Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic...Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.展开更多
A fundamentally crucial suggestion to rectify the fits to the high-resolution X-ray photoemission spectroscopy(XPS)raw data for the S 2p core level published by Chen et al.(Nano Res.2023,16,10567-10572)is presented he...A fundamentally crucial suggestion to rectify the fits to the high-resolution X-ray photoemission spectroscopy(XPS)raw data for the S 2p core level published by Chen et al.(Nano Res.2023,16,10567-10572)is presented herein.展开更多
Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature depen...Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.展开更多
A passively Q-switched erbium-doped fiber(EDF) laser is proposed and demonstrated utilizing a zirconium disulfide(ZrS2)-based saturable absorber(SA). ZrS2 nanosheets are prepared, whose modulation depth,saturation int...A passively Q-switched erbium-doped fiber(EDF) laser is proposed and demonstrated utilizing a zirconium disulfide(ZrS2)-based saturable absorber(SA). ZrS2 nanosheets are prepared, whose modulation depth,saturation intensity, and nonsaturable absorbance are measured to be 14.7%, 0.34 MW/cm^2, and 17.4%, respectively. Then, a Q-switched EDF laser is implemented by the ZrS2-SA. The pulse repetition rate varies from 40.65 to 87.1 k Hz when the pump power changes from 55 to 345 mW. The shortest pulse width is 1.49 μs with pulse energy of 33.5 nJ. As far as we know, this is the shortest pulse width obtained by a ZrS2-SA so far.展开更多
基金supported by the National Key R&D Program of China (Grant No. 2017YFA0402901)the National Natural Science Foundation of China (Grant No. U2032153)+2 种基金the International Partnership Program (Grant No. 211134KYSB20190063)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB25000000)the USTC Research Funds of the Double First-Class Initiative (Grant No. YD2310002004)。
文摘Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.
基金funded by the Community of Madrid(CM)through Project MAD2D-CM.
文摘A fundamentally crucial suggestion to rectify the fits to the high-resolution X-ray photoemission spectroscopy(XPS)raw data for the S 2p core level published by Chen et al.(Nano Res.2023,16,10567-10572)is presented herein.
基金L. M. X. acknowledges support from National Natural Science Foundation of China （Nos. 21373066 and 11304052）, Beijing Nova programme （No. Z151100000315081） and Beijing Talents Fund （No. 2015000021223ZK17）. C. Z. C. acknowledges support from the Program for New Century Excellent Talents in University of China （No. NCET-07-0903）.
文摘Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.
基金supported by the National Natural Science Foundation of China (No. 11304184)partially supported by the National Natural Science Foundation of China (No. 11704226)the Natural Science Foundation of Shandong Province (No. ZR2017MA051)
文摘A passively Q-switched erbium-doped fiber(EDF) laser is proposed and demonstrated utilizing a zirconium disulfide(ZrS2)-based saturable absorber(SA). ZrS2 nanosheets are prepared, whose modulation depth,saturation intensity, and nonsaturable absorbance are measured to be 14.7%, 0.34 MW/cm^2, and 17.4%, respectively. Then, a Q-switched EDF laser is implemented by the ZrS2-SA. The pulse repetition rate varies from 40.65 to 87.1 k Hz when the pump power changes from 55 to 345 mW. The shortest pulse width is 1.49 μs with pulse energy of 33.5 nJ. As far as we know, this is the shortest pulse width obtained by a ZrS2-SA so far.
