue ligh both in solution and in film. The optical propertiesare dependent on the substituion on the phenylene ring. The alkoxy-substituted polymers displayed efficient PL and EL andgood thermal spectral stability. The HOMO and LUMO energy levels of the polymers based on the backbone structure couldbe tuned in a wide range by attaching different functional groups on the phenylene ring. By attaching europium(III) complexat the ends of the side chains in the alternate copolymers, we have demonstrated a new approach to achieving red emissionwith a very narrow spectrum. The copolymers of 9,9-dihexylfluorene and thiophene and bithiophene with differentsubstitutions were also synthesized to study the effect of substitution and regioregularity on the optical and other physicalproperties of the polymers.

Novel Blue Light-emitting PPV-based Copolymer Containing Triazole and Carbazole Units

A novel alternating conjugated copolymer containing triazole and carbazole units was synthesized by the Wittig reaction. The resulting bipolar conjugated polymer emits a pure light with good thermal stability, which is a promising candidate for polymer light emitting display.

Electrode Modifications for Polymer Light-Emitting Electrochemical Cells

The influence of different modification methods on the surface properties of indium-tin-oxide (ITO) electrodes were investigated by measurements of chemical composition,surface roughness,sheet resistance,contact angle and surface free energy.Experimental results demonstrate that oxygen plasma treatment more effectively optimizes the surface properties of ITO electrodes compared with the other treatments.Furthermore,the polymer light-emitting electrochemical cells (PLECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized.It is found that oxygen plasma treatment on the ITO electrode enhances injection current,luminance and efficiency,thereby improves the device characteristics of the PLECs.

NOVEL RED LIGHT-EMITTING POLYMERS BASED ON 2,7-CARBAZOLE AND THIOPHENE DERIVATIVES

A series of conjugated copolymers derived from 9-ethylhexyl-2,7-carbazole(Cz)and 4,7-di(4-hexylthien-2-yl)- 2,1,3-benzothiadiazole(DHTBT)was synthesized by Suzuki polycondensation.The photo-and electro-luminescent properties of these polymers were investigated.Efficient energy transfer from the Cz segment to the DHTBT unit occurs even if the DHTBT content as low as 1 mol%.PL emission was red-shifted significantly from 645 nm to 700 nm with the increase in DHTBT content by 1-50 mol%.PL efficiencies decreased...

Hole-Buffer Material Derived from Pyrene, Schiff Base and Tris to Enhance Emission Efficiency of Polymer Light-Emitting Diodes

Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.

Solution Processable Material Derived from Aromatic Triazole, Azomethine and Tris: Preparation and Hole-Buffering Application in Polymer Light-Emitting Diodes

This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcore linked with three trihydroxy tert-butyl terminals via azomethine linkages. The TAZS forms ashomogeneous film deposited by spin-coating process. The HOMO and LUMO levels of TAZS are -5.23 eV and -2.40 eV, respectively, as estimated from cyclic voltammogram. The current density results of hole-only and electron-only devices confirm strong hole-buffering capability of TAZS layer. Multilayer PLEDs with different thickness of TAZS (ITO/PEDOT: PSS/TAZS (x nm)/SY/ETL/LiF/Al) have been successfully fabricated, using spin-coating process to deposit hole-injecting PEDOT: PSS, TAZS, and emissive SY layers. The PLED with 16 nm TAZS reveals the optimal device performance, with maximum luminance and maximum current efficiency of 19,046 cd/m2 and 4.08 cd/A, respectively, surpassing those without TAZS as HBL (8484 cd/m2, 2.13 cd/A). The hole-buffering characteristic of TAZS contributes greatly to improved charges’ recombination ratio and enhanced emission efficiency.

Heat Resistant Fluorenone-based Polyimines as Novel Light-emitting Polymers

Fluorenone-based polyamines, as novel light-emitting polymers, were synthesized by the condensation polymerization of 3,6-dibromo-9-fluorenone with different aromatic diamines by palladiumcatalyzed aryl amination reaction. The structures of the polymers were characterized by means of FT-IR, 1H NMR spectroscopy and elemental analysis. The experimental results show a good agreement with the proposed structures. TGA measurement exhibits that the polymers possess good thermal stabilities with high decomposition temperatures（T5 400 ℃）. Due to the photo-induced intramolecular charge-transfer（ICT） of fluorenone-based polyimines, these polymers show significantly strong photonic luminescence in N,Ndimethylacetamide.

Temperature effects on photoluminescence of YAG:Ce^(3+) phosphor and performance in white light-emitting diodes

The well crystalline YAG：Ce^3＋ phosphor was synthesized by sold-state method, and the temperature dependence of excitation and emission spectra of YAG：Ce^3＋ phosphor were investigated in the temperature range from room temperature to 573 K. With temperature increasing, it was noted that the emission intensity of as-repared phosphors decreased considerably more rapidly when pumped by 460 nm than by 340 nm. The temperature-intensity curves under different excitation wavelengths were obtained using an Arrhenius function, and the corresponding activation energies were also obtained respectively. Thus, the experimental phenomenon was discussed in terms of nonradiative decay rate. The effects of as-prepared phosphors on the performance of the white LED with changing temperature were also studied.

Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr_(3) quantum dots

All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.The device is called a PVOLED.It has a glass / ITO / CuPc / m-MTDATA ∶ V 2 O 5 / NPB / CBP ∶ FIrpic ∶ DCJTB / BPhen / LiF / Al / P3HT∶ PCBM / V 2 O 5 / Al structure.The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd / m 2,when the conversion efficiency of OPV is 2.3%.We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED.High efficiency(18.3 cd / A) and high contrast ratio(9.3) were obtained at the device operated at 2 500 cd / m 2 under an ambient illumination of 24 000 lx.Reasonable white light emission with Commission Internationale De L'Eclairage(CIE) color coordinates of(0.32,0.44) at 20 mA / cm 2 and slight color shift occurred in spite of a high current density of 50 mA / cm 2.The proposed PVOLED is highly promising for use in outdoors display applications.

Structure and luminescence of Ca_2Si_5N_8:Eu^(2+) phosphor for warm white light-emitting diodes

We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.

Monolithic semi-polar(1■01) InGaN/GaN near white light-emitting diodes on micro-striped Si(100) substrate

The epitaxial growth of novel GaN-based light-emitting diode(LED) on Si(100) substrate has proved challenging.Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si(100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells(MQWs) with different well widths are grown on semi-polar(1■01)planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK：Cz6F blends are studied. Single and double layer devices are fabri- cated by using PVK： Cz6F blends, and the device with the configuration of indium tin oxide （ITO）/PVK：Cz6F/ tris（8-hydroxyquinolinate）aluminium （Alq3）/LiF/A1 exhibits white light emission with Commission Internationale de l＇Eclairage chromaticity coordinates of （0.30, 0.33） and a brightness of 402 cd/m^2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK：Cz6F blend films.

Bright White Organic Light-emitting Device Based on 1,2,3,4,5,6-Hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene

Organic light-emitting devices（OLEDs） with the structure of indium-tin-oxide（ITO）/N,N＇-bis-（1-naphthyl）-N,N＇-diphenyl-（1,1＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline（BCP）/tris（8-hydroxyquinoline）aluminum（Alq3）/Mg：Ag or that of ITO/NPB/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2-yl）benzene（HKEthFLYPh）/Alq3/Mg：Ag were studied.White light emission was achieved with the two devices when the thicknesses of BCP and HKEthFLYPh were 1.5 nm（device B） and 5 nm（device Ⅱ）,respectively.The obvious difference was that the EL spectrum of device Ⅱ was not sensitive to the thickness of HKEthFLYPh compared to that of BCP layer.Moreover,the maximum luminance of device Ⅱ was about 1000 cd/m^2 higher than that of device B at a forward bias of 15 V,and it exhibited a maximum power efficiency of 1.0 lm/W at 5.5 V,which is nearly twice that of device B.The performance of device Ⅱ using a novel star-shaped hexafluorenylbenzene organic material was improved compared with that of BCP.

Regulating Charge and Exciton Distribution in High-Performance Hybrid White Organic Light-Emitting Diodes with n-Type Interlayer Switch

The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has been demonstrated to achieve a high efficiency, high color rendering index(CRI), and low voltage trade-off.The device exhibits a maximum total efficiency of 41.5 lm W^(-1), the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs(80–88) at practical luminances(C1000 cd m^(-2)) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V([1 cd m^(-2)), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs.