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Analysis of Effective Working Hours of Automatic Assembly Equipment for Aircraft Assembly Stations 被引量:1
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作者 ZHOU Xianxin XIN Bo +1 位作者 GONG Yadong LI Chen 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2020年第6期903-913,共11页
To improve the accuracy of capacity analysis and prediction for the aircraft assembly stations,an approach for calculating the effective working hour(EWH)of automatic assembly equipment is introduced by using the dyna... To improve the accuracy of capacity analysis and prediction for the aircraft assembly stations,an approach for calculating the effective working hour(EWH)of automatic assembly equipment is introduced by using the dynamic mixed Weibull distribution(DMWD)model.Firstly,according to the features of aircraft assembling,a DMWD model considering the dynamic reliability of multiple subsystems and their synthetic effects on the whole equipment is established.A typical automatic drilling&riveting machine is selected as the research object,and the dynamic weights of reliability of three subsystems are modeled and solved.Subsequently the unknown parameters of the DMWD model are estimated based on maximum likelihood estimation(MLE)and Newton-Raphson method.Finally,the EWH of an automatic station is defined and modeled by using the solved dynamic reliability function.Based on the experimental study on a real automatic drilling&riveting machine from a wing panel assembly station,it is shown that the proposed DMWD and EWH models could effectively calculate the equipment reliability with full consideration of its multiple subsystems.The DMWD model is more suitable for improving the solution precision of EWH than the traditional three-parameter Weibull distribution. 展开更多
关键词 automatic assembly equipment effective working hours(EWH) Weibull distribution RELIABILITY
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A Comparative Study of Performance Between Operators With Work Discontinuity and Without Work Discontinuity 被引量:1
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作者 Josefa Angelie D. Revilla Iris Ann G. Martinez 《Chinese Business Review》 2014年第5期290-300,共11页
In situations where discontinuity in operation occurs, specifically in a country where coontractualization has an increasing trend, the performance level of operators after the work break is of great interest. Existin... In situations where discontinuity in operation occurs, specifically in a country where coontractualization has an increasing trend, the performance level of operators after the work break is of great interest. Existing studies have found that the performance of an operator declines after her operation is completely stopped. However, when the operator performed other tasks (may it be similar or not from her previous task) during the work break, the performance after the work break seems to be affected at different level. Contractual and regular operators from a semiconductor and textile company were considered to replicate a discontinuous and continuous operation. The processing times of contractual workers before and after several months of work break were compared. Two types of work break were seen to have significant effect on an operator's performance after the work break, Type 1: 0% to 40% similarity from previous task and Type 2: 40% to 97% similarity from previous task. One can find that when 21% of tasks performed during the work break are similar to the operator's previous task, there would be no change in her performance upon returning. On the other hand, a 5% decline in performance was observed after work break type 1 and an 8.54% improvement after work break type 2. Also, a remission rate of 18% from end of stint 1 to start of stint 2 under work break type 1 was seen, while 8% for work break type 2. This may also be true to other industries. Thus, further study is suggested. 展开更多
关键词 performance of contractual operators effects of work break remission rate
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Chinese Citizens' Right To Work and Social Security Effectively Protected——An interview with Zheng Silin, minister of labor and social security
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作者 OUR STAFF REPORTERS 《The Journal of Human Rights》 2005年第1期2-7,共6页
Following is an interview by staff reporters of the Human Rights magazine with Zheng Silin, Chinese minister of labor and social security. The interview was meant in part to celebrate the tenth anniversary of the impl... Following is an interview by staff reporters of the Human Rights magazine with Zheng Silin, Chinese minister of labor and social security. The interview was meant in part to celebrate the tenth anniversary of the implementation of the Labor Law of the People's Republic of China that falls on January 1,2005. We are publishing this transcript with a view to providing our readers with information about how China has worked persistently to protect citizens' right to work and social security and the achievements it has made in this regard. We need to remind our readers of the fact that back in March 2004, the National People's Congress, China's highest legislature, approved a recommendation for revision of China's Constitution. In accordance with the recommendation, the Constitution had one more clause added: The state shall establish and improve a social security system commensurate to the level of the economic and social development. 展开更多
关键词 minister of labor and social security An interview with Zheng Silin Chinese Citizens Right To work and Social Security Effectively Protected Security work
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Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities 被引量:1
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作者 洪文婷 韩伟华 +2 位作者 吕奇峰 王昊 杨富华 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第10期443-447,共5页
The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effectiv... The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor(MOS) technology. 展开更多
关键词 interface state density Fermi-level pinning MIS structure effective work function
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Determination of Variables That Affect the Remission Rate of Sewing Operations in a Textile Company
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作者 Josefa Angelie Dilla Revilla Leianne Yusi Casupang +1 位作者 Iris Ann Galarosa Martinez Ma. Laami Dilla Revilla 《Chinese Business Review》 2015年第9期411-422,共12页
In operations management, the learning curve has been an effective tool in estimating operator performance. However, discontinuities in work disrupt the learning process and a phenomenon called remission or forgetting... In operations management, the learning curve has been an effective tool in estimating operator performance. However, discontinuities in work disrupt the learning process and a phenomenon called remission or forgetting occurs, resulting in increased time of performing the task upon resumption of work. The study aims to identify variables that significantly affect the remission rate of sewing operations in a manufacturing setting. Four variables--length of stint 1, percent Differenceat stint t, gender, and product family, were identified. Statistical analyses, such as paired t-test, correlation, regression, and analysis of variance (ANOVA) were conducted in order to observe the relationships between the dependent variable and independent variables. For the results of the first general regression, gender was found to be an insignificant variable in predicting remission rate, while product family, length of stint 1, and percent Differenceat stint I were statistically significant. Moreover, the final general regression, which excluded the insignificant gender variable and considered the (regrouped) product families, revealed that product family, length of stint 1, and percent Differenceat stint 1 were still statistically significant. Length of stint 1 had a moderately positive correlation with remission rate, while percent Differenceat stint i had a moderately negative correlation with remission rate. Also, percent Differenceat stint 1 was the largest contributor to the remission rate model. In terms of R2, the goodness-of-fit of the model is moderate. Finally, the model yielded an absolute error of 5.08%, indicating a high accuracy in predicting remission rate. 展开更多
关键词 remission rate learning remission model learning curve effects of work break continuous performance manufacturing
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The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks 被引量:1
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作者 马雪丽 杨红 +5 位作者 王文武 殷华湘 朱慧珑 赵超 陈大鹏 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 2014年第10期187-189,共3页
: We introduced a TaN/TiAl/top-TiN triple-layer to modulate the effective work function of a TiN-based metal gate stack by varying the TaN thickness and top-TiN technology process. The results show that a thinner TaN... : We introduced a TaN/TiAl/top-TiN triple-layer to modulate the effective work function of a TiN-based metal gate stack by varying the TaN thickness and top-TiN technology process. The results show that a thinner TaN and PVD-process top-TiN capping provide smaller effective work function (EWF), and a thicker TaN and ALD-process top-TiN capping provides a larger EWF; here, the EWF shifts are from 4.25 to 4.56 eV. A physical understanding of the dependence of the EWF on the top-TiN technology process and TaN thickness is proposed. Compared with PVD-TiN room temperature process, the ALD-TiN 400 ℃ process provides more thermal budget. It would also promote more Al atoms to diffuse into the top-TiN rather than the bottom-TiN. Meanwhile, the thicker TaN prevents the Al atoms diffusing into the bottom-TiN. These facts induce the EWF to increase. 展开更多
关键词 TAN ALD-TiN PVD-TiN effective work function
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Material properties and effective work function of reactive sputtered TaN gate electrodes
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作者 张满红 霍宗亮 +1 位作者 王琴 刘明 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第5期32-35,共4页
The resistivity, crystalline structure and effective work function (EWF) of reactive sputtered TaN has been investigated. As-deposited TaN films have an fcc structure. After post-metal annealing (PMA) at 900℃, th... The resistivity, crystalline structure and effective work function (EWF) of reactive sputtered TaN has been investigated. As-deposited TaN films have an fcc structure. After post-metal annealing (PMA) at 900℃, the TaN films deposited with a N2 flow rate greater than 6.5 sccm keep their fcc structure, while the films deposited with a N2 flow rate lower than 6.25 sccm exhibit a microstructure change. The flatband voltages of gate stacks with TaN films as gate electrodes on SiO2 and HfO2 are also measured. It is concluded that a dipole is formed at the dielectric-TaN interface and its contribution to the EWF of TaN changes with the Ta/N ratio in TaN, the underneath dielectric layer and the PMA conditions. 展开更多
关键词 metal gate thermal stability effective work function DIPOLE
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An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
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作者 马雪丽 杨红 +5 位作者 王文武 殷华湘 朱慧珑 赵超 陈大鹏 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 2014年第9期162-165,共4页
We evaluated the TiN/TaN/TiA1 triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. ... We evaluated the TiN/TaN/TiA1 triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and TaN. The thinner TiN and/or thinner in situ TaN capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ TaN capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and TaN thickness are proposed. The thicker TiN prevents the A1 diffusion then induces the EWF to shift to mid-gap. However, the TaN plays a different role in effective work function tuning from TiN, due to the Ta-O dipoles formed at the interface between the metal gate and the high-k layer. 展开更多
关键词 TAN TiA1 Ta-O dipole effective work function
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Device parameter optimization for sub-20nm node HK/MG-last bulk FinFETs 被引量:1
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作者 许淼 殷华湘 +19 位作者 朱慧珑 马小龙 徐唯佳 张永奎 赵治国 罗军 杨红 李春龙 孟令款 洪培真 项金娟 高建峰 徐强 熊文娟 王大海 李俊峰 赵超 陈大鹏 杨士宁 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 2015年第4期66-69,共4页
Sub-20 nm node bulk FinFET PMOS devices with an all-last high-k/metal gate (HK/MG) process are fabricated and the influence of a series of device parameters on the device scaling is investigated. The high and thin F... Sub-20 nm node bulk FinFET PMOS devices with an all-last high-k/metal gate (HK/MG) process are fabricated and the influence of a series of device parameters on the device scaling is investigated. The high and thin Fin structure with a tapered sidewall shows better performance than the normal Fin structure. The punch through stop layer (PTSL) and source drain extension (SDE) doping profiles are carefully optimized. The device without SDE annealing shows a larger drive current than that with SDE annealing due to better Si crystal regrowth in the amorphous Fin structure after source/drain implantation. The band-edged MG has a better short channel effect immunity, but the lower effective work function (EWF) MG shows a larger driveability. A tradeoff choice for different EWF MGs should be carefully designed for the device's scaling. 展开更多
关键词 bulk FinFET effective work function (EWF) extension thermal budget metal gate
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Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications
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作者 Nacereddine Lakhdar Brahim Lakehal 《Journal of Semiconductors》 EI CAS CSCD 2016年第4期39-43,共5页
We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave... We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate(TM) GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design. 展开更多
关键词 gate engineering GaAs MESFET cut-off frequency short channel effects(SCEs) work function modeling
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