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Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off 被引量:3
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作者 王婷 郭霞 +2 位作者 方圆 刘斌 沈光地 《Chinese Optics Letters》 SCIE EI CAS CSCD 2006年第7期416-418,共3页
GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) techn... GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm^2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer. 展开更多
关键词 Atomic force microscopy BONDING energy dispersive spectroscopy Excimer lasers Fusion reactions Gallium nitride Metallorganic chemical vapor deposition PHOTOLUMINESCENCE SAPPHIRE Scanning electron microscopy Silicon Solid solutions SUBSTRATES Surfaces X ray spectrometers
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