Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ra...Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.展开更多
This paper reports how pyrite films were prepared by thermal sulfurization of magnetron sputtered iron films and characterized by X-ray absorption near edge structure spectra and X-ray photoelectron spectroscopy on a ...This paper reports how pyrite films were prepared by thermal sulfurization of magnetron sputtered iron films and characterized by X-ray absorption near edge structure spectra and X-ray photoelectron spectroscopy on a 4B9B beam line at the Beijing Synchrotron Radiation Facility. The band gap of the pyrite agrees well with the optical band gap obtained by a spectrophotometer. The octahedral symmetry of pyrite leads to the splitting of the d orbit into t2g and eg levels. The high spin and low spin states were analysed through the difference of electron exchange interaction and the orbital crystal field. Only when the crystal field splitting is higher than 1.5 eV, the two weak peaks above the white lines can appear, and this was approved by experiments in the present work.展开更多
TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray ...TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the Nls core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p3/2 line between TiN and TixAl1-xN th77pj in film was 0.7 eV.展开更多
As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties a...As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.展开更多
X-ray diffraction is used extensively to determine the residual stress in bulk or thin film materials on the as- sumptions that the material is composed of fine crystals with random orientation and the stress state is...X-ray diffraction is used extensively to determine the residual stress in bulk or thin film materials on the as- sumptions that the material is composed of fine crystals with random orientation and the stress state is biaxial and homogeneous through the x-ray penetrating region. The stress is calculated from the gradient of ε ～ sin^2 φ linear relation. But the method cannot be used in textured films due to nonlinear relation. In this paper, a novel method is proposed for measuring the multiaxial stresses in cubic films with any [hkl] fibre texture. As an example, a detailed analysis is given for measuring three-dimensional stresses in FCC films with [111] fibre texture.展开更多
Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried ...Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu<sub>2</sub>O<sub>3</sub> thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.展开更多
Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C fo...Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.展开更多
Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The sto...Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb<sub>2</sub>S<sub>3</sub> thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.展开更多
The computer evaluation of weld X-ray film is an attractive technique for weld seam NDT （ nondestructive testing）. To achieve this target, digitalization of film is the first step and automatic defect identification...The computer evaluation of weld X-ray film is an attractive technique for weld seam NDT （ nondestructive testing）. To achieve this target, digitalization of film is the first step and automatic defect identification is another key technique. In this paper, a weld X-ray film digitalizing system has been established with linear array CCD and highlight LED light source. Its space resolution can reach 0. 04 mm/pixel and scanning speed can reach 100 mm/s for an industrial film. The transfer function curves of the system have been measured and the results indicate that its image gray resolution can reach 88 G/D at 4. 5D, and its dynamic range can be wider than 2. OD. In order to facilitate the evaluation of large welded structure, a panoramic evaluation algorithm is developed also. The algorithm includes image matching, image fusion and panoramic evaluation of the long linked film image.展开更多
Significant advancement in thin-film cadmium telluride (CdTe) deposition techniques in recent years has made this material attractive for the development of low-cost large area detector. Here we evaluate the intrinsic...Significant advancement in thin-film cadmium telluride (CdTe) deposition techniques in recent years has made this material attractive for the development of low-cost large area detector. Here we evaluate the intrinsic performance of the detector for a range of energies relevant to diagnostic imaging applications, such as fluoroscopy. The input x-ray spectra for a set of tube potentials ranging from 70 to 140 kVp were computed with the tungsten anode spectral model using interpolating polynomials (TASMIP) based on the measured output of our diagnostic x-ray simulator. Frequency-dependent detector performance analysis was conducted through Monte Carlo simulations of energy deposition within the detector. Intrinsic modulation transfer functions (MTF), noise power spectra (NPS), and detective quantum efficiencies (DQE) were computed for a set of CdTe detectors of varying thickness, from 100 to 1000 μm. MTF behavior at higher frequencies was affected by thickness and input energy, NPS increased with film thickness and energy, and the resultant DQE(f) decreased with increasing the input energy, but increased with the thickness of the detector. We found that the optimal thickness of CdTe under diagnostic x-ray beam is in the range of 300 to 600 μm. Physical properties of CdTe, such as the high atomic number and density, used in direct detection configuration, together with the recently established thin-film manufacturing techniques makes this technology a promising photoconductor for large area diagnostic flat panel imaging.展开更多
Glancing Angle X-ray Diffraction (GAXRD) is introduced as a direct, non-destructive, surface-sensitive technique for analysis of thin films. The method was applied to polycrystalline thin films (namely, titanium oxide...Glancing Angle X-ray Diffraction (GAXRD) is introduced as a direct, non-destructive, surface-sensitive technique for analysis of thin films. The method was applied to polycrystalline thin films (namely, titanium oxide, zinc selenide, cadmium selenide and combinations thereof) obtained by electrochemical growth, in order to determine the composition of ultra-thin surface layers, to estimate film thickness, and perform depth profiling of multilayered heterostructures. The experimental data are treated on the basis of a simple absorption-diffraction model involving the glancing angle of X-ray incidence.展开更多
Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-r...Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm^2 to 12 J/cm^2, i.e., 50% increase, after the film has been irradiated by 2.2×10^(13)/cm^2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.展开更多
基金financially supported by the National Natural Science Foundation of China (Grant No.51802025)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2020JQ-384)。
文摘Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.
基金Project supported by the National Natural Science Foundation of China (Grant No 102750770)
文摘This paper reports how pyrite films were prepared by thermal sulfurization of magnetron sputtered iron films and characterized by X-ray absorption near edge structure spectra and X-ray photoelectron spectroscopy on a 4B9B beam line at the Beijing Synchrotron Radiation Facility. The band gap of the pyrite agrees well with the optical band gap obtained by a spectrophotometer. The octahedral symmetry of pyrite leads to the splitting of the d orbit into t2g and eg levels. The high spin and low spin states were analysed through the difference of electron exchange interaction and the orbital crystal field. Only when the crystal field splitting is higher than 1.5 eV, the two weak peaks above the white lines can appear, and this was approved by experiments in the present work.
基金This work was supported by the National Natural Science Foundation of China under grant No.10474074the Hubei Natural Science Foundation under grant No.2001ABB060.
文摘TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the Nls core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p3/2 line between TiN and TixAl1-xN th77pj in film was 0.7 eV.
文摘As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.
基金Project supported by the State Key Development Program for Basic Research of China （Grant No 2004CB619302）, and the National Natural Science Foundation of China （Grant No 50271038）.
文摘X-ray diffraction is used extensively to determine the residual stress in bulk or thin film materials on the as- sumptions that the material is composed of fine crystals with random orientation and the stress state is biaxial and homogeneous through the x-ray penetrating region. The stress is calculated from the gradient of ε ～ sin^2 φ linear relation. But the method cannot be used in textured films due to nonlinear relation. In this paper, a novel method is proposed for measuring the multiaxial stresses in cubic films with any [hkl] fibre texture. As an example, a detailed analysis is given for measuring three-dimensional stresses in FCC films with [111] fibre texture.
文摘Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu<sub>2</sub>O<sub>3</sub> thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.
文摘Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.
文摘Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb<sub>2</sub>S<sub>3</sub> thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.
文摘The computer evaluation of weld X-ray film is an attractive technique for weld seam NDT （ nondestructive testing）. To achieve this target, digitalization of film is the first step and automatic defect identification is another key technique. In this paper, a weld X-ray film digitalizing system has been established with linear array CCD and highlight LED light source. Its space resolution can reach 0. 04 mm/pixel and scanning speed can reach 100 mm/s for an industrial film. The transfer function curves of the system have been measured and the results indicate that its image gray resolution can reach 88 G/D at 4. 5D, and its dynamic range can be wider than 2. OD. In order to facilitate the evaluation of large welded structure, a panoramic evaluation algorithm is developed also. The algorithm includes image matching, image fusion and panoramic evaluation of the long linked film image.
文摘Significant advancement in thin-film cadmium telluride (CdTe) deposition techniques in recent years has made this material attractive for the development of low-cost large area detector. Here we evaluate the intrinsic performance of the detector for a range of energies relevant to diagnostic imaging applications, such as fluoroscopy. The input x-ray spectra for a set of tube potentials ranging from 70 to 140 kVp were computed with the tungsten anode spectral model using interpolating polynomials (TASMIP) based on the measured output of our diagnostic x-ray simulator. Frequency-dependent detector performance analysis was conducted through Monte Carlo simulations of energy deposition within the detector. Intrinsic modulation transfer functions (MTF), noise power spectra (NPS), and detective quantum efficiencies (DQE) were computed for a set of CdTe detectors of varying thickness, from 100 to 1000 μm. MTF behavior at higher frequencies was affected by thickness and input energy, NPS increased with film thickness and energy, and the resultant DQE(f) decreased with increasing the input energy, but increased with the thickness of the detector. We found that the optimal thickness of CdTe under diagnostic x-ray beam is in the range of 300 to 600 μm. Physical properties of CdTe, such as the high atomic number and density, used in direct detection configuration, together with the recently established thin-film manufacturing techniques makes this technology a promising photoconductor for large area diagnostic flat panel imaging.
文摘Glancing Angle X-ray Diffraction (GAXRD) is introduced as a direct, non-destructive, surface-sensitive technique for analysis of thin films. The method was applied to polycrystalline thin films (namely, titanium oxide, zinc selenide, cadmium selenide and combinations thereof) obtained by electrochemical growth, in order to determine the composition of ultra-thin surface layers, to estimate film thickness, and perform depth profiling of multilayered heterostructures. The experimental data are treated on the basis of a simple absorption-diffraction model involving the glancing angle of X-ray incidence.
基金Project supported by the National Natural Science Foundation of China(Grant No.11405085)the Jiangsu Provincial Natural Science Fund,China(Grant No.BK20130789)
文摘Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm^2 to 12 J/cm^2, i.e., 50% increase, after the film has been irradiated by 2.2×10^(13)/cm^2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.
