We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） fil...We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） films become QSH insulators after being chemically functionalized by hydrogen （H） or halogen （C1 and Br） atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin-orbit coupling （SOC）. The energy gap increases linearly with the increase of the SOC strength λ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.展开更多
In this work,we study the effects of disorder on topological metals that support a pair of helical edge modes deeply embedded inside the gapless bulk states.Strikingly,we predict that a quantum spin Hall(QSH)phase can...In this work,we study the effects of disorder on topological metals that support a pair of helical edge modes deeply embedded inside the gapless bulk states.Strikingly,we predict that a quantum spin Hall(QSH)phase can be obtained from such topological metals without opening a global band gap.To be specific,disorder can lead to a pair of robust helical edge states which is protected by an emergent Z2 topological invariant,giving rise to a quantized conductance plateau in transport measurements.These results are instructive for solving puzzles in various transport experiments on QSH materials that are intrinsically metallic.This work also will inspire experimental realization of the QSH effect in disordered topological metals.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11474197,U1632272,and 11521404)
文摘We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） films become QSH insulators after being chemically functionalized by hydrogen （H） or halogen （C1 and Br） atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin-orbit coupling （SOC）. The energy gap increases linearly with the increase of the SOC strength λ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.
基金supported by the National Basic Research Program of China(Grant No.2015CB921102)the National Natural Science Foundation of China(Grant Nos.11534001,11822407,11704106,and 11974256)+3 种基金the Fundamental Research Funds for the Central Universitiesfunded by the Priority Academic Program Development of Jiangsu Higher Education InstitutionsNational Natural Science Foundation of China of Jiangsu province(Grant No.BK20190813)supported by the Chutian Scholars Program in Hubei Province。
文摘In this work,we study the effects of disorder on topological metals that support a pair of helical edge modes deeply embedded inside the gapless bulk states.Strikingly,we predict that a quantum spin Hall(QSH)phase can be obtained from such topological metals without opening a global band gap.To be specific,disorder can lead to a pair of robust helical edge states which is protected by an emergent Z2 topological invariant,giving rise to a quantized conductance plateau in transport measurements.These results are instructive for solving puzzles in various transport experiments on QSH materials that are intrinsically metallic.This work also will inspire experimental realization of the QSH effect in disordered topological metals.
